公开(公告)号：JPH10291834A

公开(公告)日：1998-11-04

申请号：JP10165397

申请日：1997-04-18

Applicant: JSR CORP

Inventor： UDAGAWA TADAHIKO ,  OKAMOTO KENJI ,  KAMII HIDEYUKI ,  KUMANO KOJI

IPC: C03C8/16 ,  H01J9/02

Abstract: PROBLEM TO BE SOLVED: To obtain a transfer film having large film thickness and large surface area, excellent in the uniformity of film thickness, free from pin hole or crack, giving a dielectric layer excellent also in surface smoothness and capable of completely decomposing and removing a binder even by a low temp. firing by forming a film forming material layer containing a glass powder and the binder on a supporting film. SOLUTION: The film forming material layer 20, which contains the glass powder of a mixture preferably of 60-90 wt.% lead oxide, 5-20 wt.% boron oxide and 5-20 wt.% silicon oxide, and the binder containing preferably an acrylic resin (e.g. copolymer of butyl methacrylate and n-lauryl methacrylate) and has preferably 10-100 μfilm thickness, is formed on the supporting film 10 (e.g. polyethylene terephthalate) having preferably 15-100 μ film thickness. If necessary, an easily strippable covering film 30 is further provided on the surface of the film forming material layer 20.