公开(公告)号：JP2010114193A

公开(公告)日：2010-05-20

申请号：JP2008284216

申请日：2008-11-05

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： ITO JUNJI ,  GOTO HIROFUMI ,  MATSUKI YASUO

IPC: H05K3/18 ,  H05K3/00 ,  H05K3/26 ,  H05K3/40

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a printed circuit board in which adhesiveness is excellent between a seed layer and an inner wall of a wiring groove and via hole, with good yield in manufacture and high reliability. SOLUTION: The method of manufacturing a printed circuit board includes a step (a) for forming an interlayer insulating layer that covers a lower layer wiring pattern formed on a substrate, a step (b) for forming a via hole that reaches the lower layer wiring pattern in the interlayer insulating layer, a step (c) for forming a permanent resist layer on the interlayer insulating layer which is positioned above the via hole and includes an opening part that follows the shape of a required wiring pattern, a step (d) for forming a seed layer at least on the inner wall of the opening part and the via hole by heating a base material containing specific metal compound under a predetermined condition to cause the metal compound to evaporate, a step (e) for forming a conductor layer on the seed layer by filling a conductor into the via hole and the opening part, and a step (f) for polishing the conductor layer surface to be flat until the permanent resist layer is exposed, for the conductor filled in the opening part to be an independent wiring pattern. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 解决的问题：提供一种印刷电路板的制造方法，其中种子层和布线槽和通孔的内壁之间的粘合性优异，制造成本高，可靠性高。 解决方案：制造印刷电路板的方法包括用于形成覆盖形成在基板上的下层布线图案的层间绝缘层的步骤（a），用于形成到达 层间绝缘层中的下层布线图案，在层间绝缘层上形成永久性抗蚀剂层的步骤（c），其位于通孔的上方，并且具有跟随所需布线图案的形状的开口部，步骤 （d）通过在预定条件下加热含有特定金属化合物的基材以使金属化合物蒸发，至少在开口部分的内壁和通孔上形成种子层，形成步骤（e） 通过将导体填充到通孔和开口部中而在种子层上的导体层，以及用于将导体层表面平坦抛光直到永久抗蚀剂层露出的步骤（f），用于导体f 在开口部分作为独立的布线图案。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2008266119A

公开(公告)日：2008-11-06

申请号：JP2007253276

申请日：2007-09-28

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： IWAZAWA HARUO ,  MATSUKI YASUO ,  TAMAKI KENTARO

IPC: C01B33/12 ,  B05D7/24 ,  C08G77/12 ,  H01L21/316 ,  H01L21/76

Abstract: PROBLEM TO BE SOLVED: To provide a silicon dioxide precursor and a silicon dioxide precursor composition useful for forming a high purity silicon dioxide film containing no organic component. SOLUTION: The silicon dioxide precursor is a silicone resin that is represented by the rational formula (1) (H 2 SiO) n (HSiO 1.5 ) m (SiO 2 ) k , wherein each n, m and k represents a number, and when n+m+k=1, n is not less than 0.05, m is over 0 to 0.95 and k is from 0 to 0.2, and that is solid at 120°C. The silicon dioxide precursor composition contains the above silicone resin and an organic solvent. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 解决的问题：提供二氧化硅前体和用于形成不含有机成分的高纯度二氧化硅膜的二氧化硅前体组合物。 解决方案：二氧化硅前体是由合理的式（1）表示的有机硅树脂（H 2 SiO）（HSiO 1.5 < / SB>）其中每个n，m和k表示一个数，当n + m + k = 1，n不小于0.05，m大于0至0.95，k为0至0.2，在120℃为固体。 二氧化硅前体组合物含有上述有机硅树脂和有机溶剂。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2007284639A

公开(公告)日：2007-11-01

申请号：JP2006116614

申请日：2006-04-20

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： IWAZAWA HARUO ,  O DOUKAI ,  MATSUKI YASUO

IPC: C08G77/60 ,  C08J5/18

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a uniform phosphorus-doped conductive silicon film on a substrate under normal pressure by a coating method and provide a method for producing a higher order silane compound containing phosphorus atom for the film-forming method.
SOLUTION: The method for forming a higher order silane compound containing phosphorus atom comprises the irradiation of a solution containing a photopolymerizable silane compound and a phosphorus compound with light having wavelength of >400 nm. The method for forming a phosphorus-containing silicon film comprises the coating of a substrate with a solution containing the higher order silane compound containing phosphorus atom obtained by the above method and the heat-treatment of the coated substrate.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供一种在常压下通过涂布法在基板上形成均匀的磷掺杂导电硅膜的方法，并提供一种含有磷原子的高级硅烷化合物的方法， 成型方法。 解决方案：形成含有磷原子的高级硅烷化合物的方法包括用波长> 400nm的光照射含有光聚合性硅烷化合物和磷化合物的溶液。 形成含磷硅膜的方法包括用包含通过上述方法获得的含有磷原子的高级硅烷化合物的溶液和涂覆的基材的热处理来涂覆基材。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2006028317A

公开(公告)日：2006-02-02

申请号：JP2004208052

申请日：2004-07-15

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： KAWAGUCHI KAZUO ,  MATSUKI YASUO

IPC: C08L79/08 ,  C01B31/02 ,  C08K5/151 ,  C08K5/3415 ,  C08L27/12

Abstract: PROBLEM TO BE SOLVED: To provide a composition from which a porous carbon film having many small pores with uniform pore diameters can be easily formed; and to provide a method for forming the porous film having the many small pores with the uniform pore diameters by using the composition.
SOLUTION: The composition comprises (A) at least one kind of a polymer selected from a polyamic acid obtained by reacting a tetracarboxylic acid dianhydride with a diamine compound, and an imidized polymer obtained by cyclodehydration of the polyamic acid, (B) a fluorine atom-containing organic particles and (C) at least one kind of a medium selected from the group consisting of an N-alkyl-2-pyrrolidone, a lactone and a dialkylimidazolidinone. The method for forming the porous carbon film involves using the composition.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种可以容易地形成具有孔径均匀的小孔的多孔碳膜的组合物; 并且提供通过使用该组合物形成具有孔径均匀的许多小孔的多孔膜的方法。 （A）选自由四羧酸二酐与二胺化合物反应得到的聚酰胺酸中的至少一种聚合物和通过聚酰胺酸环化脱水得到的酰亚胺化聚合物，（B） 含氟原子的有机颗粒和（C）至少一种选自N-烷基-2-吡咯烷酮，内酯和二烷基咪唑烷酮的介质。 形成多孔碳膜的方法包括使用该组合物。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2005206925A

公开(公告)日：2005-08-04

申请号：JP2004017238

申请日：2004-01-26

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： YONEKURA ISAMU ,  YOKOYAMA YASUAKI ,  SAKAI TATSUYA ,  MATSUKI YASUO

IPC: C23C18/08 ,  C23C18/10 ,  C23C18/14 ,  C23C18/52 ,  H01L21/288

Abstract: PROBLEM TO BE SOLVED: To provide an electrically conductive stacked film easily and inexpensively usable for the wiring and electrode of many electronic devices, to provide a method of forming the same, and to provide wiring and an electrode obtained by using the same.
SOLUTION: The electrically conductive stacked film is obtained by stacking a metal aluminum film and an electrically conductive film comprising metal selected from the group consisting of molybdenum, tungsten and tantalum, and carbon. The electrode or wiring of an electronic device is obtained by using the same. In the method of forming an electrically conductive film, an organic metal complex of metal selected from the group consisting of molybdenum, tungsten and tantalum is applied to the surface of a substrate, next, heat treatment is performed to form an electrically conductive film, then, a complex of an amine compound and alane (aluminum hydride) is applied to the surface of the electrically conductive film, and next, heat and/optical treatment is performed to form a metal aluminum film.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：为了提供容易且廉价地用于许多电子器件的布线和电极的导电叠层膜，以提供其形成方法，并且提供布线和使用该导线的电极 。 解决方案：导电性叠层膜通过层叠金属铝膜和包含选自钼，钨和钽的金属和碳的金属的导电膜而获得。 通过使用电子装置的电极或布线来获得。 在形成导电膜的方法中，将选自钼，钨和钽的金属的有机金属络合物施加到基板的表面，接下来进行热处理以形成导电膜，然后 ，将胺化合物和丙烯（氢化铝）的配合物涂布在导电膜的表面，接着进行热处理和/光学处理，形成金属铝膜。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2005060814A

公开(公告)日：2005-03-10

申请号：JP2003318133

申请日：2003-09-10

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： SAKAI TATSUYA ,  OKADA SACHIKO ,  MATSUKI YASUO

IPC: C07C11/12 ,  C07C13/263 ,  C07C22/02 ,  C07C53/126 ,  C07F7/08 ,  C07F15/00 ,  C07F17/02 ,  C07F19/00 ,  C23C16/18 ,  H01L21/285

Abstract: PROBLEM TO BE SOLVED: To provide a ruthenium compound from which film-like metallic ruthenium of high quality can be obtained, and to provide a method of forming a metallic ruthenium film by a chemical vapor deposition method using the same.
SOLUTION: The ruthenium compound as a chemical vapor deposition material is, e.g. expressed by formula (1).
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供可以从其获得高质量的薄膜状金属钌的钌化合物，并提供通过使用该钌化合物的化学气相沉积法形成金属钌膜的方法。 作为化学气相沉积材料的钌化合物是例如。 由公式（1）表示。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2004218028A

公开(公告)日：2004-08-05

申请号：JP2003008933

申请日：2003-01-17

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： YOKOYAMA YASUAKI ,  MATSUKI YASUO

IPC: C03C17/10 ,  C03C17/36 ,  C23C18/08 ,  C23C18/12 ,  C23C18/14 ,  H01B5/14 ,  H01B13/00 ,  H01L31/04

CPC classification number: C23C18/08

Abstract: PROBLEM TO BE SOLVED: To provide a composition for easily forming a silicon-aluminum mixed film which requires a low production cost and no expensive vacuum device or high-frequency generator, a method for forming the silicon-aluminum mixed film using the composition and the silicon-aluminum mixed film formed through the method. SOLUTION: The composition for forming the silicon-aluminum mixed film contains a silicon compound and an aluminum compound. The silicon-aluminum mixed film is formed by forming a coating film of the composition and subsequently exposing it to heat and/or light. COPYRIGHT: (C)2004,JPO&NCIPI

公开(公告)号：JP2003313299A

公开(公告)日：2003-11-06

申请号：JP2002119961

申请日：2002-04-22

Applicant: Jsr Corp ,  Jsr株式会社 ,  Seiko Epson Corp ,  セイコーエプソン株式会社

Inventor： AOKI TAKASHI ,  FURUSAWA MASAHIRO ,  MATSUKI YASUO ,  IWAZAWA HARUO ,  TAKEUCHI YASUMASA

IPC: C01B33/029 ,  C01B33/04 ,  C08G77/60 ,  C09D183/16 ,  H01L21/208 ,  H01L21/368

CPC classification number: C08G77/60 ,  C01B33/04 ,  C09D183/16 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02628

Abstract: PROBLEM TO BE SOLVED: To obtain a higher order silane composition which contains a higher order silane compound having a larger molecular weight from the viewpoint of wettability, boiling point and safety upon its application onto a substrate, and especially can easily form a high-quality silicon film, and a process for forming the excellent silicon film using the composition.
SOLUTION: The higher order silane composition contains the higher order silane compound obtained by photopolymerizing a solution of a photopolymerizable silane compound or a photopolymerizable silane compound in a liquid state by exposing it to ultraviolet irradiation. In the process for forming the silicon film, the higher order silane composition is applied onto a substrate.
COPYRIGHT: (C)2004,JPO

Abstract translation: 待解决的问题：为了获得含有较高分子量的高级硅烷化合物的高级硅烷组合物，从润湿性，沸点和施加到基材上的安全性的观点来看，特别是可以容易地形成 高质量的硅膜，以及使用该组合物形成优异的硅膜的工艺。 解决方案：高级硅烷组合物含有通过将其暴露于紫外线照射而使液态的光聚合性硅烷化合物或可光聚合的硅烷化合物的溶液光聚合而获得的高级硅烷化合物。 在形成硅膜的过程中，将较高级的硅烷组合物施加到基底上。 版权所有（C）2004，JPO

公开(公告)号：JP2003119200A

公开(公告)日：2003-04-23

申请号：JP2001312972

申请日：2001-10-10

Applicant: JSR CORP

Inventor： YOKOYAMA YASUAKI ,  MATSUKI YASUO

IPC: C01B33/04 ,  C07B61/00 ,  C07C29/14 ,  C07C29/143 ,  C07C31/10 ,  C07C33/26 ,  C07F7/08

Abstract: PROBLEM TO BE SOLVED: To provide a method for safely and profitably producing the silane compound. SOLUTION: This method for producing the silane compound comprises performing the first reduction of a silicon halide compound with sodium borohydride and/or the reaction product of the sodium borohydride with an aluminum chloride, and simultaneously performing the second reduction of a compound to be reduced, such as a carboxylic acid, olefin, a diene, an aldehyde, a ketone, a nitrile, an epoxide, an ester, and an acid chloride, with a borane and/or a diborane by-produced on the first reduction.

公开(公告)号：JP2002338891A

公开(公告)日：2002-11-27

申请号：JP2001146724

申请日：2001-05-16

Applicant: JSR CORP

Inventor： YOKOYAMA YASUAKI ,  MATSUKI YASUO

IPC: B32B5/18 ,  C09D185/00 ,  H01L21/28 ,  H01L21/283 ,  H01L21/288

Abstract: PROBLEM TO BE SOLVED: To provide a composition and a method for forming wirings and electrodes with ease and at a low cost which can suitably be used in a number of electronic devices. SOLUTION: The aluminum film-forming composition comprises a compound to be represented by formula (1): R R R Al wherein R , R , and R are the same or different and each a hydrogen atom, a 1-12C alkyl group, an alkenyl group, an alkynyl group, a phenyl group or an aralkyl group) and a solvent. The method for forming an aluminum film comprises using the composition, and an aluminum film, a wiring, and an electrode are formed of the composition.