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公开(公告)号：JPH10223886A
公开(公告)日：1998-08-21
申请号：JP1947097
申请日：1997-01-31
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： SUGIURA YOSHIYUKI , HAGIWARA YOSUKE , KAMAKURA MASAARI
IPC: H01L29/78
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device by which withstand voltage between a drain and a source is not reduced even when a high-potential drain electrode is connected across a device separation area. SOLUTION: An n+ type drain area 5 is formed in the approximate center of a device forming area 4. A p type channel area 6 is formed in contact with a p+ type device separation area 3 and surrounding the n+ type drain area 5 except the lower part of a drain electrode 11 and the proximity. An n+ type source area 7 is formed in the device forming area 4 in such a way that it is included in the p type channel area 6 and the p+ type device separation area 3. A drain electrode 11 is divided into two and is arranged so that it becomes radial as it goes away from the n+ type drain area 5.
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公开(公告)号：JPH10163489A
公开(公告)日：1998-06-19
申请号：JP32039596
申请日：1996-11-29
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： TOMII KAZUYUKI , NAGAHAMA HIDEO , SUGIURA YOSHIYUKI , HAGIWARA YOSUKE , KAMAKURA MASAARI
IPC: H01L29/78 , H01L21/336
Abstract: PROBLEM TO BE SOLVED: To prevent the withstand voltage between a source and a drain from dropping, in the case of wiring the drain electrode at high potential astride an element isolating region. SOLUTION: An n -type drain region 5 is formed within an element formation area 4, and a p-type channel region 6 is formed excluding the section under the drain electrode 12 and its periphery, and an n -type source region 7 is so formed as to be included in the p-type channel region and the p -type element isolating region. A p -type impurity region 8 is formed in the element formation region between the channel region and the n -type drain region and under the drain electrode and in its vicinity, and an conductor layer 14 is formed so that the capacity may be coupled, within the insulating layer 11 on the impurity region. The conductor layer under the drain electrode and in its vicinity is arranged to come closer to the surface of the element formation region and become more distant from the drain electrode than the conductor layer at other place.
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公开(公告)号：JPH10163474A
公开(公告)日：1998-06-19
申请号：JP31978696
申请日：1996-11-29
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： KAMAKURA MASAARI , TOMII KAZUYUKI , SUGIURA YOSHIYUKI , NAGAHAMA HIDEO , HAGIWARA YOSUKE
IPC: H01L29/78
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device which can get high breakdown strength stably and its manufacture. SOLUTION: An n -type drain region 5 is made at roughly center of a device formation area 4, and a p -type body 6 and a p-type channel region 7 are so made as to surround the n -type drain region 5. Then, an n -type source region 8 is made such that it is involved in the p -type body 6 and the p-type channel region 7, and a p -type impurity region 9 is made in the device formation region 4 between the p-type channel region 7 and the n -type drain region 5, and a p -type impurity region 10 is made such that it is involved in the p -type impurity region 9. Then, a field plate 15 is made so that it may be electrically connected with the p -type impurity region 10 and that it may be extended in the direction of the n -type drain region 5.
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公开(公告)号：JPH09293885A
公开(公告)日：1997-11-11
申请号：JP10797896
申请日：1996-04-26
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： SUGIURA YOSHIYUKI , TOMII KAZUYUKI , NAGAHAMA HIDEO , HAGIWARA YOSUKE , KAMAKURA MASAARI
IPC: H01L21/316 , H01L21/329 , H01L29/06 , H01L29/861
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device which can easily form an electrode having capacitive coupling and can realize a high breakdown voltage, and also to provide a method for fabricating the semiconductor device. SOLUTION: An n-type single crystal silicon substrate 1 is subjected on its one major surface to ion implanting and thermal diffusing processes to form a p-type impurity diffusion region 1a and an n type high-concentration impurity diffusion region 1b, and then subjected to a local-oxidation-of-silicon(LOCOS) process with use of a silicon nitride film 3 as a mask. The silicon nitride film 3 and silicon oxide film formed by the LOCOS oxidation are removed to form a projection 1c. Subsequently, a silicon oxide film 5 and a polysilicon layer 6 are formed, and the polysilicon layer 6 formed on a top face of the projection 1c is etched and removed. Further, a silicon oxide film 8 is formed and then etched with use of the photoresist as a mask to form openings 9a to 9c therein. A metallic wiring material 10 is filled into the openings 9a to 9c to form a metallic wiring pattern.
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公开(公告)号：JP2003311694A
公开(公告)日：2003-11-05
申请号：JP2002126616
申请日：2002-04-26
Applicant: Matsushita Electric Works Ltd , 松下電工株式会社
Inventor： KAMAKURA MASAARI , TOMONARI SHIGEAKI , KAWADA HIROSHI , YOSHIDA HITOSHI , YOSHIDA KAZUJI , KAWAHITO KEIKO , SAITO KIMIAKI
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor microactuator capable of substantiating a strong actuator force without losing heat insulation and supporting strength.
SOLUTION: The semiconductor microactuator is equipped with: a frame 1 formed on a semiconductor substrate; a flexible area 21 protrudedly mounted on the inside of the frame 1 and displaced according to the temperature; a movable element 22 continuously disposed on one end of the flexible area 21 and is relatively displaced in the orthogonal direction of the opening surface of the frame 1; and a heat insulating area 3 provided at least between the flexible area 21 and the frame 1 and controls a heat conduction. The semiconductor microactuator is formed so that the coefficient of linear expansion of the heat insulating area 3 becomes lower towards the flexible area 21.
COPYRIGHT: (C)2004,JPOAbstract translation: 要解决的问题：提供能够证实强力的致动器力而不失去绝热和支撑强度的半导体微致动器。 解决方案：半导体微致动器配备有：形成在半导体衬底上的框架1; 突出地安装在框架1的内部并根据温度移位的柔性区域21; 可动元件22连续地设置在柔性区域21的一端，并且在框架1的开口表面的正交方向上相对移位; 以及设置在柔性区域21和框架1之间的绝热区域3，并且控制热传导。 半导体微致动器形成为使得绝热区域3的线膨胀系数朝向柔性区域21变小。（C）2004，JPO
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Patent Agency Ranking
公开(公告)号：JP2002160199A
公开(公告)日：2002-06-04
申请号：JP2000358620
申请日：2000-11-27
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： KAMAKURA MASAARI , YOSHIDA HITOSHI , YOSHIDA KAZUJI
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor microactuator high in rigidity at a heat insulation part and capable of reducing electric power consumption and its manufacturing method. SOLUTION: Grooves 14a, 14b for implanting polyimide resin 24 at a portion corresponding to the heat insulation parts 4a, 4b (g) to be formed later are formed on a main surface of a supporting base plate 1 by anisotropic etching (b). Then insulation layers 24a2, 24b2 (f) formed by a heat insulation forming process repeating predetermined times a basic process made of series of processes: application of the polyimide resin 24 → exposure → development →curing are made to be the heat insulation layers 4a, 4b. The predetermined times are set such that the heat insulation lavers 4a, 4b with a desired thickness are formed.
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公开(公告)号：JP2001153257A
公开(公告)日：2001-06-08
申请号：JP33355399
申请日：1999-11-25
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： TOYODA KENJI , KATAYAMA HIRONORI , SAITO KIMIAKI , FUJII KEIKO , TOMONARI SHIGEAKI , KAWADA HIROSHI , YOSHIDA HITOSHI , KAMAKURA MASAARI , YOSHIDA KAZUJI
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor micro-valve increasing a displacement amount of a flexible part. SOLUTION: This semiconductor micro-valve comprises a first substrate 1 having a seat part 12 formed with a through hole 10 for a fluid to flow in, a valve element 11 provided in a position corresponding to the seat part 12, a flexible part 3 consisting of a bimetal part 3a displaced with heat generation by electric action serving as a drive source, and a second substrate 2 connecting the valve element 11 through the flexible part 3, the second substrate 2 is formed with an outflow port 15 making a fluid, flowing in through a clearance 13 between the valve element 11 and the seat part 12 from the through hole 10, pass to the outside. The seat part 12 is formed in circular shape, by providing the through hole 10 in almost the center of a circle, a length of the seat part 12 extended in a direction of the flexible part 3 from the through hole 10 is almost equal to a length of the seat part 12 extended in a direction of the outflow port 15, a flow speed of the fluid passing through the clearance 13 to flow in a side of the flexible part 3 is almost equal to a flow speed of the fluid passing through the clearance 13 to flow in a side of the outflow port 15.
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公开(公告)号：JP2001150392A
公开(公告)日：2001-06-05
申请号：JP33355599
申请日：1999-11-25
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： SAITO KIMIAKI , KATAYAMA HIRONORI , TOYODA KENJI , FUJII KEIKO , TOMONARI SHIGEAKI , KAWADA HIROSHI , YOSHIDA HITOSHI , KAMAKURA MASAARI , YOSHIDA KAZUJI
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor micro-actuator capable of reducing the energy necessary for displacing a movable element. SOLUTION: A movable element 2 having a rectangular peripheral edge is mounted inside of a frame-like supporting base 1 displaceably in the thickness direction of the supporting base 1. The supporting base 1 and the movable element 2 are connected through an arm member 3 capable of displacing the movable element 2 by its thermal expansion and contraction. The arm member 3 has a flexible part 8 obtained by stacking a flexible layer 7 on a flexible layer 6, and the flexible part 8 is deflected by the heat generated in accompany with the energization to the flexible layer 7, whereby displacing the movable element 2. The arm member 3 is connected to two sides along the longitudinal direction of the movable element, and extended in parallel with a central line along the lateral direction of the movable element 2.
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公开(公告)号：JP2001141092A
公开(公告)日：2001-05-25
申请号：JP32434599
申请日：1999-11-15
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： TOYODA KENJI , KATAYAMA HIRONORI , SAITO KIMIAKI , FUJII KEIKO , TOMONARI SHIGEAKI , KAWADA HIROSHI , YOSHIDA HITOSHI , KAMAKURA MASAARI , YOSHIDA KAZUJI
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor microvalve capable of providing a large displacement amount of a beam per electric power. SOLUTION: A first substrate 10 has a valve port 12 piercingly provided in the direction of thickness in a central part thereof, and a valve seat 13 with which a valve element 23 provided on a second substrate 20 comes into contact and from which the valve element 23 leaves is provided and protrudes at a peripheral fringe of the valve port 12 on one face on the second substrate 20 side. The second substrate 20 is composed of a silicon substrate and is provided with the valve element 23 which is supported in a support part which is a peripheral part 21 of the second substrate 20 though a plurality of beams 22 and comes into contact with and leaves the valve set 13 in accordance with bending of the beams 22. Bimetal raw films 24 constituting a bimetal together with the beams 22 are laminated on the beams 22. A discharge hole 30 is provided at a portion where the fluid flowing in through the valve port 12 can be discharged without passing the vicinity of the beam 22 and a package 40 connected with the second substrate 20 is provided over whole periphery on an upper face of the support part 21 so as to cover the beams 22 and the valve element 23.
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公开(公告)号：JP2000266226A
公开(公告)日：2000-09-26
申请号：JP6920599
申请日：1999-03-15
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： KAMAKURA MASAARI , TOMONARI SHIGEAKI , YOSHIDA HITOSHI , KAWADA HIROSHI , FUJII KEIKO
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor microvalve capable of controlling a large flow rate with a small size. SOLUTION: In a first silicon substrate 10, a first communication hole 10a penetrating therethrough in a thickness direction is formed. A closing element 23 pivotally supported to a both end of a second silicon substrate 20 through a thin flexible portion and closely contacting with a center portion of one surface of the first silicon substrate 10 corresponding to a flexure of the flexible portion 22 is provided. In the second silicon substrate 20, a second communication hole 28 is provided communicating with a space 20b formed between the flexible portion 20 and the first silicon substrate 10 even in the contact state where the closing element 23 is contacted with one surface of the first silicon substrate 10. Space 20a formed between the flexible part 22 and the first silicon substrate 10 in a contact state of the closing element 23 to one surface of the first silicon substrate 10, is communicated with the first communication hole 10a provided on the first silicone substrate 10.
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