公开(公告)号：FR2837622A1

公开(公告)日：2003-09-26

申请号：FR0203442

申请日：2002-03-20

Applicant: MEMSCAP

Inventor： GIRARDIE LIONEL

IPC: C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H01L21/28 ,  H01L21/316 ,  H01L29/51 ,  H01L29/92 ,  H01G4/002

Abstract: A multilayer structure with strong relative permittivity is made up of a number of distinct layers each with a thickness of less than 500 Angstrom and made from a base of hafnium dioxide, zirconium dioxide and alumina. The hafnium dioxide, zirconium dioxide and alumina are formed from alloys with the formula HfxZrtAly)z and their stoichiometry varies from layer to layer. The structure is made up of at least five layers and at least one of the outer layers is made up of alumina. The layers are deposited by atomic layer deposition.

公开(公告)号：CA2421110A1

公开(公告)日：2003-09-20

申请号：CA2421110

申请日：2003-03-12

Applicant: MEMSCAP

Inventor： GIRARDIE LIONEL

IPC: H01G4/33 ,  C23C16/40 ,  C23C16/44 ,  H01L21/28 ,  H01L21/316 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/108 ,  H01L29/51 ,  H01L27/00 ,  H01L21/77

Abstract: Micro-composant électronique réalisé à partir d'un substrat, et intégrant u ne structure capacitive réalisée au-dessus d'un niveau de métallisation (3) présent dans le substrat (2), ladite structure capacitive comportant deux électrodes (4,7 ), caractérisé en ce que: - la première électrode (4) comporte une pluralité de lamelles métalliques (14,24,34) empilées les unes au-dessus des autres, et séparées les unes des autres par des tronçons (18,28) de moindre largeur réalisés à partir du même métal, - la seconde électrode (7) recouvre la première électrode (4) en comportant une pluralité de lamelles (31,32) intercalées entre les lamelles (14,24,34) de la première électrode (4).

公开(公告)号：FR2836597A1

公开(公告)日：2003-08-29

申请号：FR0202461

申请日：2002-02-27

Applicant: MEMSCAP

Inventor： GIRARDIE LIONEL

IPC: H01L27/04 ,  C23C16/40 ,  C23C16/44 ,  H01L21/28 ,  H01L21/316 ,  H01L21/822 ,  H01L29/51 ,  H01L29/92 ,  H01G4/002 ,  H01G4/33

Abstract: A multilayer structure with strong relative permittivity is made up of a number of distinct layers each with a thickness of less than 500 Angstrom and made from a base of hafnium dioxide, zirconium dioxide and alumina. The hafnium dioxide, zirconium dioxide and alumina are formed from alloys with the formula HfxZrtAly)z and their stoichiometry varies from layer to layer. The structure is made up of at least five layers and at least one of the outer layers is made up of alumina. The layers are deposited by atomic layer deposition.

公开(公告)号：FR2834242A1

公开(公告)日：2003-07-04

申请号：FR0205465

申请日：2002-04-30

Applicant: MEMSCAP

Inventor： GIRARDIE LIONEL

IPC: C23C14/08 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H01B3/12 ,  C01G27/00 ,  H01G4/20 ,  H01G4/33 ,  H01L21/28 ,  H01L21/316 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/108 ,  H01L29/51 ,  H01L29/78 ,  B32B33/00 ,  B32B9/00

Abstract: Multilayer structure used as a material having high permittivity comprises a number of layers each of thickness less than 500 Angstroms. Some of the layers are based on aluminum, hafnium and oxygen, notably hafnium dioxide (HfO2) and alumina (Al2O3). Preferably, these layers comprise mixed oxides of formula HfxAlyOz whose stoichiometry varies from one layer to another. Preferred Features: The thickness of each layer is 1-200 Angstrom , preferably 1-100 Angstrom , and most preferably 1-50 Angstrom . The structure comprises at least five layers. At least one of the external layers is alumina (Al2O3). Each layer is deposited by atomic layer deposition (ALD).

公开(公告)号：CA2415309A1

公开(公告)日：2003-06-30

申请号：CA2415309

申请日：2002-12-30

Applicant: MEMSCAP

Inventor： GIRARDIE LIONEL

IPC: H01G4/20 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H01G4/33 ,  H01L21/02 ,  H01L21/28 ,  H01L21/316 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/108 ,  H01L29/51 ,  H01L29/78 ,  B32B15/20 ,  B32B9/00

Abstract: Structure multi-couches, utilisée notamment en tant que matériau de forte permitivité relative, caractérisée en ce qu'elle comporte une pluralité de couches élémentaires superposées, d'une épaisseur inférieure chacune à 500 .ANG., parmi lesquelles figurent deux couches à base d'un alliage de dioxyde de titane (TiO 2) et pentoxyde de tantale Ta 2 O 5) séparées par une couche intercalaire d'un alliage à base au moins de dioxyde d'hafnium (HfO 2) et d'alumine (Al 2 O 3).

公开(公告)号：FR2836597B1

公开(公告)日：2005-03-04

申请号：FR0202461

申请日：2002-02-27

Applicant: MEMSCAP

Inventor： GIRARDIE LIONEL

IPC: H01L27/04 ,  C23C16/40 ,  C23C16/44 ,  H01L21/28 ,  H01L21/316 ,  H01L21/822 ,  H01L29/51 ,  H01L29/92 ,  H01G4/002 ,  H01G4/33

公开(公告)号：FR2835970B1

公开(公告)日：2005-02-25

申请号：FR0201618

申请日：2002-02-11

Applicant: MEMSCAP

Inventor： GIRARDIE LIONEL

IPC: C23C16/40 ,  C23C16/44 ,  H01L21/28 ,  H01L21/316 ,  H01L29/51 ,  H01L29/92 ,  H01G4/002 ,  H01G4/33

Abstract: Disclosed is an electronic micro component (1) made on the basis of a semi-conducting substrate (2), comprising a capacitive structure which is applied on top of a main plane (7) of the substrate. The capacitive structure is provided with two electrodes (20,33), each of which comprises a flat portion (11, 38) running parallel to the main plane (7) of the substrate and a plurality of walls (16-18,34-37) that run parallel to each other and perpendicular to the flat portion (11, 38), to which said walls are connected. The parallel walls of each electrode are arranged one (16-18) between the other (34-37).

公开(公告)号：FR2841042B1

公开(公告)日：2004-07-09

申请号：FR0207267

申请日：2002-06-13

Applicant: MEMSCAP

Inventor： GIRARDIE LIONEL

IPC: H01L21/02 ,  H01L27/08 ,  H01L49/00 ,  H01F17/00

公开(公告)号：FR2845200A1

公开(公告)日：2004-04-02

申请号：FR0211920

申请日：2002-09-26

Applicant: MEMSCAP

Inventor： GIRARDIE LIONEL

IPC: B81B3/00 ,  B81C1/00 ,  H01L21/02 ,  H01L21/22

Abstract: A process for manufacture of an electronic component consisting of a micro-electromechanical device comprises stages of preparation of layers on a substrate, metallic anchorage zones and etching of the upper layer with hydrofluoric acid. The preparation is carried out in stages: (a) establishment of two layers superposed on a base of silicon dioxide, both layers(lower and upper) having different formulations; (b) establishment of anchorage zones for metallic sections in the superposed layers; (c) one or more stages of preparation of metallic sections mechanically separated from the substrate; and (d) etching of the upper silicon dioxide layer by gaseous anhydrous hydrofluoric acid.

公开(公告)号：FR2842018A3

公开(公告)日：2004-01-09

申请号：FR0208253

申请日：2002-07-02

Applicant: MEMSCAP

Inventor： GIRARDIE LIONEL

IPC: H01F3/10 ,  H01F10/32 ,  H01F17/00 ,  H01L23/522 ,  H01F5/00 ,  H01F41/04 ,  H01L27/00

Abstract: A micro-component including an inductive element of the inductance or transformer type, comprises a metal solenoid winding, connected to some levels of metallization (2) at the heart of the micro-component substrate (1), and a magnetic core (35) at the center of the winding. The magnetic core is formed from a pile of successive elementary layers (26, 28, 30, 32) of strongly magnetically permeable material and electrically insulating elementary layers (25, 27, 29, 31, 33).