公开(公告)号：JP2003234413A

公开(公告)日：2003-08-22

申请号：JP2002346552

申请日：2002-11-28

Applicant: MEMSCAP

Inventor： GIRARDIE LIONEL ,  DAVID JEAN-BAPTISTE

IPC: H01F17/00 ,  H01F41/04 ,  H01L21/3205 ,  H01L21/822 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H01L27/04

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing an electronic component incorporated with a guidance micro component disposed on a substrate. SOLUTION: This component includes continuous layers (10, 10a) of a substance with a low relative dielectric constant, which are isolated by a hard mask layer (12) and lie on the upper surface of a substrate (1), a multiplicity of metallic bent portions (30-31) defined on the continuous layers (10, 10a) of a substance with a low relative dielectric constant, and a copper-diffused barrier layer (15) sandwiched between the metallic bent portions (30-31) and the layers of a substance with a low relative dielectric constant, which is disposed immediately under this layer. The substrate (1) is a semiconductor substrate, or a glass or quartz-type amorphous substrate for forming an integrated circuit. The substance with a low relative dielectric constant deposited on the substrate (1) is preferably benzocyclobutene. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2003234412A

公开(公告)日：2003-08-22

申请号：JP2002346551

申请日：2002-11-28

Applicant: MEMSCAP

Inventor： GIRARDIE LIONEL ,  DAVID JEAN-BAPTISTE

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/288 ,  H01L21/3205 ,  H01L21/822 ,  H01L23/12 ,  H01L23/15 ,  H01L23/52 ,  H01L23/522 ,  H01L27/04 ,  H01L27/08

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing an electronic component incorporated with a guidance micro component disposed on a substrate. SOLUTION: This component includes a layer (10) of a substance with a low relative dielectric constant formed on the upper surface of a substrate (1), a multiplicity of metallic bent portions (30-31) defined on the layer (10) of a substance with a low relative dielectric constant, and a copper-diffused barrier layer (15) sandwiched between the metallic bent portions (30-31) and the layer (10) of a substance with a low relative dielectric constant. The substrate (1) is a semiconductor substrate, or a glass or quartz-type amorphous substrate for forming an integrated circuit. The substance with a low relative dielectric constant deposited on the substrate (1) is preferably benzocyclobutene. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2003282727A

公开(公告)日：2003-10-03

申请号：JP2003051816

申请日：2003-02-27

Applicant: Memscap ,  メムスカップ

Inventor： GIRARDIE LIONEL

IPC: H01L27/04 ,  C23C16/40 ,  C23C16/44 ,  H01L21/28 ,  H01L21/316 ,  H01L21/822 ,  H01L29/51

CPC classification number: C23C16/40 ,  H01L21/28167 ,  H01L21/31604 ,  H01L29/511

Abstract: PROBLEM TO BE SOLVED: To provide a capacitive structure in which manufacturing is easy and which can be formed at a final visible metallized level of an electronic microcomponent having capacitance particularly per higher unit area than a normal value.
SOLUTION: The electronic microcomponent is assembled with the capacitive structure formed on the top of the final visible metallized level manufactured of a substrate and formed in the substrate. The structure has two electrodes, one of which includes an array of superposed fins deviated from each other with respect to a central essential part, and the other of which includes an array of two fins, each of which is alternately disposed with the fins of the first electrode, coupled by common walls, two of which are coupled with each other above the first electrode.
COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：提供一种电容结构，其制造容易并且可以形成在电子微元件的最终可见金属化水平上，该电子微元件的电容特别是比正常值高的单位面积。 解决方案：电子微组件与形成在基板上形成的最终可见金属层的顶部上形成的电容结构组装在一起。 该结构具有两个电极，其中一个电极包括相对于中心基本部分彼此偏离的叠置的阵列阵列，另一个电极包括两个翅片的阵列，每个翅片交替地布置有 第一电极通过公共壁耦合，其中两个在第一电极之上彼此耦合。 版权所有（C）2004，JPO

公开(公告)号：JP2003308735A

公开(公告)日：2003-10-31

申请号：JP2002378529

申请日：2002-12-26

Applicant: Memscap ,  メムスカップ

Inventor： GIRARDIE LIONEL

IPC: C01G27/00 ,  C23C14/08 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H01B3/12 ,  H01G4/20 ,  H01G4/33 ,  H01L21/28 ,  H01L21/316 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/108 ,  H01L29/51 ,  H01L29/78

CPC classification number: H01L21/28185 ,  C23C16/40 ,  C23C16/45529 ,  C23C16/45531 ,  H01L21/28194 ,  H01L21/31604 ,  H01L29/513 ,  H01L29/517 ,  Y10T428/265

Abstract: PROBLEM TO BE SOLVED: To provide a material, which can be used in various capacitive structures, having high relative permittivity, high voltage proof property and low level of leakage current. SOLUTION: The multilayer structure comprises a plurality of separate layers such having a thickness less than 500 Å, wherein at least one of the layers is based on hafnium dioxide (HfO 2 ), zirconium dioxide (ZrO 2 ) or alumina (Al 2 O 3 ). COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：提供可用于各种电容结构的材料，具有高相对介电常数，高耐电压性和低漏电流。 解决方案：多层结构包括多个单独的层，其厚度小于500，其中至少一个层是基于二氧化铪（HfO 2 SB 2），二氧化锆（ ZrO 2 / SB 3）或氧化铝（Al 2 O 3 SB 3）。 版权所有（C）2004，JPO

公开(公告)号：JP2003303514A

公开(公告)日：2003-10-24

申请号：JP2002378530

申请日：2002-12-26

Applicant: Memscap ,  メムスカップ

Inventor： GIRARDIE LIONEL

IPC: C01G27/00 ,  C23C14/08 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H01B3/12 ,  H01G4/20 ,  H01G4/33 ,  H01L21/28 ,  H01L21/316 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/108 ,  H01L29/51 ,  H01L29/78

CPC classification number: H01L21/28194 ,  C23C16/40 ,  C23C16/45529 ,  C23C16/45531 ,  H01L21/31604 ,  H01L29/513 ,  H01L29/517 ,  Y10T428/24975

Abstract: PROBLEM TO BE SOLVED: To provide a material usable in various capacitive structures, with high relative permittivity values, high voltage resistance, and low level leak current. SOLUTION: This multilayer structure is constituted of a plurality of different layers, each has a thickness of less than 500 Å, and some layers of a plurality of layers are based on aluminum, hafnium, and oxygen. COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：提供可用于各种电容结构的材料，具有高相对介电常数值，高电压电阻和低电平漏电流。 解决方案：该多层结构由多个不同的层构成，每个层具有小于500埃的厚度，并且多个层的一些层基于铝，铪和氧。 版权所有（C）2004，JPO

公开(公告)号：JP2003243526A

公开(公告)日：2003-08-29

申请号：JP2002378532

申请日：2002-12-26

Applicant: MEMSCAP

Inventor： GIRARDIE LIONEL

IPC: H01L27/04 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H01L21/28 ,  H01L21/316 ,  H01L21/822 ,  H01L29/51

Abstract: PROBLEM TO BE SOLVED: To provide an electronic component having a micro-capacitor of a high capacitance value. SOLUTION: In an integrated circuit and the electronic component having a planar micro-capacitor integrated thereinto which are formed on a substrate (1), the capacitor is so formed on the uppermost surface of the metallization surface of the component that the metallization surface is formed into a first electrode (2) of the capacitor. Further, the capacitor has a first barrier layer (5) containing diffused oxygen which is deposited on the uppermost surface of the metallization surface (2); stacks (6) of a plurality of different oxide layers having their respective thicknesses not larger than 100 nm deposited on the uppermost portion of the first barrier layer (5); a second barrier layer (7) containing diffused oxygen which is deposited on the uppermost portion of the stack (6) of the oxide layer; and a metal electrode (20) present on the uppermost portion of the second barrier layer (7). COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2003309118A

公开(公告)日：2003-10-31

申请号：JP2002378528

申请日：2002-12-26

Applicant: Memscap ,  メムスカップ

Inventor： GIRARDIE LIONEL

IPC: H01G4/20 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H01G4/33 ,  H01L21/02 ,  H01L21/28 ,  H01L21/316 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/108 ,  H01L29/51 ,  H01L29/78

CPC classification number: H01L21/28194 ,  C23C16/40 ,  C23C16/45529 ,  C23C16/45531 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31683 ,  H01L28/40 ,  H01L29/513 ,  H01L29/517

Abstract: PROBLEM TO BE SOLVED: To provide a substance having high voltage resistance and a low-level leak current together with a high usable relative permittivity in various capacitive structures. SOLUTION: A multi-layer structure contains a plurality of laminated basic layers each having a thickness less than 500 angstrom (Å), two layers based on an alloy of titanium oxide (TiO 2 ) and tantalum pentaoxide (Ta 2 O 5 ) exist in the layers, and are separated by an intermediate layer wherein these layers base at least hafnium dioxide (HfO 2 ) and alumina (Al 2 O 3 ). COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：提供具有高电压电阻和低电平漏电流以及各种电容结构中可用的相对介电常数高的物质。 解决方案：多层结构包含多个厚度小于500埃的叠层基层，基于二氧化钛合金（TiO 2 ）和 五氧化二钽（Ta 2 5 SB）存在于这些层中，并被中间层分离，其中这些层至少基于二氧化铪（HfO 2 SB 2， SB>）和氧化铝（Al 2 3 ）。 版权所有（C）2004，JPO

公开(公告)号：JP2003303896A

公开(公告)日：2003-10-24

申请号：JP2003076543

申请日：2003-03-19

Applicant: Memscap ,  メムスカップ

Inventor： GIRARDIE LIONEL

IPC: H01G4/33 ,  C23C16/40 ,  C23C16/44 ,  H01L21/28 ,  H01L21/316 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/108 ,  H01L29/51

CPC classification number: C23C16/40 ,  H01L21/28167 ,  H01L21/31604 ,  H01L29/511

Abstract: PROBLEM TO BE SOLVED: To provide a capacitance structure which is formed on a final visible metallized level of an electronic component and has a capacitance value larger than a value which is usually observed.
SOLUTION: In the electronic microcomponent provided with a capacitance structure which is formed on a substrate and on the top of a metallized level existing in the substrate, the capacitance structure is provided with two electrodes. The first electrode is formed of a plurality of laminated metal lamellas which are isolated from each other by layers which are composed of the same metals and thinner than the lamellas. The second electrode overlaps with the first electrode by forming a plurality of lamellas which are sandwiched between the lamellas of the first electrode.
COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：提供在电子部件的最终可见金属化水平上形成的电容结构，其电容值大于通常观察到的值。 解决方案：在具有在基板上形成的电容结构和存在于基板中的金属化层的顶部的电子微元件中，电容结构设置有两个电极。 第一电极由多层叠金属薄片形成，层叠金属片由相同的金属构成并且比薄片薄的层隔开。 第二电极通过形成夹在第一电极的薄片之间的多个薄片与第一电极重叠。 版权所有（C）2004，JPO

公开(公告)号：JP2003234414A

公开(公告)日：2003-08-22

申请号：JP2002351667

申请日：2002-12-03

Applicant: MEMSCAP

Inventor： GIRARDIE LIONEL ,  DAVID JEAN-BAPTISTE

IPC: H01F17/00 ,  H01L21/02 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/822 ,  H01L23/52 ,  H01L27/04 ,  H01L27/08

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing an electronic component incorporated with a guidance micro component disposed on a substrate. SOLUTION: This component includes at least one laminate composed of a first layer (10) of a substance with a low relative dielectric constant, which is located on the upper surface of a substrate (1), and a hard mask layer, a multiplicity of metallic bent portions (39) formed on continuous layers (10, 10a) of a substance with a low relative dielectric constant, and a copper-diffused barrier layer (35), which exists on a low-lying surface and a side surface of the metallic bent portions (39). The substrate (1) is a semiconductor substrate, or a glass or quartz-type amorphous substrate for forming an integrated circuit. The substance with a low relative dielectric constant deposited on the substrate (1) is preferably benzocyclobutene. COPYRIGHT: (C)2003,JPO

公开(公告)号：FR2834242B1

公开(公告)日：2004-07-02

申请号：FR0205465

申请日：2002-04-30

Applicant: MEMSCAP ,  MEMSCAP

Inventor： GIRARDIE LIONEL

IPC: C23C14/08 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H01B3/12 ,  C01G27/00 ,  H01G4/20 ,  H01G4/33 ,  H01L21/28 ,  H01L21/316 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/108 ,  H01L29/51 ,  H01L29/78 ,  B32B33/00 ,  B32B9/00

Abstract: Multilayer structure used as a material having high permittivity comprises a number of layers each of thickness less than 500 Angstroms. Some of the layers are based on aluminum, hafnium and oxygen, notably hafnium dioxide (HfO2) and alumina (Al2O3). Preferably, these layers comprise mixed oxides of formula HfxAlyOz whose stoichiometry varies from one layer to another. Preferred Features: The thickness of each layer is 1-200 Angstrom , preferably 1-100 Angstrom , and most preferably 1-50 Angstrom . The structure comprises at least five layers. At least one of the external layers is alumina (Al2O3). Each layer is deposited by atomic layer deposition (ALD).