公开(公告)号：JP2001085534A

公开(公告)日：2001-03-30

申请号：JP25582999

申请日：1999-09-09

Applicant: NEC CORP

Inventor： NARITA KAORU

IPC: H01L21/332 ,  H01L21/822 ,  H01L21/8238 ,  H01L27/02 ,  H01L27/04 ,  H01L27/092 ,  H01L29/74

Abstract: PROBLEM TO BE SOLVED: To prevent breakdown of an inner circuit against a high speed electrostatic pulse and improve protection ability, by installing a structure wherein a distance between an anode and a cathode when a protection element is operated as a thyristor, and a distance between the anode and the cathode when the protective element is operated as a diode can be minimized simultaneously. SOLUTION: In a semiconductor protection device 300, a thyristor structure is formed by using a first diffusion layer 103, a second conductivity type well part 102, a first conductivity type well part 101 and a second diffusion layer 104. At the same time, a diode is formed between a third diffusion layer 105 and a fourth diffusion layer 106. A rectilinear distance Y between the first diffusion layer 103 and the second diffusion layer 104 in the thyristor structure is constituted as small as possible. Similarly, an interval X between the third diffusion later 105 and the fourth diffusion later 106 in a diode formed between the third diffusion later 105 and the fourth diffusion layer 106 is made as small as possible. As a result, protection ability can be improved when a high speed positive electrostatic pulse is applied.

公开(公告)号：JPH11150236A

公开(公告)日：1999-06-02

申请号：JP25899298

申请日：1998-09-11

Applicant: NEC CORP

Inventor： FUJII TAKEO ,  NARITA KAORU ,  HORIGUCHI YOKO

IPC: H01L27/04 ,  H01L21/822 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To prevent breakdown of the gate insulating film of an MIS transistor with the MIS transistor as a transfer gate. SOLUTION: A clamp element 20 is connected to a transfer gate 18 for preventing the gate insulating film of a the transfer gate 18 from being broken on a device electrification model test. As the clamp element 20, a bipolar transistor or a an MOS transistor with a thick gate insulating film may be used.

公开(公告)号：JPH10214940A

公开(公告)日：1998-08-11

申请号：JP1824697

申请日：1997-01-31

Applicant: NEC CORP

Inventor： NARITA KAORU

IPC: H01L27/04 ,  H01L21/822 ,  H01L21/8238 ,  H01L27/02 ,  H01L27/06 ,  H01L27/092

Abstract: PROBLEM TO BE SOLVED: To enhance electrostatic breakdown withstand voltage between a power terminal and a ground terminal without increasing a chip area. SOLUTION: When an electrostatic pulse of positive polarity is applied to Vdd1 terminal 202 , impedance of an internal circuit 11 to a Vss1 terminal 203 is generally low, but since it is clamped to a low voltage value of about 1.6V by two diodes (second electrostatic protective elements) 502 , 503 of a series forward direction between the terminals 203 and 202 , the electrostatic pulse applied to the terminal 202 is discharged to the terminal 202 via a route from the terminal 202 via the diode (second protective element) 502 , second common discharge line 9b and diode (second protective element) 503 . Accordingly, the circuit 11 is protected against breakdown of the electrostatic pulse.

公开(公告)号：JPH08330521A

公开(公告)日：1996-12-13

申请号：JP15527395

申请日：1995-05-30

Applicant: NEC CORP

Inventor： NARITA KAORU

IPC: H01L27/04 ,  H01L21/822 ,  H01L23/60 ,  H01L27/02 ,  H01L27/06

Abstract: PURPOSE: To obtain a compact protection circuit with a large dielectric strength for electrostatic protection by enabling each unit to be in a structure to be operated uniformly when the protection element of an electrostatic protection circuit is formed by a plurality of units. CONSTITUTION: A Vcc terminal is connected to an internal circuit by a Vcc wire 1 and a Vss terminal is connected to the internal circuit by a Gnd wire 2. When inserting an electrostatic protection element 3 consisting of a plurality of units (Units 1-4) between the Vcc wire 1 and the Gnd wire 2, each unit is connected to wires 5a and 5b, the wire 5a is connected to the Vcc wire 1 via a resistor (R1 ) 4a, and the wire 5b is connected to the Gnd wire 2 via a resistor (R2 ) 4b.

公开(公告)号：JPH08274267A

公开(公告)日：1996-10-18

申请号：JP7700195

申请日：1995-04-03

Applicant: NEC CORP

Inventor： NARITA KAORU

IPC: H01L29/78 ,  H01L27/02 ,  H01L27/06

Abstract: PURPOSE: To limit a parasitic bipolar in operation starting region, to start a protective element operating effectively against electrostatic pulses short in pulse width, and to obtain a protective element which is minimal in area and high in electrostatic breakdown inhibiting capacity by a method wherein a protective bipolar transistor unit is limited in width. CONSTITUTION: A protective bipolar transistor 2 is formed on NPN bipolar transistor composed of an N-type diffusion layer 121, a P-type semiconductor substrate 11, and an N-type diffusion layer 122, and a protective diode 3 is formed of a PN junction composed of a P-type diffusion layer 13 and an N-type diffusion layer. The diffusion layers are isolated from each other by an element isolating insulating film. The protective bipolar transistor units are each set to 20μm in width W, whereby a protective element is started operating effectively even to short pulses of overvoltage. Therefore, as the electrostatic breakdown strength of the protective elements is in proportion to the total width of the protective elements, the protective elements can be enhanced in electrostatic breakdown strength by increasing them in number.

公开(公告)号：JPH08204131A

公开(公告)日：1996-08-09

申请号：JP937595

申请日：1995-01-25

Applicant: NEC CORP

Inventor： NARITA KAORU

IPC: H01L21/822 ,  H01L23/00 ,  H01L27/02 ,  H01L27/04 ,  H03K19/003

Abstract: PURPOSE: To secure the sufficient electrostatic breakdown strength by a CDM (Change Device Model) testing method while suppressing the increase of chip area within an IC having electrostatic breakdown protecting function. CONSTITUTION: Within 2-1a, 2-1b, 2-3a, 2-3b, 2-4a, 2-4b, 2-6a, 2-6b, 2-7a, 2-7b wherein respectively, two each of power supply terminals 3-1, 3-4 with large stray capacitance and protecting elements of grounding terminals 3-3, 3-6, 3-7 are provided, the conduction resistances of these protective elements become half the conduction resistances of the protective elements 2-2, 2-5, 2-n of input terminals 3-2, 3-5, 3-n thereby enabling the voltage drop of the conduction resistance of the protective element by the discharge current of stray capacitance to be decreased for improving the electrostatic breakdown strength.

公开(公告)号：JPH039556A

公开(公告)日：1991-01-17

申请号：JP14635089

申请日：1989-06-07

Applicant: NEC CORP

Inventor： NARITA KAORU

IPC: H01L27/04 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108

Abstract: PURPOSE:To form a capacitance insulating film in excellent breakdown strength, leakage characteristics and insulation breakdown characteristics with time while enhancing the reliability of the title semiconductor integrated circuit device by a method wherein a silicon oxide film is formed in a groove part of a semiconductor substrate to be steam-processed later. CONSTITUTION:A groove 102 is formed in a semiconductor substrate 101 comprising silicon and after finishing a process such as ion implantation, a silicon oxide film 103 is formed by pressure-reduced CVD process using a mixed gas containing SiH4 and N2O as reactive gas at the temperature of 800-850 deg.C and the pressure of 0-100 Pa. At this time, the silicon oxide film 103 is not made thinner at the groove corner parts thereby enabling the silicon oxide film in even film thickness in the groove to be formed due to the pressure reduced CVD process. Next, the heat treatment process is performed at 750 deg.C for around 5 minutes in steam atmosphere. Through these procedures, the deterioration in the breakdown strength, leakage characteristics and the insulation breakdown characteristics with time as the capacitance insulating film can be avoided while enhancing the reliability of the title device.

公开(公告)号：JPH02177417A

公开(公告)日：1990-07-10

申请号：JP33112888

申请日：1988-12-28

Applicant: NEC CORP

Inventor： NARITA KAORU

IPC: G03F9/00 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To make it possible to put indispensable minimum sheets of wafers, wherein test patterns ar put, in one lot by providing a main controller which decides exposure sequence by the signals that detected reflected laser beams from a mark for setting sequence on a wafer and sends out signals to a blind controller and a stage controller. CONSTITUTION:This device includes a laser oscillator 1, a detector 4, which receives laser beams from a laser oscillator 1 applied to a semiconductor wafer 3 and detects a mark for setting sequence on the semiconductor wafer 3, a main controller 5, which decides exposure sequence by signals from the detector 4 and sends out signals to a blind controller 6 and a stage controller 7, said blind controller, which controls a blind 7 by the signals from the main controller 5, and said stage controller 8, which shifts the stage 2 to place the semiconduc tor wafer 3 by signals from the main controller 5. Hereby, since the exposure sequence can be selected simply, optical number of wafers, wherein test patterns are put, can be put in the same lot to be subjected to the exposure.

公开(公告)号：JP2013231714A

公开(公告)日：2013-11-14

申请号：JP2013076939

申请日：2013-04-02

Applicant: Nec Corp ,  日本電気株式会社

Inventor： NARITA KAORU

IPC: G01J1/02 ,  G01J1/42

Abstract: PROBLEM TO BE SOLVED: To provide an infrared image sensor which enables higher number of pixels and higher sensitivity, but can be manufactured at a much lower cost than conventional ones because of its structure and manufacturing method simplified.SOLUTION: An infrared image sensor includes a readout circuit unit 107 formed on a substrate 101, a resonator connected to the readout circuit, a first coil 105 forming part of the resonator, a thermistor resistor 103 thermally isolated from the substrate, and a second coil 106 connected to the thermistor resistor and electromagnetically connected to the first coil. A resistance change of the thermistor resistor is read out as a change of the impedance of the resonator.

Abstract translation: 要解决的问题：提供一种红外图像传感器，其能够实现更高数量的像素和更高的灵敏度，但由于其结构和制造方法的简化，可以以比现有技术更低的成本制造。解决方案：红外图像传感器包括 形成在基板101上的读出电路单元107，连接到读出电路的谐振器，形成谐振器的一部分的第一线圈105，与基板热隔离的热敏电阻103，以及与热敏电阻电阻连接的第二线圈106 连接到第一线圈。 作为谐振器的阻抗的变化，读出热敏电阻电阻器的电阻变化。

公开(公告)号：JPH11150231A

公开(公告)日：1999-06-02

申请号：JP25899398

申请日：1998-09-11

Applicant: NEC CORP

Inventor： FUJII TAKEO ,  NARITA KAORU ,  HORIGUCHI YOKO

IPC: H01L27/04 ,  H01L21/822 ,  H01L23/50

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device of a lead-on-chip(LOC) type which can lighten the effects of an electromotive force induced in adjacent non- connected in leads by an inductance of the non-connect leads, when an electrostatic voltage is applied to the non-connect leads. SOLUTION: Non-connected leads 12a are made shorter than connect leads 12b to reduce an inductance of the non-connect leads 12a, or a protection characteristic of a protection circuit connected to the lead 12a is shifted from that of a protection circuit connected to the lead 12b. In this case, the time constant of the protection circuit connected to the leads 12a is made larger than that of the protection circuit connected to the leads 12b. Further, a clamp characteristic of the protection circuit of the leads 12b determining its protection characteristic is made larger than that of the protection circuit of the leads 12a.