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公开(公告)号：US11006058B2
公开(公告)日：2021-05-11
申请号：US16592051
申请日：2019-10-03
Applicant: RAYTHEON COMPANY
Inventor： Christian M. Boemler
IPC: H04N5/355 , H01L27/146 , H04N5/3745 , H04N5/378
Abstract: A pixel includes an integration capacitor coupled between a system voltage and a pump voltage source and having a first side and a second side. The pixel can be operated to have a large full well by: storing charge from a photo-current source in the integration capacitor; reading out the integration capacitor; resetting the integration capacitor by connecting the capacitor to a column line through a select transistor; while resetting, setting the pump voltage source to the system voltage; and after resetting, setting the pump voltage to ground to create a negative voltage between the integration capacitor and column line.
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42.发明授权公开(公告)号：US10242268B2
公开(公告)日：2019-03-26
申请号：US15424509
申请日：2017-02-03
Applicant: Raytheon Company
Inventor： Micky R. Harris , Eric J. Beuville , Juliette S. Costa , Christian M. Boemler , Mark A. Massie
IPC: G06K9/00 , G01T1/17 , H04N5/3745 , H04N5/14 , H04N5/369 , H04N1/409 , H04N5/355 , G01J1/02 , G01S17/02
Abstract: A method includes generating an intensity value based on illumination received at a pixel of an imaging system. The intensity value is generated by integrating values using a first counter of a detector during a first period of time. The method also includes integrating the values repeatedly during smaller second periods of time within the first period of time using a second counter of the detector. The second counter has a lower bit resolution than the first counter. The method further includes resetting the second counter for each of the second periods of time. In addition, the method includes generating a pixel event indicator in response to the second counter outputting a specified value. The method may also include determining whether one or more neighboring detectors also generated one or more pixel event indicators and generating an event indicator when the one or more neighboring detectors also generated the one or more pixel event indicators.
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公开(公告)号：US10128297B2
公开(公告)日：2018-11-13
申请号：US14947575
申请日：2015-11-20
Applicant: Raytheon Company
Inventor： John J. Drab , Justin Gordon Adams Wehner , Christian M. Boemler
IPC: H01L31/105 , H01L27/146 , H01L29/868 , H01L27/144
Abstract: A semiconductor structure having: a silicon structure; and a plurality of laterally spaced PiN diodes formed in the silicon structure; and a surface of the silicon structure configured to reduce reverse bias leakage current through the PiN diodes. In one embodiment, a gate electrode structures is disposed on a surface of the silicon structure, the gate electrode structure having portions disposed between adjacent pairs of the diodes, the gate structure being biased to prevent leakage current through the diodes.
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Patent Agency Ranking
公开(公告)号：US20180278263A1
公开(公告)日：2018-09-27
申请号：US15466417
申请日：2017-03-22
Applicant: Raytheon Company
Inventor： Christian M. Boemler
Abstract: A single slope analog to digital converter includes a comparator having a positive input and a negative input and a comparator output, a counter and a latch connected to an output of the counter and that includes a trigger input. Also included is a pulse generator coupled to the comparator output that produces a pulse of a defined width each time a signal on the negative input transitions from a voltage level that is below a voltage level on the positive input to a voltage level that is above the voltage level on the positive input.
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公开(公告)号：US20180109749A1
公开(公告)日：2018-04-19
申请号：US15297225
申请日：2016-10-19
Applicant: Raytheon Company
Inventor： Christian M. Boemler
Abstract: An electro-optical sensor chip assembly (SCA) that includes a detection device that includes an array of detector unit cells arranged in a matrix and that produce an electrical output in response to light. The SCA also includes an integrated control circuit in electrical communication with the detection device that includes a control word store to store a dataword. The control word store includes at least three sub-latches to redundantly store at least one bit of the dataword. The at least three sub-latches include a first sub-latch, a second sub-latch and a third sub-latch, each of the first sub-latch, the second sub-latch and the third sub-latch including an output and two recovery inputs, and the output of the first and third sub-latches are connected to the recovery inputs of the second sub-latch.
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公开(公告)号：US20170295333A1
公开(公告)日：2017-10-12
申请号：US15096572
申请日：2016-04-12
Applicant: RAYTHEON COMPANY
Inventor： Christian M. Boemler
CPC classification number: H04N5/3698 , G01J1/44 , H04N5/37455 , H04N5/378
Abstract: According to one aspect, embodiments herein provide a digital unit cell comprising a photodiode, an integration capacitor, a comparator configured to compare a voltage across the integration capacitor with a threshold voltage and to generate a control signal at a first level each time the voltage across the integration capacitor is greater than the threshold voltage, a charge subtraction circuit configured to receive the control signal at the first level and to discharge accumulated charge on the integration capacitor each time the control signal at the first level is received, at least one analog counter configured to receive the control signal at the first level from the comparator and to decrease a count voltage by a fixed amount each time the control signal at the first level is received from the comparator, and a counter readout circuit configured to provide the count voltage to an image processing circuit.
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公开(公告)号：US09762824B2
公开(公告)日：2017-09-12
申请号：US14984571
申请日：2015-12-30
Applicant: RAYTHEON COMPANY
Inventor： Christian M. Boemler
CPC classification number: H04N5/3575 , H04N5/3559 , H04N5/37206 , H04N5/37452
Abstract: An imaging system unit cell and method of detecting an image. One example of an imaging system unit cell includes a photodetector configured to generate a photo-current in response to receiving optical radiation, a variable capacitance charge storing circuit in electrical communication with the photodetector and configured to integrate an electrical charge accumulated from the photo-current, a control circuit configured to monitor an integration voltage across the variable capacitance charge storing circuit and adjust a capacitance of the variable capacitance charge storing circuit based on the integration voltage, and an output configured to provide an output voltage based at least in part on the integrated voltage.
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公开(公告)号：US20150035014A1
公开(公告)日：2015-02-05
申请号：US13959081
申请日：2013-08-05
Applicant: Raytheon Company
Inventor： John J. Drab , Justin Gordon Adams Wehner , Christian M. Boemler
IPC: H01L27/146 , H01L29/868
CPC classification number: H01L27/14643 , H01L27/1446 , H01L27/14605 , H01L27/14649 , H01L27/14689 , H01L29/868 , H01L31/105
Abstract: A semiconductor structure having: a silicon structure; and a plurality of laterally spaced PiN diodes formed in the silicon structure; and a surface of the silicon structure configured to reduce reverse bias leakage current through the PiN diodes. In one embodiment, a gate electrode structures is disposed on a surface of the silicon structure, the gate electrode structure having portions disposed between adjacent pairs of the diodes, the gate structure being biased to prevent leakage current through the diodes.
Abstract translation: 一种半导体结构，具有：硅结构; 以及形成在所述硅结构中的多个横向间隔开的PiN二极管; 并且所述硅结构的表面被配置为减少穿过所述PiN二极管的反向偏置漏电流。 在一个实施例中，栅极电极结构设置在硅结构的表面上，栅极电极结构具有设置在相邻的二极管对之间的部分，栅极结构被偏置以防止通过二极管的漏电流。
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