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公开(公告)号：US20240187749A1
公开(公告)日：2024-06-06
申请号：US18072932
申请日：2022-12-01
Applicant: Raytheon Company
Inventor： David J. Gulbransen , Jae Hyun Kyung , Christian M. Boemler
IPC: H04N25/443 , H04N25/441 , H04N25/704 , H04N25/707 , H04N25/78
CPC classification number: H04N25/443 , H04N25/441 , H04N25/704 , H04N25/707 , H04N25/78
Abstract: A sensing system includes a focal plane array, a detector dual-input circuit, a detector selector circuit and a select module. The focal plane array includes a plurality of detectors. The detector dual-input circuit combines outputs from the detectors received at a first input channel without outputs received at a second input channel. The detector selector circuit establishes a first signal path between the detectors and the first input channel and a second signal path between the detectors and the second input channel. The detector selector circuit includes a mask that maps the detectors to a first detector group or a second detector group. Based on the mask designation, the select module connects one or more of the detectors to the first signal path to establish the first detector group and connects one or more of the detectors to the second signal path to establish the second detector group.
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公开(公告)号：US11546534B2
公开(公告)日：2023-01-03
申请号：US17188869
申请日：2021-03-01
Applicant: Raytheon Company
Inventor： Christian M. Boemler
Abstract: Methods and apparatus for an imaging sensor having background subtraction including integrating photocurrent on a first capacitor, and, after a voltage on the first capacitor reaches a threshold, directing the photocurrent to a second capacitor. The first capacitor can be reset. This can be repeated a given number of times until a value on the second capacitor is read out.
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公开(公告)号：US10971538B2
公开(公告)日：2021-04-06
申请号：US16135611
申请日：2018-09-19
Applicant: Raytheon Company
Inventor： John J. Drab , Justin Gordon Adams Wehner , Christian M. Boemler
IPC: H01L27/146 , H01L27/144 , H01L29/868 , H01L31/105
Abstract: A semiconductor structure having: a silicon structure; and a plurality of laterally spaced PiN diodes formed in the silicon structure; and a surface of the silicon structure configured to reduce reverse bias leakage current through the PiN diodes. In one embodiment, a gate electrode structures is disposed on a surface of the silicon structure, the gate electrode structure having portions disposed between adjacent pairs of the diodes, the gate structure being biased to prevent leakage current through the diodes.
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公开(公告)号：US10855281B2
公开(公告)日：2020-12-01
申请号：US16541546
申请日：2019-08-15
Applicant: Raytheon Company
Inventor： Christian M. Boemler
IPC: H03K19/0185 , H03K19/00 , H03K19/0175
Abstract: A wide supply range digital level shifter circuit shifts between a variable desired output voltage ranging from a first voltage level and a second voltage level. The wide supply range digital level shifter circuit includes a latch circuit, a first bleeder circuit, and a second bleeder circuit. The latch circuit receives the first voltage level and the second voltage level, and includes first and second clocked differential switches. The first bleeder circuit is connected between the second voltage rail and the first differential switch and is configured to receive a first digital input voltage. The second bleeder circuit is connected between the second voltage rail and the second differential switch and is configured to receive a second digital input voltage. The first and second bleeder circuits isolate the first and second digital input voltages from the variable desired output voltage.
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公开(公告)号：US20190019836A1
公开(公告)日：2019-01-17
申请号：US16135611
申请日：2018-09-19
Applicant: Raytheon Company
Inventor： John J. Drab , Justin Gordon Adams Wehner , Christian M. Boemler
IPC: H01L27/146 , H01L31/105 , H01L29/868 , H01L27/144
Abstract: A semiconductor structure having: a silicon structure; and a plurality of laterally spaced PiN diodes formed in the silicon structure; and a surface of the silicon structure configured to reduce reverse bias leakage current through the PiN diodes. In one embodiment, a gate electrode structures is disposed on a surface of the silicon structure, the gate electrode structure having portions disposed between adjacent pairs of the diodes, the gate structure being biased to prevent leakage current through the diodes.
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Patent Agency Ranking
6.发明申请公开(公告)号：US20180225521A1
公开(公告)日：2018-08-09
申请号：US15424509
申请日：2017-02-03
Applicant: Raytheon Company
Inventor： Micky R. Harris , Eric J. Beuville , Juliette S. Costa , Christian M. Boemler , Mark A. Massie
CPC classification number: G06K9/00771 , G01J1/0266 , G01S17/026 , G01T1/171 , G06K9/00744 , G06K2009/00738 , H04N1/4092 , H04N5/144 , H04N5/147 , H04N5/3559 , H04N5/3696 , H04N5/37455
Abstract: A method includes generating an intensity value based on illumination received at a pixel of an imaging system. The intensity value is generated by integrating values using a first counter of a detector during a first period of time. The method also includes integrating the values repeatedly during smaller second periods of time within the first period of time using a second counter of the detector. The second counter has a lower bit resolution than the first counter. The method further includes resetting the second counter for each of the second periods of time. In addition, the method includes generating a pixel event indicator in response to the second counter outputting a specified value. The method may also include determining whether one or more neighboring detectors also generated one or more pixel event indicators and generating an event indicator when the one or more neighboring detectors also generated the one or more pixel event indicators.
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公开(公告)号：US20160086998A1
公开(公告)日：2016-03-24
申请号：US14947575
申请日：2015-11-20
Applicant: Raytheon Company
Inventor： John J. Drab , Justin Gordon Adams Wehner , Christian M. Boemler
IPC: H01L27/146 , H01L31/105
CPC classification number: H01L27/14643 , H01L27/1446 , H01L27/14605 , H01L27/14649 , H01L27/14689 , H01L29/868 , H01L31/105
Abstract: A semiconductor structure having: a silicon structure; and a plurality of laterally spaced PiN diodes formed in the silicon structure; and a surface of the silicon structure configured to reduce reverse bias leakage current through the PiN diodes. In one embodiment, a gate electrode structures is disposed on a surface of the silicon structure, the gate electrode structure having portions disposed between adjacent pairs of the diodes, the gate structure being biased to prevent leakage current through the diodes.
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公开(公告)号：US20230095511A1
公开(公告)日：2023-03-30
申请号：US17480554
申请日：2021-09-21
Applicant: Raytheon Company
Inventor： Christian M. Boemler
Abstract: An apparatus includes a photodetector configured to generate an electrical current based on received illumination. The apparatus also includes an integration capacitor configured to integrate the electrical current and generate an integrator voltage. The apparatus further includes an amplifier configured to control a transistor switch coupled in series between the photodetector and the integration capacitor. The apparatus also includes an event detector configured to sense a high-energy event affecting the photodetector. In addition, the apparatus includes a switchable clamp coupled across inputs of the amplifier, where the event detector is configured to close the switchable clamp in response to sensing the high-energy event.
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公开(公告)号：US20200112311A1
公开(公告)日：2020-04-09
申请号：US16541546
申请日：2019-08-15
Applicant: Raytheon Company
Inventor： Christian M. Boemler
IPC: H03K19/0185 , H03K19/0175 , H03K19/00
Abstract: A wide supply range digital level shifter circuit shifts between a variable desired output voltage ranging from a first voltage level and a second voltage level. The wide supply range digital level shifter circuit includes a latch circuit, a first bleeder circuit, and a second bleeder circuit. The latch circuit receives the first voltage level and the second voltage level, and includes first and second clocked differential switches. The first bleeder circuit is connected between the second voltage rail and the first differential switch and is configured to receive a first digital input voltage. The second bleeder circuit is connected between the second voltage rail and the second differential switch and is configured to receive a second digital input voltage. The first and second bleeder circuits isolate the first and second digital input voltages from the variable desired output voltage.
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公开(公告)号：US09854192B2
公开(公告)日：2017-12-26
申请号：US15096572
申请日：2016-04-12
Applicant: RAYTHEON COMPANY
Inventor： Christian M. Boemler
CPC classification number: H04N5/3698 , G01J1/44 , H04N5/37455 , H04N5/378
Abstract: According to one aspect, embodiments herein provide a digital unit cell comprising a photodiode, an integration capacitor, a comparator configured to compare a voltage across the integration capacitor with a threshold voltage and to generate a control signal at a first level each time the voltage across the integration capacitor is greater than the threshold voltage, a charge subtraction circuit configured to receive the control signal at the first level and to discharge accumulated charge on the integration capacitor each time the control signal at the first level is received, at least one analog counter configured to receive the control signal at the first level from the comparator and to decrease a count voltage by a fixed amount each time the control signal at the first level is received from the comparator, and a counter readout circuit configured to provide the count voltage to an image processing circuit.
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