Abstract:
Embodiments described include a non-polymeric voltage switchable dielectric (VSD) material comprising substantially of a grain structure formed from only a single compound, processes for making same, and applications for using such non-polymeric VSD materials.
Abstract:
One or more embodiments provide for a composition that includes (i) organic material that is conductive or semi-conductive, and (ii) conductor and/or semiconductor particles other than the organic material. The organic material and the conductor and/or semiconductor particles are combined to provide the composition with a characteristic of being (i) dielectric in absence of a voltage that exceeds a characteristic voltage level, and (ii) conductive with application of the voltage exceeding the characteristic voltage level.
Abstract:
Various aspects provide for structures and devices to protect against spurious electrical events (e.g., electrostatic discharge). Some embodiments incorporate a voltage switchable dielectric material (VSDM) bridging a gap between two conductive pads. Normally insulating, the VSDM may conduct current from one pad to the other during a spurious electrical event (e.g,. shunting current to ground). Some aspects include gaps having a gap width that is greater than 50% of a spacing between electrical leads connected to the pads. Some devices include single layers of VSDM. Some devices include multiple layers of VSDM. Various devices may be designed to increase a ratio of active volume (of VSDM) to inactive volume.
Abstract:
A substrate device includes a layer of non-linear resistive transient protective material and a plurality of conductive elements that form part of a conductive layer. The conductive elements include a pair of electrodes that are spaced by a gap, but which electrically interconnect when the transient protective material is conductive. The substrate includes features to linearize a transient electrical path that is formed across the gap.
Abstract:
A core layer structure is provided for substrate and packed devices. The core layer structure includes a first layer, a second layer combined with the first layer. A layer of voltage switchable dielectric (VSD) material provided in between the first layer and second layer.
Abstract:
Various disclosed aspects provide for protecting components (e.g., integrated circuits) from spurious electrical overvoltage events, such as electrostatic discharge. Embedded components with voltage switchable dielectric materials may protect circuits against electrostatic discharge.
Abstract:
A composition of voltage switchable dielectric (VSD) material that comprises a concentration of core shelled particles that individually comprise a conductor core and a conductor shell, so as to form a conductor-on- conductor core shell particle constituent for the VSD material.
Abstract:
Systems and methods include depositing one or more materials on a voltage switchable dielectric material. In certain aspects, a voltage switchable dielectric material is disposed on a conductive backplane. In some embodiments, a voltage switchable dielectric material includes regions having different characteristic voltages associated with deposition thereon. Some embodiments include masking, and may include the use of a removable contact mask. Certain embodiments include electrografting. Some embodiments include an intermediate layer disposed between two layers.
Abstract:
Systems and methods include depositing one or more materials on a voltage switchable dielectric material. In certain aspects, a voltage switchable dielectric material is disposed on a conductive backplane. In some embodiments, a voltage switchable dielectric material includes regions having different characteristic voltages associated with deposition thereon. Some embodiments include masking, and may include the use of a removable contact mask. Certain embodiments include electrografting. Some embodiments include an intermediate layer disposed between two layers.
Abstract:
A composition of voltage switchable dielectric (VSD) material that comprises a concentration of core shelled particles that individually comprise a conductor core and a shell, the shell of each core shelled particle being (i) multilayered, and/or (ii) heterogeneous. As depicted, VSD material 100 includes matrix binder 105 and various types of particle constituents, dispersed in the binder in various concentrations. The particle constituents of the VSD material may include a combination of conductive particles 110, semiconductor particles 120, nano-dimensioned particles 130 and/or core shelled particles 140. In some implementations, the core shelled particles may substitute for some or all of the conductive particles. As an alternative or variation, the VSD composition may omit the use of conductive particles, semiconductive particles, or nano-dimensioned particles, particularly with the presence of a concentration of core shelled particles. Thus, the type of particle constituent that are included in the VSD composition may vary, depending on the desired electrical and physical characteristics of the VSD material. For example, some VSD compositions may include conductive particles, but not semiconductive particles and/or nano-dimensioned particles (like carbon nanotube). Still further, other embodiments may omit use of conductive particles.