公开(公告)号：JPH06283722A

公开(公告)日：1994-10-07

申请号：JP6888893

申请日：1993-03-26

Applicant: SONY CORP

Inventor： MAARI KOUICHI

IPC: H01L21/8247 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

Abstract: PURPOSE:To provide a semiconductor device which can be integrated highly, in which a void or the like is not caused with reference to an interlayer insulating film, whose intermediate insulating layer is not degraded and which is provided with a floating gate having an excellent element characteristic and to provide its manufacturing method. CONSTITUTION:An element isolation region 20 is formed, so as to be a stripe shape, on the surface of a semiconductor substrate 1, a floating gate 24a and a control gate 28a are formed, the element isolation region 20 is removed partly by an etching operation or the like in a part corresponding to a common source region 40 for a transistor, and an isolation groove part 36 is formed. At this time, sidewalls 38 are formed on sidewalls of the isolation groove part 36, and they are formed so as to become narrow along the depth direction. From another point of view, at least the side end part of a common source in a floating gate is covered with a control gate so that damage due to an etching operation does not act on an intermediate insulating layer.