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公开(公告)号：JP2006060242A
公开(公告)日：2006-03-02
申请号：JP2005251591
申请日：2005-08-31
Inventor： NARUI HIRONOBU , DOI MASATO , SAWARA KENJI , MATSUDA OSAMU
Abstract: PROBLEM TO BE SOLVED: To reduce leakage current between a semiconductor laser and a photodiode formed on the same substrate.
SOLUTION: The optical device comprises: the semiconductor laser LD and photodiode PD closely formed by crystal growth with a resonator longitudinal orientation as a [0-11] crystal axis orientation on the same semiconductor substrate with a {100} crystal plane as a main surface; a first semiconductor layer 40 and a second semiconductor layer 49 of different conductive types that are continuously crystal-grown so as to allow the photodiode PD to have the slanted plane of B crystal plane; a pn junction formed on only the upper surface of the layer 40 except the {111} B crystal plane; the {111} B crystal plane becoming a reflector 33 that reflects the light reflected from the semiconductor laser LD; and a leakage current blocking layer 48 of a heavily doped region between the semiconductor laser LD and photodiode PD.
COPYRIGHT: (C)2006,JPO&NCIPIAbstract translation: 要解决的问题：为了减少半导体激光器和形成在同一衬底上的光电二极管之间的漏电流。 解决方案：光学器件包括：通过晶体生长紧密地形成的半导体激光器LD和光电二极管PD，在具有ä100}晶面的同一半导体衬底上以谐振器纵向取向作为[0-11]晶轴取向，作为 主表面 不同导电类型的第一半导体层40和第二半导体层49被连续晶体生长以使光电二极管PD具有B晶面的倾斜面; 仅在层40的上表面上形成的pn结，除了ä111} B晶面外; ä111} B晶体成为反射从半导体激光器LD反射的光的反射器33; 以及半导体激光器LD和光电二极管PD之间的重掺杂区域的漏电流阻挡层48。 版权所有（C）2006，JPO＆NCIPI
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公开(公告)号：JP2005250270A
公开(公告)日：2005-09-15
申请号：JP2004062744
申请日：2004-03-05
Inventor： HONGO KAZUYASU , MATSUDA OSAMU , SHINO KUNINORI , HORIE KAZUYOSHI
Abstract: PROBLEM TO BE SOLVED: To provide a star coupler in which variations in branching ratios of outputs is improved and losses are suppressed. SOLUTION: In the star coupler, a plurality of input-side branch waveguides 5 are formed at one end of a main waveguide 4 and a plurality of output-side waveguides 6 are formed at another side of the main waveguide 4. Shape of waveguides are set so that the minimum radius of curvature in curved parts constituting the input-side branch waveguides 5 becomes smaller than the minimum radius of curvature in curved parts constituting the output-side branch waveguides 6 and each input-side branch waveguide 5 excites light of a higher-order mode from light of a lower-order mode. Moreover, respective output-side branch waveguides 6 propagate light of the higher-order mode excited in each input-side branch waveguide 5. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract translation: 要解决的问题：提供一种星形耦合器，其中改善输出的分支比的变化并且抑制损耗。 解决方案：在星形耦合器中，在主波导4的一端形成多个输入侧分支波导5，并且多个输出侧波导6形成在主波导4的另一侧。形状 设置波导，使得构成输入侧分支波导5的弯曲部分中的最小曲率半径变得小于构成输出侧分支波导6的弯曲部分中的最小曲率半径，并且每个输入侧分支波导5激发 来自低阶模式的光的高阶模式的光。 此外，各个输出侧分支波导6传播在每个输入侧分支波导5中激发的高阶模的光。版权所有（C）2005，JPO和NCIPI
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公开(公告)号：JPH08235663A
公开(公告)日：1996-09-13
申请号：JP3718395
申请日：1995-02-24
Applicant: SONY CORP
Inventor： MATSUDA OSAMU
IPC: G11B11/10 , G11B7/09 , G11B7/12 , G11B7/123 , G11B7/13 , G11B7/133 , G11B7/135 , G11B7/1353 , G11B11/105 , H01L31/10 , H01S3/06 , H01S3/1055 , H01S5/00
Abstract: PURPOSE: To simplify an optical structure, reduce the size thereof and improve stability of optical system by reflecting an outgoing light from a light emitting section with the part to be irradiated with the light beam and then isolating the returning light beam as the diffracted beam through a hologram element. CONSTITUTION: In an optical pickup 50, an outgoing light from a semiconductor laser LD of an optical coupling element 51 is reflected by a reflecting mirror 38, converged by a condensing means 3 such as a lens or the like and is then applied to the part to be irradiated, for example, a magneto-optical disc 2. The returning light LRO of the 0th order reflected by the surface of magneto- optical disc is isolated by a hologram element 33 into the diffracted light beams LR+1 , LR-2 of the +1st order and -1st order. In this case, since the light beam of the semiconductor LD is emitted to the front side, while a package window of the front surface is formed of a transparent heat sink 32, a thermal resistance of the semiconductor laser LD si lowered and improvement in reliability and thermal stability of the semiconductor laser LD can be assured.
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公开(公告)号：JPH06237045A
公开(公告)日：1994-08-23
申请号：JP17797893
申请日：1993-07-19
Applicant: SONY CORP
Inventor： SAWARA KENJI , NARUI HIRONOBU , DOI MASATO , MATSUDA OSAMU
Abstract: PURPOSE:To extend lifetime by a method wherein a returning light-induced noise of a semiconductor laser with the amount of the returning light taken into consideration, and the structure of its oscillator is optimized so that the density within the active layer is made lower than a certain value to maintain reliability with low power consumption. CONSTITUTION:An active layer 4, which is two dimensionally enclosed by a material whose energy gap is relatively large, and a current block layers 6-8 that directly contact with this active layer are provided. The thickness, width, and the length of the oscillator of the active layer 4 are selected in such a way that at least, the reflectance of the oscillator's end surface 14A on the light-emitting side may be less than 5%, the oscillation loss may be more than 100cm and the threshold carrier density may be 2.5X10 cm .
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公开(公告)号：JPH0644657B2
公开(公告)日：1994-06-08
申请号：JP6718885
申请日：1985-03-29
Applicant: SONY CORP
Inventor： MATSUDA OSAMU
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Patent Agency Ranking
公开(公告)号：JPH0677594A
公开(公告)日：1994-03-18
申请号：JP24857392
申请日：1992-08-25
Applicant: SONY CORP
Inventor： MATSUDA OSAMU , IWAMOTO KOJI , MARUTANI YUKITOSHI
Abstract: PURPOSE:To realize an inner stripe type semiconductor layer having a current narrowing structure which has low operating current, simple manufacturing steps and in which a width of a current stripe can be decided with high controllability. CONSTITUTION:A p-type InxGa1-xP layer 7 as an etching stop layer is epitaxially grown on a p-type Al0.2Ga0.8As layer 6 as a photoconductive layer to be used also as a p-type clad layer, an n-type Al0.3Ga0.7As layer 8 is epitaxially grown as a current stop layer, and then a stripelike opening 8a is formed at the layer 8 by wet etching.
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公开(公告)号：JPH04247348A
公开(公告)日：1992-09-03
申请号：JP3561591
申请日：1991-02-04
Applicant: SONY CORP
Inventor： MATSUDA OSAMU , FUKUMOTO ATSUSHI
IPC: G11B7/135 , G11B11/10 , G11B11/105
Abstract: PURPOSE:To attain the miniaturization and the reduction in weight of an optical system for a magneto-optical disk and to improve reliability. CONSTITUTION:First and second photodiode groups are provided on an integrated circuit board, and polarizing optical film is disposed on the surface of the first photodiode group, and also, a means which inclines the polarizing state of a laser beam made incident on the first photodiode group by a prescribed angle, for example, 45 deg. against the board in a state where no rotation of polarization on the magneto-optical disk is received by the laser beam is provided, and a signal recorded on the magneto-optical disk can be read out by detecting the strength of signals outputted from the first and second photodiode groups, respectively.
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公开(公告)号：JPH0437597B2
公开(公告)日：1992-06-19
申请号：JP21954282
申请日：1982-12-15
Applicant: SONY CORP
Inventor： MATSUDA OSAMU , SATO HIROMICHI , MORI YOSHIFUMI
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公开(公告)号：JPH02240839A
公开(公告)日：1990-09-25
申请号：JP6304089
申请日：1989-03-14
Applicant: SONY CORP
Inventor： MATSUDA OSAMU
Abstract: PURPOSE:To improve the cooling effect while attaining thin profile of the unit by arranging a semiconductor laser exposed in the vicinity of the revolving, and cooling the semiconductor laser forcibly with a swirling wind pressure of the disk. CONSTITUTION:A ceramic package 4 containing a semiconductor laser chip 20 or the like is mounted to an upper part of a support member 13 together with a lens while an outer bottom is directed upward so as to expose the outer part. Through the constitution above, the heat dissipating performance of the ceramic package 4 is improved and the package is cooled forcibly by the swirling wind pressure of the disk 26 and then the heat generated by the ceramic package 4 is effectively dissipated without any special provision of cooling means to prevent the temperature rise from exceeding the allowable temperature.
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公开(公告)号：JPH01179437A
公开(公告)日：1989-07-17
申请号：JP168788
申请日：1988-01-07
Applicant: SONY CORP
Inventor： MATSUDA OSAMU
Abstract: PURPOSE:To prevent whole package from being heated up to high temperature thereby avoiding the deterioration of a semiconductor element by a method wherein a gas vent is formed in a part formed of a metal in the package main body. CONSTITUTION:A semiconductor element 5 is contained in a package main body 1 and then the opening of the main body 1 is sealed with a cap 8 to shield the element 5 from atmosphere. At this time, a metal 3 forming a part of the main body 1 is provided with a gas vent 11 communicating with the element 5 containing space. The vent 11 can be easily sealed with solder e.g., by local heating using infrared rays. In such a constitution, the whole package can be prevented from being heated up to the high temperature to avoid the deterioration of the element 5.
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