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公开(公告)号：JP2001267273A
公开(公告)日：2001-09-28
申请号：JP2000130346
申请日：2000-04-28
Applicant: SUMITOMO CHEMICAL CO
Inventor： UEDA KAZUMASA , TAKASHIMA MASAYUKI
IPC: B24B37/00 , B24D3/28 , C09G1/02 , C09K3/14 , C09K13/00 , C23F3/00 , H01L21/304 , H01L21/321
Abstract: PROBLEM TO BE SOLVED: To provide an abrasive for metal, an abrasive composition, and a polishing method using them whereby a metal can be polished at high speed, and the generation of flaws on the polishing surface can be suppressed, and the etching of metal can be suppressed, and further, provide an abrasive composition whereby the flatness of polishing surface can be further improved. SOLUTION: These are provided [1] an abrasive for metal comprising particles of a resin, etc., each of which has a functional group for capturing metal ions, [2] an abrasive for metal comprising particles of a resin, etc., each of which contains a compound having a functional group for capturing metal ions, [3] an abrasive composition for metal containing the abrasive for metal described in [1] or [2], an oxidant, and water, [4] an abrasive composition for metal described in [3] which contains further at least one kind selected from the group comprising spherical particles of resins, etc., benzotriazole, and a benzotriazole derivative, [5] a polishing method for polishing metals by chemical mechanical polishing which uses as its abrasive composition the abrasive composition for metal described in [3] or [4].
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公开(公告)号：JP2001214200A
公开(公告)日：2001-08-07
申请号：JP2000028130
申请日：2000-02-04
Applicant: SUMITOMO CHEMICAL CO
Inventor： TAKASHIMA MASAYUKI
Abstract: PROBLEM TO BE SOLVED: To provide a detergent liquid for an electronic part which is suitably applicable for cleansing an electronic part having a surface with exposed silicon and an exposed metal other than the silicon. SOLUTION: This detergent liquid for an electronic part contains a hydroxide, water, an erosion-suppressing agent, a water-soluble organic compound and a compound represented by the formula (I) and/or the formula (II); HO-((EO) x-(PO)y)z-H (I) (wherein, EO is an oxyethylene group; PO is an oxypropylene group; (x) and (y) are each an integer satisfying that x/(x+y) is 0.05 to 0.4; and (z) is an positive integer) and R-[((EO)x-(PO)y)z-H]m (II) (wherein, EO, PO, (x), (y) and (z) are the same as defined in equation (I); R is a residual group obtained by removing hydrogen from a hydroxyl group of an alcohol or an amine or a residual group obtained by removing hydrogen from an amino group; and (m) is an integer of 1 or more).
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公开(公告)号：JP2001214198A
公开(公告)日：2001-08-07
申请号：JP2000028126
申请日：2000-02-04
Applicant: SUMITOMO CHEMICAL CO
Inventor： TAKASHIMA MASAYUKI
Abstract: PROBLEM TO BE SOLVED: To provide a detergent liquid for an electronic part which effectively can clean a fine contamination and an organic material from a surface of an electronic part with preventing tungsten of the electronic part from being eroded, particularly to provide a detergent liquid which is suitable for cleansing an electronic part having a tungsten-exposed surface. SOLUTION: This detergent liquid for an electronic part contains (1) at least either one of an organic compound having at least one mercapto group in a molecule, an organic compound having at least two hydroxyl group in a molecule or an organic compound having at least one hydroxyl group and one carboxylic group in a molecule, (2) a hydroxide and (3) water.
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公开(公告)号：JP2000001667A
公开(公告)日：2000-01-07
申请号：JP16831698
申请日：1998-06-16
Applicant: SUMITOMO CHEMICAL CO
Inventor： SARARA KENICHI , TAKASHIMA MASAYUKI , SUKUMODA ATSUSHI
IPC: C09K3/14 , H01L21/304
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device producing abrasive excellent in dispersion stability and removability from abraded surface and capable of obtaining the polished surface apart from flaws, dishing and residual particles by including a diketone compound and hydrogen peroxide together with vinyl compound polymer resin particles. SOLUTION: This abrasive, in the form of an aqueous emulsion, for applying a chemically mechanical polishing to a metal surface (e.g. copper-based metal) deposited on a silicone wafer, comprises; (A) vinyl compound polymer resin particles (having an average particle size of e.g. 0.05 to 0.5 μm) resulted from emulsion polymerization, (B) a β-diketone compound e.g. acetyl acetone and (C) hydrogen peroxide. The abrasive pref. comprises 0.5 to 20 wt.% of component A, 0.01 to 20 wt.% of component B and 0.05 to 10 wt.% of component C.
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公开(公告)号：JPH11156702A
公开(公告)日：1999-06-15
申请号：JP33168697
申请日：1997-12-02
Applicant: SUMITOMO CHEMICAL CO
Inventor： TAKASHIMA MASAYUKI , SUKUMODA ATSUSHI , SARARA KENICHI
IPC: B24B37/00 , C09K3/14 , H01L21/304
Abstract: PROBLEM TO BE SOLVED: To provide a polishing agent for the manufacture of a semiconductor device and its polishing method requiring the dispersing process for polishing perticulates, excellent in dispersiveness a slurry, causing no aggregation nor precipitation even stored for the long period capable of arbitrarily controlling grain size, of polyshing perticulates at the time of emulsifying polymerization, providing stable polishing characteristics, preventing the occurrence of defects and dishing over a polishing surface, being completely eliminated from the surface after polishing, and furthermore, and realizing polishing speed required for its manufacture. SOLUTION: This polishing agent comprises an aqueous emulsion for polishing a metallic film of Al covering a silicon wafer by means of chemical and mechanical polishing, containing a complexing agent such as ammonium fluoride which reacts with a metal forming the metallic film to produce a water soluble complex, vinyl compound polymer resin perticulates obtained by emulsifying polymerization in the non-existence of emulsifying agent or dispersion agent, and no emulsifying agent or dispersion agent.
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Patent Agency Ranking
公开(公告)号：JPH0750281A
公开(公告)日：1995-02-21
申请号：JP19451693
申请日：1993-08-05
Applicant: SUMITOMO CHEMICAL CO
Inventor： SARARA KENICHI , TAKASHIMA MASAYUKI
IPC: H01L21/304
Abstract: PURPOSE:To obtain a silicon wafer of high cleanness wherein adhesion of metal is restrained after the silicon wafer is cleaned with cleaning fluid containing sulfuric acid or hydrochloric acid. CONSTITUTION:After a silicon wafer is cleaned with cleaning fluid containing sulfuric acid or hydrochloric acid, e.g. mixed solution (SPM) of sulfuric acid and hydrogen peroxide or mixed solution (HPM) composed of hydrochloric acid, hydrogen peroxide, and ultra-pure water, the wafer is treated with aqueous solution of hydrofluoric acid or aqueous solution of buffer hydrofluoric acid (BHF).
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公开(公告)号：JP2005101479A
公开(公告)日：2005-04-14
申请号：JP2003375298
申请日：2003-11-05
Applicant: Sumitomo Chemical Co Ltd , 住友化学株式会社
Inventor： TAKASHIMA MASAYUKI
IPC: H01L21/304
Abstract: PROBLEM TO BE SOLVED: To provide a cleaning liquid for a semiconductor substrate which can be used at a room temperature, and which is configured to maintain excellent cleaning performance for removal of particle-shaped foreign matter or ion-shaped foreign matter or the like on a semiconductor, and to sharply suppress etching to a silicon oxide film or a metallic film comprising tungsten or the like.
SOLUTION: This excellent cleaning liquid for a semiconductor substrate is configured to be used at a room temperature, and to maintain the removing performance of metallic ion or metallic impurity on an excellent semiconductor substrate surface, and to prevent etching from being generated in a silicon oxide film or a metallic film such as tungsten. Thus, (1) the cleaning technology of a semiconductor substrate surface in manufacturing a semiconductor device is becoming gradually significant for the micro-fabrication and high speed operation of the semiconductor device, (2) not only silicon but also a silicon oxide film and a silicon nitride film or the like are used as materials constituting the elements of the semiconductor device formed on a wafer, and a metallic film such as cobalt or tungsten is newly introduced in these days, and (3) cleaning liquid to efficiently remove impurity stuck to the wafer surface can be developed without damaging such materials constituting the elements of the semiconductor device that are used in these days.
COPYRIGHT: (C)2005,JPO&NCIPIAbstract translation: 要解决的问题：提供一种能够在室温下使用的半导体基板用清洗液，其特征在于，为了除去颗粒状异物或离子状异物，能够保持良好的清洗性能， 并且对于氧化硅膜或包含钨等的金属膜急剧地抑制蚀刻。 解决方案：这种优良的半导体基板用清洗液被配置为在室温下使用，并且能够在优异的半导体基板表面上保持金属离子或金属杂质的去除性能，并且防止在 氧化硅膜或钨等金属膜。 因此，（1）制造半导体器件时的半导体衬底表面的清洁技术对于半导体器件的微加工和高速操作变得逐渐显着，（2）不仅硅而且氧化硅膜和 氮化硅膜等被用作构成晶片上形成的半导体器件的元件的材料，并且在这些日子中重新引入诸如钴或钨的金属膜，和（3）清洗液体以有效地除去粘附到 可以显影晶片表面而不损坏构成这些天使用的半导体器件的元件的这种材料。 版权所有（C）2005，JPO＆NCIPI
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公开(公告)号：JP2003155586A
公开(公告)日：2003-05-30
申请号：JP2001351230
申请日：2001-11-16
Applicant: SUMITOMO CHEMICAL CO
Inventor： TAKASHIMA MASAYUKI
IPC: B08B3/08 , C11D7/06 , C11D7/32 , C11D7/34 , C11D17/00 , C11D17/08 , C23G1/16 , C23G1/20 , H01L21/304
Abstract: PROBLEM TO BE SOLVED: To provide cleaning solution for electronic parts which can remove copper oxide from a surface of copper, and excellent corrosion inhibition of copper. SOLUTION: The cleaning solution for electronic parts contains (a) at least one kind of >=2 C aliphatic alcoholic compound having at least one mercapto group in a molecule, (b) an organic hydroxide, and (c) at least one kind of alkaline compound selected from the groups consisting of inorganic hydroxides, alkanolamines and hydroxylamines.
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公开(公告)号：JP2002200554A
公开(公告)日：2002-07-16
申请号：JP2000399684
申请日：2000-12-28
Applicant: SUMITOMO CHEMICAL CO
Inventor： TAKASHIMA MASAYUKI , UEDA KAZUMASA
IPC: B24B37/20 , B24B37/24 , B24D3/06 , B24D11/00 , B24D13/14 , C08J5/14 , C08J5/20 , H01L21/304 , B24B37/00
Abstract: PROBLEM TO BE SOLVED: To provide a polishing pad which can make high speed polishing, restrains the generation of scratches and etchings on polished surfaces providing excellent machined surfaces and scarcely generates waste including abrasives, and a polishing device comprising the polishing pad used and a polishing method using the pad. SOLUTION: A metal polishing pad has a functional group for catching metal ions. A metal polishing device is a part of the constitution of the metal polishing pad. In the method of polishing metal by a chemical machine, the metal polishing device is used as a polishing device.
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50.发明专利
公开(公告)号：JP2000282096A
公开(公告)日：2000-10-10
申请号：JP9377499
申请日：1999-03-31
Applicant: ASAHI KAGAKU KOGYO CO LTD , SUMITOMO CHEMICAL CO
Inventor： OTA KOJI , TAKASHIMA MASAYUKI
Abstract: PROBLEM TO BE SOLVED: To obtain a corrosion inhibitor for a metal without corrosiveness when cleaning a metal, especially copper or a copper alloy, a cleaning liquid composition capable of removing impurities without corroding a copper wiring by adding the corrosion inhibitor to a cleaning liquid for a semiconductor device having a metal wiring, especially the copper wiring and to provide a method for cleaning using the cleaning liquid composition. SOLUTION: This corrosion inhibitor for a metal comprises one or more kinds of compounds selected from imidazoles, thiazoles and triazoles having at least one amino group or at least one thiol group in the molecule. The cleaning liquid composition is obtained by adding the corrosion inhibitor to a cleaning liquid suitable for cleaning a metal to be cleaned. The method for cleaning uses the cleaning agent composition.
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