41.
    发明专利
    未知

    公开(公告)号:DE69418423T2

    公开(公告)日:1999-12-23

    申请号:DE69418423

    申请日:1994-02-28

    Abstract: A grind-machining method of ceramic materials characterized in that a peripheral speed of a grinding wheel relative to a working surface is set to 50 to 300 m/sec, a feed stroke speed of the working surface of the grinding wheel in a working direction is set to 50 to 200 m/min, and preferably, a down-feed speed (V3) of the working surface of the grinding wheel in a direction orthogonal to the surface of the workpiece is set to 0.05 to 3 mm/min. The grind-machining method of ceramic materials can reduce a grinding force at the time of grinding of ceramic materials and residual defects due to machining, and at the same time, can accomplish high machining efficiency.

    42.
    发明专利
    未知

    公开(公告)号:DE69510007T2

    公开(公告)日:1999-09-23

    申请号:DE69510007

    申请日:1995-11-13

    Abstract: A sliding part has a sliding part body, a first member made of ceramics, and a second member of a metal subjected to hardening treatment. In a production method, the first member is joined to a sliding part body by heating at a temperature of 650 DEG C or higher, and the second member made of a metal is attached to the body at a temperature lower than 650 DEG C by means which does not impair an effect of the hardening treatment. The second member has an HRC hardness of 45 or higher.

    43.
    发明专利
    未知

    公开(公告)号:DE69418423D1

    公开(公告)日:1999-06-17

    申请号:DE69418423

    申请日:1994-02-28

    Abstract: A grind-machining method of ceramic materials characterized in that a peripheral speed of a grinding wheel relative to a working surface is set to 50 to 300 m/sec, a feed stroke speed of the working surface of the grinding wheel in a working direction is set to 50 to 200 m/min, and preferably, a down-feed speed (V3) of the working surface of the grinding wheel in a direction orthogonal to the surface of the workpiece is set to 0.05 to 3 mm/min. The grind-machining method of ceramic materials can reduce a grinding force at the time of grinding of ceramic materials and residual defects due to machining, and at the same time, can accomplish high machining efficiency.

    44.
    发明专利
    未知

    公开(公告)号:DE69501638T2

    公开(公告)日:1998-07-23

    申请号:DE69501638

    申请日:1995-04-24

    Abstract: A method of producing a silicon nitride ceramic component, comprising: grinding a silicon nitride sintered body comprising alpha -Si3N4 having an average grain size of 0.5 mu m or smaller and beta '-sialon having an average grain size of 3 mu m or smaller in major axis and 1 mu m or smaller in minor axis into a predetermined size with a surface roughness of 1-7 mu m in ten-point mean roughness; heat treating the same at temperature range of 800-1200 DEG C in the air; and standing it to allow to be cooled, whereby providing a residual stress in the ground surface before and after the heat treating as a residual compressive stress at a ratio of 1 or higher of the residual compressive stress after the heat treating to that before the heat treating (residual compressive stress after the heat treating/residual compressive stress before the heat treating), preferably 5 or more.

    45.
    发明专利
    未知

    公开(公告)号:DE69600105T2

    公开(公告)日:1998-04-09

    申请号:DE69600105

    申请日:1996-05-07

    Abstract: The invention aims to offer a method to manufacture a high-strength, high-reliability and low cost silicon nitride based sintered body which is not affected by the amount of metal impurities contained in the silicon nitride powder, without using high-purity silicon nitride powder, and can be sintered for a short sintering time. The invention uses silicon nitride and sintering aids, and the powder mixture containing 500 - 5000 ppm metal impurities is sintered at temperatures ranging from 1300 - 1900 DEG CÄdegrees CÜ, and under the conditions wherein the product of sintering temperature and sintering time ranges from 1 x 10 to 10x 10 DEG C Ädegrees CÜ.seconds.

    46.
    发明专利
    未知

    公开(公告)号:DE69600105D1

    公开(公告)日:1998-01-02

    申请号:DE69600105

    申请日:1996-05-07

    Abstract: The invention aims to offer a method to manufacture a high-strength, high-reliability and low cost silicon nitride based sintered body which is not affected by the amount of metal impurities contained in the silicon nitride powder, without using high-purity silicon nitride powder, and can be sintered for a short sintering time. The invention uses silicon nitride and sintering aids, and the powder mixture containing 500 - 5000 ppm metal impurities is sintered at temperatures ranging from 1300 - 1900 DEG CÄdegrees CÜ, and under the conditions wherein the product of sintering temperature and sintering time ranges from 1 x 10 to 10x 10 DEG C Ädegrees CÜ.seconds.

    47.
    发明专利
    未知

    公开(公告)号:DE69217454D1

    公开(公告)日:1997-03-27

    申请号:DE69217454

    申请日:1992-09-08

    Abstract: A silicon nitride sintered body comprising alpha -silicon nitride including alpha '-sialon and beta '-sialon including beta -silicon nitride in which the content of the alpha -silicon nitride including alpha '-sialon in the surface part thereof is less than its content in the inner part thereof. The silicon nitride sintered body is excellent in mechanical strength at ordinary temperature, productivity and cost efficiency.

    SILICON NITRIDE SINTERED BODY AND PROCESS FOR PRODUCING THE SAME

    公开(公告)号:CA2060241A1

    公开(公告)日:1992-11-23

    申请号:CA2060241

    申请日:1992-01-29

    Abstract: The present invention relates to a silicon nitride sintered body [wherein the composition of Si3N4-first aid (Y2O3 + MgO)-second aid (at least one of Al2O3 and AlN)] falls within a range defined by lines joining points A, B, C and D in FIG. 1, the crystal phase of the sintered body contains both alpha -Si3N4 and beta '-sialon, and the relative density is 98% or more. This sintered body is produced by subjecting a green compact of the above-described source to primary sintering in a nitrogen gas atmosphere at 1300 to 1700 DEG C so that the relative density reaches 96% or more, and the precipitation ratio of the alpha -Si3N4 crystal phases to the beta '-sialon crystal phase in the sintered body is in the range of from 40 : 60 to 80 : 20; and then subjecting the primary sintered body to secondary sintering in a nitrogen gas atmosphere at 1300 to 1700 DEG C so that the relative density reaches 98% or more. The sintered body has superior strength properties, especially at ordinary temperatures, and can be produced with a high productivity in a high yield at a low cost.

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