Ohmic contact to semiconductor layer
    44.
    发明授权
    Ohmic contact to semiconductor layer 有权
    欧姆接触到半导体层

    公开(公告)号:US08969198B2

    公开(公告)日:2015-03-03

    申请号:US13909621

    申请日:2013-06-04

    Abstract: A perforating ohmic contact to a semiconductor layer in a semiconductor structure is provided. The perforating ohmic contact can include a set of perforating elements, which can include a set of metal protrusions laterally penetrating the semiconductor layer(s). The perforating elements can be separated from one another by a characteristic length scale selected based on a sheet resistance of the semiconductor layer and a contact resistance per unit length of a metal of the perforating ohmic contact contacting the semiconductor layer. The structure can be annealed using a set of conditions configured to ensure formation of the set of metal protrusions.

    Abstract translation: 提供了与半导体结构中的半导体层的穿孔欧姆接触。 穿孔欧姆接触可以包括一组穿孔元件,其可以包括横向渗透半导体层的一组金属突起。 穿孔元件可以通过基于半导体层的薄层电阻选择的特征长度刻度和接触半导体层的穿孔欧姆接触金属的每单位长度的接触电阻彼此分离。 该结构可以使用一组条件进行退火,所述条件被配置成确保形成该组金属突起。

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