公开(公告)号：US09601611B2

公开(公告)日：2017-03-21

申请号：US14333890

申请日：2014-07-17

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Mikhail Gaevski ,  Michael Shur ,  Remigijus Gaska

IPC: H01L29/778 ,  H01L29/205 ,  H01L29/06 ,  H01L29/417 ,  H01L29/20

CPC classification number: H01L29/7787 ,  H01L29/0653 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/41766 ,  H01L29/7788

Abstract: A lateral/vertical device is provided. The device includes a device structure including a device channel having a lateral portion and a vertical portion. The lateral portion of the device channel can be located adjacent to a first surface of the device structure, and one or more contacts and/or a gate can be formed on the first surface. The device structure also includes a set of insulating layers located in the device structure between the lateral portion of the device channel and a second surface of the device structure opposite the first surface. An opening in the set of insulating layers defines a transition region between the lateral portion of the device channel and a vertical portion of the device channel. A contact to the vertical portion of the device channel can be located on the second surface.

公开(公告)号：US20160118534A1

公开(公告)日：2016-04-28

申请号：US14984342

申请日：2015-12-30

Applicant: Sensor Electronic Technology, Inc.

Inventor： Michael Shur ,  Rakesh Jain ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Jinwei Yang ,  Remigijus Gaska ,  Mikhail Gaevski

IPC: H01L33/06 ,  H01L33/38 ,  H01L33/00 ,  H01L33/32

CPC classification number: H01L33/06 ,  H01L33/007 ,  H01L33/18 ,  H01L33/30 ,  H01L33/32 ,  H01L33/382 ,  H01L2224/14 ,  H01L2933/0016 ,  H01S5/3209 ,  H01S5/3413 ,  H01S5/34333

Abstract: A device comprising a semiconductor layer including a plurality of compositional inhomogeneous regions is provided. The difference between an average band gap for the plurality of compositional inhomogeneous regions and an average band gap for a remaining portion of the semiconductor layer can be at least thermal energy. Additionally, a characteristic size of the plurality of compositional inhomogeneous regions can be smaller than an inverse of a dislocation density for the semiconductor layer.

公开(公告)号：US09166048B2

公开(公告)日：2015-10-20

申请号：US14027897

申请日：2013-09-16

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Mikhail Gaevski ,  Michael Shur ,  Remigijus Gaska

IPC: H01L21/20 ,  H01L29/93 ,  H01L29/78 ,  H01L29/66 ,  H01L29/778 ,  H01L29/861 ,  H01L29/872 ,  H01L29/10 ,  H01L29/40 ,  H01L29/417 ,  H01L29/06 ,  H01L29/20 ,  H01L23/367

CPC classification number: H01L29/7838 ,  H01L23/367 ,  H01L29/0623 ,  H01L29/1087 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/41758 ,  H01L29/6609 ,  H01L29/66446 ,  H01L29/7786 ,  H01L29/7831 ,  H01L29/861 ,  H01L29/8613 ,  H01L29/872 ,  H01L29/93 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A lateral semiconductor device and/or design including a space-charge generating layer and electrode located on an opposite side of a device channel as contacts to the device channel is provided. The space-charge generating layer is configured to form a space-charge region to at least partially deplete the device channel in response to an operating voltage being applied to the contacts to the device channel.

Abstract translation: 提供了包括空间电荷产生层和位于设备通道的相对侧上的电极的横向半导体器件和/或设计，作为与器件通道的接触。 空间电荷产生层被配置为响应于施加到器件通道的触点的工作电压而形成空间电荷区域以至少部分地耗尽器件沟道。

公开(公告)号：US08969198B2

公开(公告)日：2015-03-03

申请号：US13909621

申请日：2013-06-04

Applicant: Sensor Electronic Technology, Inc.

Inventor： Mikhail Gaevski ,  Grigory Simin ,  Maxim S Shatalov ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: H01L21/44 ,  H01L21/768 ,  H01L29/20 ,  H01L29/45

CPC classification number: H01L21/768 ,  H01L21/28575 ,  H01L21/28587 ,  H01L21/28593 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/41766 ,  H01L29/452 ,  H01L33/38 ,  H01L2933/0016

Abstract: A perforating ohmic contact to a semiconductor layer in a semiconductor structure is provided. The perforating ohmic contact can include a set of perforating elements, which can include a set of metal protrusions laterally penetrating the semiconductor layer(s). The perforating elements can be separated from one another by a characteristic length scale selected based on a sheet resistance of the semiconductor layer and a contact resistance per unit length of a metal of the perforating ohmic contact contacting the semiconductor layer. The structure can be annealed using a set of conditions configured to ensure formation of the set of metal protrusions.

Abstract translation: 提供了与半导体结构中的半导体层的穿孔欧姆接触。 穿孔欧姆接触可以包括一组穿孔元件，其可以包括横向渗透半导体层的一组金属突起。 穿孔元件可以通过基于半导体层的薄层电阻选择的特征长度刻度和接触半导体层的穿孔欧姆接触金属的每单位长度的接触电阻彼此分离。 该结构可以使用一组条件进行退火，所述条件被配置成确保形成该组金属突起。

公开(公告)号：US20140077311A1

公开(公告)日：2014-03-20

申请号：US14027897

申请日：2013-09-16

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Mikhail Gaevski ,  Michael Shur ,  Remigijus Gaska

IPC: H01L29/78 ,  H01L29/66

CPC classification number: H01L29/7838 ,  H01L23/367 ,  H01L29/0623 ,  H01L29/1087 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/41758 ,  H01L29/6609 ,  H01L29/66446 ,  H01L29/7786 ,  H01L29/7831 ,  H01L29/861 ,  H01L29/8613 ,  H01L29/872 ,  H01L29/93 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A lateral semiconductor device and/or design including a space-charge generating layer and electrode located on an opposite side of a device channel as contacts to the device channel is provided. The space-charge generating layer is configured to form a space-charge region to at least partially deplete the device channel in response to an operating voltage being applied to the contacts to the device channel.

Abstract translation: 提供了包括空间电荷产生层和位于设备通道的相对侧上的电极的横向半导体器件和/或设计，作为与器件通道的接触。 空间电荷产生层被配置为响应于施加到器件通道的触点的工作电压而形成空间电荷区域以至少部分地耗尽器件沟道。