THERMAL AND STRESS ISOLATION FOR PRECISION CIRCUIT

    公开(公告)号:US20200043828A1

    公开(公告)日:2020-02-06

    申请号:US16055395

    申请日:2018-08-06

    Abstract: Described examples include microelectronic devices and integrated circuits with an active first circuit in a first segment of a first wafer, a second circuit in a second segment of the first wafer, and second and third wafers bonded to different surfaces of the first wafer to provide first and second cavities with surfaces spaced from the first segment. An opening extends through the first wafer between the first and second cavities to separate portions of the first and second segments and to form a sealed cavity that surrounds the first segment. A bridge segment of the first wafer supports the first segment in the sealed cavity and includes one or more conductive structures to electrically connect the first and second circuits.

    Vertical thermoelectric structures
    46.
    发明授权
    Vertical thermoelectric structures 有权
    垂直热电结构

    公开(公告)号:US09349933B2

    公开(公告)日:2016-05-24

    申请号:US14180744

    申请日:2014-02-14

    Abstract: A thermoelectric device is disclosed which includes metal thermal terminals protruding from a top surface of an IC, connected to vertical thermally conductive conduits made of interconnect elements of the IC. Lateral thermoelectric elements are connected to the vertical conduits at one end and heatsinked to the IC substrate at the other end. The lateral thermoelectric elements are thermally isolated by interconnect dielectric materials on the top side and field oxide on the bottom side. When operated in a generator mode, the metal thermal terminals are connected to a heat source and the IC substrate is connected to a heat sink. Thermal power flows through the vertical conduits to the lateral thermoelectric elements, which generate an electrical potential. The electrical potential may be applied to a component or circuit in the IC. The thermoelectric device may be integrated into an IC without adding fabrication cost or complexity.

    Abstract translation: 公开了一种热电装置,其包括从IC的顶表面突出的金属热端子,其连接到由IC的互连元件制成的垂直导热导管。 侧向热电元件在一端连接到垂直导管,并在另一端与IC基板相互散热。 侧向热电元件通过顶侧的互连电介质材料和底侧的场氧化物热隔离。 当在发电机模式下工作时,金属热端子连接到热源,并且IC基板连接到散热器。 热功率流过垂直管道到横向热电元件,产生电位。 电位可以施加到IC中的元件或电路。 热电装置可以集成到IC中而不增加制造成本或复杂性。

    VERTICAL THERMOELECTRIC STRUCTURES
    47.
    发明申请
    VERTICAL THERMOELECTRIC STRUCTURES 审中-公开
    垂直热电结构

    公开(公告)号:US20140216517A1

    公开(公告)日:2014-08-07

    申请号:US14180744

    申请日:2014-02-14

    Abstract: A thermoelectric device is disclosed which includes metal thermal terminals protruding from a top surface of an IC, connected to vertical thermally conductive conduits made of interconnect elements of the IC. Lateral thermoelectric elements are connected to the vertical conduits at one end and heatsinked to the IC substrate at the other end. The lateral thermoelectric elements are thermally isolated by interconnect dielectric materials on the top side and field oxide on the bottom side. When operated in a generator mode, the metal thermal terminals are connected to a heat source and the IC substrate is connected to a heat sink. Thermal power flows through the vertical conduits to the lateral thermoelectric elements, which generate an electrical potential. The electrical potential may be applied to a component or circuit in the IC. The thermoelectric device may be integrated into an IC without adding fabrication cost or complexity.

    Abstract translation: 公开了一种热电装置,其包括从IC的顶表面突出的金属热端子,其连接到由IC的互连元件制成的垂直导热导管。 侧向热电元件在一端连接到垂直导管,并在另一端与IC基板相互散热。 侧向热电元件通过顶侧的互连电介质材料和底侧的场氧化物热隔离。 当在发电机模式下工作时,金属热端子连接到热源,并且IC基板连接到散热器。 热功率流过垂直管道到横向热电元件,产生电位。 电位可以施加到IC中的元件或电路。 热电装置可以集成到IC中而不增加制造成本或复杂性。

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