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公开(公告)号：US11011815B2
公开(公告)日：2021-05-18
申请号：US16393809
申请日：2019-04-24
Applicant: Texas Instruments Incorporated
Inventor： Hassan Omar Ali , Juan Alejandro Herbsommer , Benjamin Cook , Swaminathan Sankaran
Abstract: A wave communication system includes an integrated circuit and a multilayered substrate. The multilayered substrate is electrically coupled to the integrated circuit. The multilayered substrate includes an antenna structure configured to transmit a circularly polarized wave in response to signals from the integrated circuit.
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公开(公告)号：US20190139868A1
公开(公告)日：2019-05-09
申请号：US15808537
申请日：2017-11-09
Applicant: Texas Instruments Incorporated
Inventor： Robert Allan Neidorff , Benjamin Cook , Steven Alfred Kummerl , Barry Jon Male , Peter Smeys
IPC: H01L23/495 , H01L23/485
Abstract: Semiconductor devices and methods and apparatus to produce such semiconductor devices are disclosed. An integrated circuit package includes a lead frame including a die attach pad and a plurality of leads; a die including a MEMs region defined by a plurality of trenches, the die electrically connected to the plurality of leads; and a mold compound covering portions of the die, the mold compound defining a cavity between a surface of the die and a surface of the mold compound, wherein the mold compound defines a vent.
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公开(公告)号：US12054385B2
公开(公告)日：2024-08-06
申请号：US17388301
申请日：2021-07-29
Applicant: Texas Instruments Incorporated
Inventor： Ting-Ta Yen , Jeronimo Segovia-Fernandez , Ricky Alan Jackson , Benjamin Cook
IPC: B81B7/00
CPC classification number: B81B7/0048 , B81B2201/0271 , B81B2203/033
Abstract: A semiconductor system includes a substrate. The substrate has a front side and a back side. A device is formed on the front side of the substrate. A vertical spring is etched in the substrate about the device. A trench is etched in the front side of the substrate about the device. A wall of the trench forms a side of the vertical spring.
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公开(公告)号：US10374621B2
公开(公告)日：2019-08-06
申请号：US15366335
申请日：2016-12-01
Applicant: Texas Instruments Incorporated
Inventor： Juan Herbsommer , Benjamin Cook , S. Josh Jacobs
Abstract: A chip scale vapor cell and millimeter wave atomic clock apparatus are disclosed. The chip scale vapor cell includes a first substrate and a second substrate bonded to the first substrate with a bonding material. A primary hermetic cavity includes a first bottom wall and first sidewalls formed in the first substrate and a first top wall formed by the lower surface of the second substrate. A secondary hermetic cavity includes a second bottom wall and second sidewalls formed in the first substrate and a second top wall formed by the lower surface of the second substrate. The secondary hermetic cavity is separate from the primary hermetic cavity and surrounds the perimeter of the primary hermetic cavity. A gas, which can be a dipolar molecular gas, is sealed in the primary hermetic cavity and the secondary hermetic cavity at a given initial pressure.
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公开(公告)号：US20180197830A1
公开(公告)日：2018-07-12
申请号：US15913497
申请日：2018-03-06
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Barry Jon Male, IV , Benjamin Cook , Robert Alan Neidorff , Steve Kummerl
Abstract: In described examples of forming an integrated circuit wave device, a method includes: (a) affixing an integrated circuit die relative to a substrate; (b) creating a form relative to the integrated circuit die and the substrate; and (c) forming a wave shaping member having a shape conforming at least in part to a shape of the form.
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Patent Agency Ranking
公开(公告)号：US20180159547A1
公开(公告)日：2018-06-07
申请号：US15366335
申请日：2016-12-01
Applicant: Texas Instruments Incorporated
Inventor： Juan Herbsommer , Benjamin Cook , S. Josh Jacobs
CPC classification number: H03L7/26 , H01L24/06 , H01L24/46 , H01L24/83 , H01L29/0649 , H01L2224/11 , H01L2224/48091 , H01L2924/00014
Abstract: A chip scale vapor cell and millimeter wave atomic clock apparatus are disclosed. The chip scale vapor cell includes a first substrate and a second substrate bonded to the first substrate with a bonding material. A primary hermetic cavity includes a first bottom wall and first sidewalls formed in the first substrate and a first top wall formed by the lower surface of the second substrate. A secondary hermetic cavity includes a second bottom wall and second sidewalls formed in the first substrate and a second top wall formed by the lower surface of the second substrate. The secondary hermetic cavity is separate from the primary hermetic cavity and surrounds the perimeter of the primary hermetic cavity. A gas, which can be a dipolar molecular gas, is sealed in the primary hermetic cavity and the secondary hermetic cavity at a given initial pressure.
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公开(公告)号：US09761543B1
公开(公告)日：2017-09-12
申请号：US15385098
申请日：2016-12-20
Applicant: Texas Instruments Incorporated
Inventor： Barry Jon Male , Benjamin Cook , Robert Alan Neidorff , Steve Kummerl
IPC: H01L23/00 , H01L23/38 , H01L23/495 , H01L23/31 , H01L23/34 , H01L23/498 , H01L27/02
CPC classification number: H01L23/562 , H01L23/3107 , H01L23/315 , H01L23/345 , H01L23/38 , H01L23/49513 , H01L23/49541 , H01L23/49861 , H01L27/0248 , H01L35/32 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48465 , H01L2924/00014 , H01L2924/14 , H01L2924/181 , H01L2224/45099 , H01L2924/00012
Abstract: Integrated circuits with a molded package including a cavity and a semiconductor die spaced from an interior surface of the molded package within the cavity. The semiconductor die includes one or more electrical components, a thermal control component to control the temperature of the electrical component, and a driver to provide a current or voltage signal to the thermal control component at least partially according to a setpoint signal.
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公开(公告)号：US20170197823A1
公开(公告)日：2017-07-13
申请号：US15134574
申请日：2016-04-21
Applicant: Texas Instruments Incorporated
Inventor： Kurt Peter Wachtler , Makoto Yoshino , Ayumu Kuroda , Brian E. Goodlin , Karen Kirmse , Benjamin Cook , Genki Yano , Stuart Jacobsen
CPC classification number: B81B7/0048 , B81B7/0054 , B81B2207/012 , B81B2207/097 , B81B2207/99 , B81C1/00325 , B81C2203/0136 , B81C2203/0154 , H01L23/3107 , H01L23/3135 , H01L23/49541 , H01L2224/32145 , H01L2224/48091 , H01L2224/48145 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
Abstract: A packaged micro-electro-mechanical system (MEMS) device (100) comprises a circuitry chip (101) attached to the pad (110) of a substrate with leads (111), and a MEMS (150) vertically attached to the chip surface by a layer (140) of low modulus silicone compound. On the chip surface, the MEMS device is surrounded by a polyimide ring (130) with a surface phobic to silicone compounds. A dome-shaped glob (160) of cured low modulus silicone material covers the MEMS and the MEMS terminal bonding wire spans (180); the glob is restricted to the chip surface area inside the polyimide ring and has a surface non-adhesive to epoxy-based molding compounds. A package (190) of polymeric molding compound encapsulates the vertical assembly of the glob embedding the MEMS, the circuitry chip, and portions of the substrate; the molding compound is non-adhering to the glob surface yet adhering to all other surfaces.
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公开(公告)号：US20160218175A1
公开(公告)日：2016-07-28
申请号：US14701484
申请日：2015-04-30
Applicant: Texas Instruments Incorporated
Inventor： Dan Carothers , Rajarshi Mukhopadhyay , Paul Brohlin , Benjamin Cook
IPC: H01L29/06 , H01L23/528 , H01L21/683 , H01L21/8234 , H01L21/02 , H01L21/78 , H01L23/522 , H01L21/762
CPC classification number: H01L21/6835 , H01L21/02282 , H01L21/02288 , H01L21/31053 , H01L21/76224 , H01L21/78 , H01L21/823481 , H01L23/5223 , H01L23/528 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381 , H01L2224/13 , H01L2924/0002 , H01L2924/00
Abstract: A semiconductor device is formed on a semiconductor substrate, including a primary portion of the substrate. An active component of the semiconductor device is disposed in the primary portion of the substrate. An interconnect region is formed on a top surface of the substrate. Semiconductor material is removed from the substrate in an isolation region, which is separate from the primary portion of the substrate; the isolation region extends from the top surface of the substrate to a bottom surface of the substrate. A dielectric replacement material is formed in the isolation region. The semiconductor device further includes an isolated component which is not disposed in the primary portion of the substrate. The dielectric replacement material in the isolation region separates the isolated component from the primary portion of the substrate.
Abstract translation: 半导体器件形成在包括衬底的主要部分的半导体衬底上。 半导体器件的有源部件设置在基板的主要部分中。 在衬底的顶表面上形成互连区。 在与衬底的主要部分分离的隔离区域中从衬底去除半导体材料; 隔离区域从衬底的顶表面延伸到衬底的底表面。 电介质替代材料形成在隔离区域中。 半导体器件还包括未设置在基板的主要部分中的隔离部件。 隔离区域中的电介质替代材料将隔离的部件与基板的主要部分分离。
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公开(公告)号：US11296016B2
公开(公告)日：2022-04-05
申请号：US15808537
申请日：2017-11-09
Applicant: Texas Instruments Incorporated
Inventor： Robert Allan Neidorff , Benjamin Cook , Steven Alfred Kummerl , Barry Jon Male , Peter Smeys
IPC: H01L23/495 , H01L23/485 , H01L23/31 , B81C1/00
Abstract: Semiconductor devices and methods and apparatus to produce such semiconductor devices are disclosed. An integrated circuit package includes a lead frame including a die attach pad and a plurality of leads; a die including a MEMs region defined by a plurality of trenches, the die electrically connected to the plurality of leads; and a mold compound covering portions of the die, the mold compound defining a cavity between a surface of the die and a surface of the mold compound, wherein the mold compound defines a vent.
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