Abstract:
PROBLEM TO BE SOLVED: To provide a pattern forming method with which a fine pattern formed by applying a side wall leaving process is efficiently and easily formed. SOLUTION: An endmost pattern 3a among a plurality of integrated circuit patterns 3 is selected. A first closest pattern 3b which is closest to the endmost pattern 3a is extracted from the respective integrated circuit patterns 3. A pattern 4 is generated which is circumscribed with the endmost pattern 3a and first closest pattern 3b. A non-overlap pattern 5 excluding portions overlapping with the endmost pattern 3a and first closest pattern 3b is generated from the circumscribed pattern 4. A second closest pattern 6 which is closest to the non-overlap pattern 5 is extracted from the respective integrated circuit patterns 3. Steps from the one of extracting the first closest pattern 3b from a second layer to the one of extracting the second closest pattern 6 are repeated until all the data of the respective integrated circuit patterns 3 are completely followed. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To obtain a step management method for management from a viewpoint of a step proximity effect. SOLUTION: The method includes: a step of selecting a prescribed drawing data corresponding to a prescribed repetition pattern from the drawing data corresponding to a pattern group for modeling comprising a plurality of repetition patterns obtained by changing a first dimension defining a basic pattern of the repetition pattern and a second dimension defining the repetition of the basic pattern with respect to the drawing data corresponding to the repetition pattern, the basic pattern of the prescribed repetition pattern corresponding to a pattern which is to be formed on a wafer and has a prescribed dimension; and a step of judging whether or not a dimension difference between an actual dimension of a portion of a photomask corresponding to the prescribed drawing data and a target dimension falls in an allowable range in a photomask manufacturing step, whether or not a dimensional difference between an actual dimension of a portion of a photoresist corresponding to the prescribed drawing data and a target dimension falls in an allowable range in a lithography step, and whether or not a dimension difference between an actual dimension of a portion of pattern on the wafer corresponding to the prescribed drawing data and a target dimension falls in an allowable range in a processing step. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a method for creating pattern data for easily forming a complicated repetitive pattern. SOLUTION: The method for creating the pattern data includes: (S2) creating first correction models Ci (i= 1, 2...) with respect to the design pattern data corresponding to a repetitive pattern to be formed on a wafer; (S3) creating correction pattern data Di (i= 1, 2...) by correcting the design pattern data by using the first correction models Ci; (S4) creating masks Mi (i= 1, 2...) by using the correction pattern data Di; (S5) forming repetitive patterns Pi (i= 1, 2...) on the wafer by using the masks Mi or drawing data Ei; (S6) selecting a repetitive pattern with highest fidelity to the design pattern data from the repetitive patterns Pi; (S7) correcting the first correction model Ci corresponding to the selected repetitive pattern to create a second correction model; and (S8) correcting the design pattern data by using the second correction model. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To flexibly perform correspondence, in response to the change of a distribution group with a simple configuration, and without requiring a large scale of configuration, such as a server device. SOLUTION: A communication apparatus 100 generates group information by a multicast group management 11, based on destination information designated by a user. A multicast address generator 12 generates a multicast address, based on the group information. When the communication apparatus 100 is at a transmission side, a network I/F 13 adds the generated multicast address to data and transmits it to a network NW. When a communication apparatus 200 at a reception side, a network I/F 23 is indicated to receive data to the generated multicast address. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a multicast communication system capable of reducing an amount of routing information for multicast communication thereby capable of preventing resources from being pressed. SOLUTION: The multicast communication system including means for managing in advance replacement address information of sender node apparatuses regarded to be located at an equivalent distance from a network, replace a sender IP address of a multicast packet with a replacement IP address when monitoring transmission of the multicast packet and detecting it. Thus, a data amount of multicast routing table in each router can be decreased and it is possible to suppress a resource consumed amount of each router. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of reducing a process conversion difference caused upon an etching process. SOLUTION: The method for manufacturing the semiconductor device contains the steps of forming a resist pattern 2P containing a pattern on a film 1 to be processed, changing a size of the pattern, and etching the film 1 to be processed by using the resist pattern 2P in which the size of the pattern is changed as a mask. In the step of changing the size of the pattern, the change amount of the size of the pattern is decided so that the pattern which is composed of the film 1 to be processed corresponding to the pattern which is formed by the step of etching the film 1 to be processed has a desired dimension. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a method for creating design pattern data to reduce the TAT (turn around time). SOLUTION: The method for creating design pattern data includes: a step S1 of creating first mask pattern data based on first design pattern data; a step S5 of predicting a first wafer pattern to be formed on a wafer corresponding to the first mask pattern data based on the first mask pattern data; a step S6 of judging whether the difference between the first wafer pattern and first design pattern corresponding to the first design pattern data is within a preliminarily determined permissible variation amount or not; a step S7 of correcting the first design pattern data in a part corresponding to the difference if the difference is out of the permissible variation amount; and a step S10 of synthesizing the data obtained by eliminating the first design pattern data of the part corresponding to the corrected difference from the first design pattern data, with the first design pattern data in the part corresponding to the corrected difference, to create second design pattern data. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To allow communications between terminals involved in different networks while mobility is secured. SOLUTION: A mobile IP (Internet Protocol) network capable of implementing communications even if the terminal moves in the network by a Mobile IP system is assigned as a higher rank network (network C). A non-Mobile IP network capable of implementing the communications even if the terminal moves in the network by another system rather than the Mobile IP system is assigned as lower rank networks (networks A, B). Linking devices 20, 22 allowed to function as the terminal complying with the Mobile IP system with respect to the higher rank network and allowed to function as the terminals complying with another system rather than the Mobile IP system with respect to the lower rank networks are arranged between the higher rank network and the lower rank networks. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a method for modifying a defective part of a mask by which efficiency in a step for modifying a defective part of a mask is enhanced and lowering of yield in the step is easily suppressed. SOLUTION: Respective pattern transfer images 17, 18 are simulated using defect data 15 formed on the basis of a mask image around a defect in a mask 2 and reference data 16 corresponding to the mask image in design data for fabrication of the mask 2. Dislocation of the defective simulated image 17 based on the defect data 15 from the reference simulated image 18 based on the reference data 16 is checked and whether it is necessary to modify the defective part or not is judged. When it is necessary to modify the defective part, the range of permissible error in relation to an ideal transfer simulated image is simulated using the reference data 16 and the range is compared with the mask image. A part corresponding to the region of any mask image outside the range of permissible error is modified. COPYRIGHT: (C)2004,JPO
Abstract:
PROBLEM TO BE SOLVED: To correct a design pattern to a shape suited to mask plotting or inspection by simple processing. SOLUTION: In a pattern correcting method to be executed by a computer, 1st correction for sides satisfying a prescribed condition out of sides constituting a designed pattern is performed by calculating correction values obtained considering an optical proximity effect. Then 2nd correction for sides not satisfying the prescribed condition is performed by using the correction value of the side adjacent to the side not satisfying the prescribed condition out of the sides corrected by the 1st correction and the sides corrected by the 1st correction are connected to each other with a segment. COPYRIGHT: (C)2003,JPO