公开(公告)号：JPH0798502A

公开(公告)日：1995-04-11

申请号：JP24282793

申请日：1993-09-29

Applicant: TOSOH CORP

Inventor： TSUTSUMI YOSHITAKA ,  TANAKA TETSUO ,  MIYAMURA HIROYUKI ,  HASEGAWA MASAZUMI

IPC: G03F7/004 ,  G02B1/04 ,  G02B5/20 ,  G03F7/022 ,  G03F7/023

Abstract: PURPOSE:To provide a photosensitive material having satisfactory appliability on a stepped part and used at the time of producing a solid-state image pickup element, a liq. crystal element, etc. CONSTITUTION:This photosensitive material for a stepped substrate consists of an alkali-soluble resin, a photosensitive agent, a heat curing agent and a solvent based on a mixture of a solvent selected from among alkyl lactate, alkyl alkoxypropionate, propylene glycol monoalkyl ether and propylene glycol monoalkyl ether acetate with an acetic ester solvent having

公开(公告)号：JPH0764289A

公开(公告)日：1995-03-10

申请号：JP21161993

申请日：1993-08-26

Applicant: TOSOH CORP

Inventor： TSUTSUMI YOSHITAKA ,  TANAKA TETSUO ,  MIYAMURA HIROYUKI ,  HASEGAWA MASAZUMI

IPC: G02B1/04 ,  G03F7/004 ,  G03F7/022 ,  G03F7/023 ,  G03F7/039

Abstract: PURPOSE:To ensure satisfactory appliability on a rugged surface by using a mixture of alkyl lactate with propylene glycol monoalkyl ether as the base of a solvent. CONSTITUTION:This photosensitive compsn. consists of an alkali-soluble resin, 1,2-naphthoquinonediazidosulfonic ester as a photosensitive agent, a thermosetting agent which imparts heat and chemical resistances under heating after patterning and a solvent based on a mixture of alkyl lactate with propylene glycol monoalkyl ether. Methyl lactate, ethyl lactate or butyl lactate may be used as the alkyl lactate and propylene glycol monomethyl ether or propylene glycol monoethyl ether may be used as the propylene glycol monoalkyl ether.

公开(公告)号：JPH06148888A

公开(公告)日：1994-05-27

申请号：JP29320092

申请日：1992-10-30

Applicant: TOSOH CORP

Inventor： TSUTSUMI YOSHITAKA ,  KAMIMURA TERUHISA ,  HASEGAWA MASAZUMI

IPC: G02B5/20 ,  G03F7/004 ,  G03F7/039

Abstract: PURPOSE:To obtain a color filter pattern of high resolution and to shorter processes and to obtain a thin film by using a positive photosensitive material consisting of thermosetting agent, dye, and photosensitive agent consisting of alkali soluble resin and 1,2-naphthoquinonediazide sulfonate. CONSTITUTION:This positive photosensitive material to form a color filter consists of polymer, photosensitive agent, thermosetting agent, dye, and solvent. The polymer used is an alkali-soluble resin. The photosensitive agent is 1,2- naphthoquinonediazide sulfonate. The thermosetting agent is such a compd. that can give heat resistance and solvent resistance to the photosensitive material by heat treatment after patterning. The alkali-soluble resin is not limited as far as it is soluble with a solvent and can form a film. It is preferable that the alkali-soluble resin is a vinylphenol polymer or novolac resin which is polymer condensate of phenols and aldehydes with addition of hydrogen and/or partly modified hydroxyl groups so that the resin maintains its transparency when heated again.

公开(公告)号：JPH05202228A

公开(公告)日：1993-08-10

申请号：JP20434192

申请日：1992-07-09

Applicant: TOSOH CORP

Inventor： MATSUMURA KOUZABUROU ,  AKASHI MITSUMASA ,  TSUTSUMI YOSHITAKA ,  HASEGAWA MASAZUMI

IPC: C08K5/00 ,  C08L101/00 ,  C09D7/12 ,  C09D201/00 ,  H01L21/312

Abstract: PURPOSE:To obtain a leveling material having excellent heat resistance, good transparency, etc., in leveling an irregular substrate necessary in a process for producing a solid-state image pickup device, a liquid crystal display element, etc., by combining a resin having a limited service temperature in the leveling step with a specified heat curing agent. CONSTITUTION:The title material comprises a resin whose service temperature in the leveling step can be set below 200 deg.C and a melamine heat curing agent and/or an epoxy heat curing agent. This material is desirably one wherein the resin is an acrylic resin comprising structural units of formula I [wherein R1, R2 and R3 are each hydrogen or methyl; A1, A2 and A3 are each OB1 or NB2B3 (wherein B1 to B3 are each hydrogen, 1-6C alkyl or the like); x, y and z satisfy the relationships: 0

公开(公告)号：JPH0311350A

公开(公告)日：1991-01-18

申请号：JP14528289

申请日：1989-06-09

Applicant: TOSOH CORP

Inventor： TSUTSUMI YOSHITAKA ,  TANAKA TETSUO ,  FUKAMACHI MASATO ,  HASEGAWA MASAZUMI

IPC: G03F7/038 ,  H01L21/027

Abstract: PURPOSE:To provide the negative type coating film material which is transparent in a visible light region, is resistant to dry etching and is excellent in sensitivity and resolution by using a polymer having an arom. ring for a base polymer, giving a substituent having an unsatd. group to this arom. ring and using an additive. CONSTITUTION:The coating film material consists of the rein contg. the structural unit in which R in formula I consists of the group contg. unsatd. double bonds and the additive. In the formula, A denotes a benzene ring and/or naphthalene ring; B denotes H, 1 to 4C alkyl group. The negative type photosensitive coating film material consisting of the resin having the unsatd. group in the arom. ring and the additive is transparent in the visible light region, is extremely little in the influence of oxygen faults at the time of exposing, is resistant to dry etching and has the high sensitivity and the resist function excellent in the resolution and, therefore, this material is adequate as a coating material and a smoothing resin to be used for solid-state image pickup elements and semiconductor integrated circuit element etc.

公开(公告)号：JPH0311349A

公开(公告)日：1991-01-18

申请号：JP14528189

申请日：1989-06-09

Applicant: TOSOH CORP

Inventor： TSUTSUMI YOSHITAKA ,  TANAKA TETSUO ,  FUKAMACHI MASATO ,  HASEGAWA MASAZUMI

IPC: G03F7/038 ,  H01L21/027

Abstract: PURPOSE:To provide the negative type photosensitive resin compsn. which is transparent in a visible light region, is resistant to dry etching and is excellent in sensitivity and resolution by using a polymer having an arom. ring for a base polymer, giving a substituent having an unsatd. group to this arom. ring and using an additive of a bisazide system. CONSTITUTION:The resin compsn. consists of the resin contg. the structural unit in which R in formula I consists of the group contg. unsatd. double bonds and the additive. In the formula, A denotes a benzene ring and/or naphthalene ring; B denotes H, 1 to 4C alkyl group. The negative type photosensitive resin compsn. consisting of the resin having the unsatd. group in the arom. ring and the bisazide compd. is transparent in the visible light region, is resistant to dry etching and has the high sensitivity and the resist function excellent in the resolution. This resin is adequate as a coating material and a smoothing resin to be used for solid-state image pickup elements and semiconductor integrated circuit element, etc.

公开(公告)号：JPH02110114A

公开(公告)日：1990-04-23

申请号：JP26286288

申请日：1988-10-20

Applicant: TOSOH CORP

Inventor： TSUTSUMI YOSHITAKA ,  MATSUMURA KOUZABUROU ,  MURANAKA KAZUAKI ,  HASEGAWA MASAZUMI

IPC: G03F7/039 ,  C08F16/38 ,  C08F216/36 ,  C08L29/00 ,  C08L29/12

Abstract: PURPOSE:To improve the sensitivity to radiation and the resolution in forming resist patterns, for example, by electron beam lithography, by using a halogenated vinyl ketone polymer represented by a specific structural formula as a resist martial. CONSTITUTION:A halogenated vinyl ketone polymer represented by the formula is used as a resist material. In the formula, A is structural unit derived from a monomer having a copolymerizable double bond; X is chlorine or a methyl group; R is a 1-5C fluorine-substituted alkyl group; m is a positive integer; n is 0 or a positive integer; and n/m is 0-2, preferably 0-1. This polymer is obtained by polymerizing the corresponding vinyl ketone monomer. The polymerization process can be selected from radical polymerization and anionic polymerization, and bulk polymerization, solution polymerization, emulsion polymerization, and the like are applicable. The degree of polymerization of the polymer is preferably 20-20,000.

公开(公告)号：JPH0259553A

公开(公告)日：1990-02-28

申请号：JP21058588

申请日：1988-08-26

Applicant: TOSOH CORP

Inventor： TSUTSUMI YOSHITAKA ,  FUKAMACHI MASATO ,  SAKURAI IKUO ,  KAMIMURA TERUHISA ,  HASEGAWA MASAZUMI

IPC: G03F7/022 ,  C07C327/48

Abstract: NEW MATERIAL:A compound expressed by formula I [R1 is H or 1-4C alkyl; R2 is 1-4C alkyl, 3-12C cycloalkyl or formula II (n is 0-5); A and B are H, 1-4C alkyl, 1-4C alkoxyl or halogen; D is 1,2-benzoquinone, diazide-4-sulfonyl or 1,2-naphthoquinone diazide4(or 5)-sulfonyl, etc.; m is 1-5]. EXAMPLE:1,2-naphthoquinone diazide-5-sulfonate (triester compound) of N-methyl- N-(3,4,5-trihydroxythiobenz)anilide. USE:Useful for production of integrated circuit element of semiconductor, forming positive-type photoresist together with alkali-soluble resin. PREPARATION:Polyhydroxybenzamide is modified to corresponding thioamide and hydroxyl group of said compound is esterified using 1,2-naphthoquinone diazide-4-sulfonyl chloride, etc., to obtain the compound expressed by formula I.

公开(公告)号：JPH0240353A

公开(公告)日：1990-02-09

申请号：JP18682788

申请日：1988-07-28

Applicant: TOSOH CORP

Inventor： TSUTSUMI YOSHITAKA ,  KAMIMURA TERUHISA ,  HASEGAWA MASAZUMI

IPC: G03F7/022 ,  C07C309/76

Abstract: NEW MATERIAL:The compound of formula (R is 1-4C alkyl; A and B are H, halogen, 1-4C alkyl or 1-4C alkoxy; D is 1,2-naphtoquinone-diazido-4-sulfonyl, 1,2-benzoquinonediazido-4-sulfonyl, H, etc., provided that at least one of D is not H; n is 1-5). USE:A positive-type photoresist composition. A positive-type photoresist having excellent sensitivity, resolution, heat-resistance and pattern form and exhiviting good performance to g-line or i-line light source can be produced by using the compound together with an alkali-soluble resin. PREPARATION:The compound of formula can be produced by esterifying the hydroxyl group of a polyhydroxybenzoic acid amide with 1,2- naphthoquinonediazido-4-sulfonyl chloride, etc., in the presence of a base (e.g., KOH).

公开(公告)号：JPH0240352A

公开(公告)日：1990-02-09

申请号：JP18682688

申请日：1988-07-28

Applicant: TOSOH CORP

Inventor： TSUTSUMI YOSHITAKA ,  KAMIMURA TERUHISA ,  HASEGAWA MASAZUMI

IPC: G03F7/022 ,  C07C309/76

Abstract: NEW MATERIAL:The compound of formula (A is phenylene, naphthalene, etc.; X is halogen or 1-4C halogen-substituted alkyl; Ra is H, OH, etc.; D is 1,2- naphthoquinonediazido-5-sulfonyl, 1,2-benzoquinone-diazide-4-sulfonyl, etc.; n is 1-5). EXAMPLE:1,2-Naphthoquinonediazido-5-sulfonic acid ester of m-chlorophenyl 3,4,5-trihydroxybenzoate. USE:Usable as a positive-type photo-resist forming a pattern having excellent resolution in high sensitivity and suitable for the production of a semiconductor integrated circuit element such as VLSI. PREPARATION:The compound of formula can be produced by converting a polyhydroxybenzoic acid to an acid chloride with thionyl chloride, etc., reacting with a phenol, naphthol, etc., containing a halogen, etc., treating with an alkali to form an aryl ester and reacting the product with 1,2-naphthoquinone-diazide-5- sulfonyl chloride, etc.