公开(公告)号：US11804544B2

公开(公告)日：2023-10-31

申请号：US17575655

申请日：2022-01-14

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shin-Chuan Huang ,  Chih-Tung Yeh ,  Chun-Ming Chang ,  Bo-Rong Chen ,  Wen-Jung Liao ,  Chun-Liang Hou

IPC: H01L29/778 ,  H01L29/66 ,  H01L21/265 ,  H01L29/205 ,  H01L29/20 ,  H01L29/207 ,  H01L29/423 ,  H01L29/417 ,  H01L21/28

CPC classification number: H01L29/7786 ,  H01L21/26546 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/207 ,  H01L29/66462 ,  H01L21/2654 ,  H01L21/28264 ,  H01L29/41766 ,  H01L29/4236

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a barrier layer on the buffer layer; forming a hard mask on the barrier layer; performing an implantation process through the hard mask to form a doped region in the barrier layer and the buffer layer; removing the hard mask and the barrier layer to form a first trench; forming a gate dielectric layer on the hard mask and into the first trench; forming a gate electrode on the gate dielectric layer; and forming a source electrode and a drain electrode adjacent to two sides of the gate electrode.

公开(公告)号：US20230335614A1

公开(公告)日：2023-10-19

申请号：US18215787

申请日：2023-06-28

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Ming Chang ,  Che-Hung Huang ,  Wen-Jung Liao ,  Chun-Liang Hou ,  Chih-Tung Yeh

IPC: H01L29/66 ,  H01L29/778 ,  H01L21/308 ,  H01L29/20 ,  H01L29/205

CPC classification number: H01L29/66462 ,  H01L29/7787 ,  H01L21/3081 ,  H01L29/2003 ,  H01L29/205

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a second barrier layer on the first barrier layer; forming a first hard mask on the second barrier layer; removing the first hard mask and the second barrier layer to form a recess; and forming a p-type semiconductor layer in the recess.

公开(公告)号：US20230290839A1

公开(公告)日：2023-09-14

申请号：US18199359

申请日：2023-05-18

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chih-Tung Yeh ,  Chun-Liang Hou ,  Wen-Jung Liao ,  Chun-Ming Chang ,  Yi-Shan Hsu ,  Ruey-Chyr Lee

IPC: H01L29/417 ,  H01L29/778 ,  H01L29/66

CPC classification number: H01L29/4175 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/0684

Abstract: A high electron mobility transistor includes a substrate, a mesa structure disposed on the substrate, a passivation layer disposed on the mesa structure, and at least a contact structure disposed in the passivation layer and the mesa structure. The mesa structure includes a channel layer, a barrier layer on the channel layer, two opposite first edges extending along a first direction, and two opposite second edges extending along a second direction. The contact structure includes a body portion and a plurality of protruding portions. The body portion penetrates through the passivation layer. The protruding portions penetrate through the barrier layer and a portion of the channel layer. In a top view, the body portion overlaps the two opposite first edges of the mesa structure without overlapping the two opposite second edges of the mesa structure.

公开(公告)号：US11735644B2

公开(公告)日：2023-08-22

申请号：US17551149

申请日：2021-12-14

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Ming Chang ,  Che-Hung Huang ,  Wen-Jung Liao ,  Chun-Liang Hou ,  Chih-Tung Yeh

IPC: H01L29/66 ,  H01L29/778 ,  H01L21/308 ,  H01L29/205 ,  H01L29/20

CPC classification number: H01L29/66462 ,  H01L21/3081 ,  H01L29/7787 ,  H01L29/2003 ,  H01L29/205

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a second barrier layer on the first barrier layer; forming a first hard mask on the second barrier layer; removing the first hard mask and the second barrier layer to form a recess; and forming a p-type semiconductor layer in the recess.

公开(公告)号：US20220293780A1

公开(公告)日：2022-09-15

申请号：US17827783

申请日：2022-05-29

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Ming Chang ,  Wen-Jung Liao

IPC: H01L29/778 ,  H01L21/3105 ,  H01L23/31 ,  H01L29/66

Abstract: The present invention provides a method of forming an insulating structure of a high electron mobility transistor (HEMT), firstly, a gallium nitride layer is formed, next, an aluminum gallium nitride layer is formed on the gallium nitride layer, then, a first patterned photoresist layer is formed on the aluminum gallium nitride layer, and a groove is formed in the gallium nitride layer and the aluminum gallium nitride layer, next, an insulating layer is formed and filling up the groove. Afterwards, a second patterned photoresist layer is formed on the insulating layer, wherein the pattern of the first patterned photoresist layer is complementary to the pattern of the second patterned photoresist layer, and part of the insulating layer is removed, then, the second patterned photoresist layer is removed, and an etching step is performed on the remaining insulating layer to remove part of the insulating layer again.

公开(公告)号：US20220278222A1

公开(公告)日：2022-09-01

申请号：US17745841

申请日：2022-05-16

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Ming Chang ,  Che-Hung Huang ,  Wen-Jung Liao ,  Chun-Liang Hou

IPC: H01L29/66 ,  H01L29/778

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a first hard mask on the first barrier layer; removing the first hard mask and the first barrier layer to form a recess; forming a second barrier layer in the recess; and forming a p-type semiconductor layer on the second barrier layer.

公开(公告)号：US11380786B2

公开(公告)日：2022-07-05

申请号：US16519008

申请日：2019-07-23

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Ming Chang ,  Wen-Jung Liao

IPC: H01L29/778 ,  H01L21/3105 ,  H01L23/31 ,  H01L29/66

Abstract: An insulating structure of a high electron mobility transistor (HEMT) is provided, which comprises a gallium nitride layer, an aluminum gallium nitride layer disposed on the gallium nitride layer, a groove disposed in the gallium nitride layer and the aluminum gallium nitride layer, an insulating layer disposed in the groove, wherein a top surface of the insulating layer is aligned with a top surface of the aluminum gallium nitride layer, and a passivation layer, disposed on the aluminum gallium nitride layer and the insulating layer.

公开(公告)号：US20220109058A1

公开(公告)日：2022-04-07

申请号：US17551149

申请日：2021-12-14

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Ming Chang ,  Che-Hung Huang ,  Wen-Jung Liao ,  Chun-Liang Hou ,  Chih-Tung Yeh

IPC: H01L29/66 ,  H01L29/778 ,  H01L21/308 ,  H01L29/205 ,  H01L29/20

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a second barrier layer on the first barrier layer; forming a first hard mask on the second barrier layer; removing the first hard mask and the second barrier layer to form a recess; and forming a p-type semiconductor layer in the recess.

公开(公告)号：US11177377B2

公开(公告)日：2021-11-16

申请号：US16726263

申请日：2019-12-24

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Ming Chang ,  Wen-Jung Liao ,  Chun-Liang Hou

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/205 ,  H01L29/06 ,  H01L29/66 ,  H01L21/265 ,  H01L21/306 ,  H01L21/02 ,  H01L29/34

Abstract: A mesa structure includes a substrate. A mesa protrudes out of the substrate. The mesa includes a slope and a top surface. The slope surrounds the top surface. A lattice damage area is disposed at inner side of the slope. The mesa can optionally further includes an insulating layer covering the lattice damage area. The insulating layer includes an oxide layer or a nitride layer.

公开(公告)号：US11171227B2

公开(公告)日：2021-11-09

申请号：US16659579

申请日：2019-10-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Ming Chang ,  Wen-Jung Liao

IPC: H01L29/778 ,  H01L29/66 ,  H01L29/20 ,  H01L21/76 ,  H01L21/8258 ,  H01L21/8252 ,  H01L29/06

Abstract: A semiconductor device includes an enhancement mode high electron mobility transistor (HEMT) with an active region and an isolation region. The HEMT includes a substrate, a group III-V body layer, a group III-V barrier layer, a group III-V gate structure and a group III-V patterned structure. The group III-V body layer and the group III-V barrier layer are disposed on the substrate. The group III-V gate structure is disposed on the group III-V barrier layer within the active region. The group III-V patterned structure is disposed on the group III-V barrier layer within the isolation region. The composition of the group III-V patterned structure is the same as the composition of the group III-V gate structure.