公开(公告)号：US20230290839A1

公开(公告)日：2023-09-14

申请号：US18199359

申请日：2023-05-18

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chih-Tung Yeh ,  Chun-Liang Hou ,  Wen-Jung Liao ,  Chun-Ming Chang ,  Yi-Shan Hsu ,  Ruey-Chyr Lee

IPC: H01L29/417 ,  H01L29/778 ,  H01L29/66

CPC classification number: H01L29/4175 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/0684

Abstract: A high electron mobility transistor includes a substrate, a mesa structure disposed on the substrate, a passivation layer disposed on the mesa structure, and at least a contact structure disposed in the passivation layer and the mesa structure. The mesa structure includes a channel layer, a barrier layer on the channel layer, two opposite first edges extending along a first direction, and two opposite second edges extending along a second direction. The contact structure includes a body portion and a plurality of protruding portions. The body portion penetrates through the passivation layer. The protruding portions penetrate through the barrier layer and a portion of the channel layer. In a top view, the body portion overlaps the two opposite first edges of the mesa structure without overlapping the two opposite second edges of the mesa structure.

公开(公告)号：US20220367694A1

公开(公告)日：2022-11-17

申请号：US17330420

申请日：2021-05-26

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chih-Tung Yeh ,  Chun-Liang Hou ,  Wen-Jung Liao ,  Ruey-Chyr Lee

IPC: H01L29/778 ,  H01L29/66 ,  H01L29/20 ,  H01L29/205 ,  H01L29/45 ,  H01L29/40

Abstract: A semiconductor transistor structure with reduced contact resistance includes a substrate, a channel layer on the substrate, a barrier layer on the channel layer, a two-dimensional electron gas (2DEG) layer at an interface between the barrier layer and the channel layer, and a recess in a contact region. The recess penetrates through the barrier layer and extends into the channel layer. An Ohmic contact metal is disposed in the recess. The Ohmic contact metal is in direct contact with a vertical side surface of the barrier layer in the recess and in direct contact with an inclined side surface of the 2DEG layer and the channel layer in the recess.

公开(公告)号：US20240014306A1

公开(公告)日：2024-01-11

申请号：US17886491

申请日：2022-08-12

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chih-Tung Yeh ,  Ruey-Chyr Lee ,  Wen-Jung Liao

IPC: H01L29/778 ,  H01L29/205 ,  H01L29/20 ,  H01L29/66 ,  H01L21/306 ,  H01L21/3065

CPC classification number: H01L29/7786 ,  H01L29/205 ,  H01L29/2003 ,  H01L29/66462 ,  H01L21/30604 ,  H01L21/3065

Abstract: A semiconductor device provided with features of depletion mode (D-mode) and enhancement mode (E-mode) GaN devices, including a substrate with a first region and a second region defined thereon, a GaN channel layer on the substrate, a AlGaN layer on the GaN channel layer, a p-GaN layer on the AlGaN layer in the first region, a Al-based passivation layer on the AlGaN layer and p-GaN layer, and gate contact openings, wherein the gate contact opening on the first region extends through the Al-based passivation layer to the top surface of p-GaN layer, the gate contact opening on the second region extends through the Al-based passivation layer to the surface of AlGaN layer, and the surfaces of p-GaN layer and AlGaN layer are both flat surfaces without recess feature.

公开(公告)号：US11791407B2

公开(公告)日：2023-10-17

申请号：US17330420

申请日：2021-05-26

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chih-Tung Yeh ,  Chun-Liang Hou ,  Wen-Jung Liao ,  Ruey-Chyr Lee

IPC: H01L29/40 ,  H01L29/778 ,  H01L29/66 ,  H01L29/205 ,  H01L29/45 ,  H01L29/20

CPC classification number: H01L29/7783 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/401 ,  H01L29/454 ,  H01L29/66462

Abstract: A semiconductor transistor structure with reduced contact resistance includes a substrate, a channel layer on the substrate, a barrier layer on the channel layer, a two-dimensional electron gas (2DEG) layer at an interface between the barrier layer and the channel layer, and a recess in a contact region. The recess penetrates through the barrier layer and extends into the channel layer. An Ohmic contact metal is disposed in the recess. The Ohmic contact metal is in direct contact with a vertical side surface of the barrier layer in the recess and in direct contact with an inclined side surface of the 2DEG layer and the channel layer in the recess.

公开(公告)号：US12266701B2

公开(公告)日：2025-04-01

申请号：US18199359

申请日：2023-05-18

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chih-Tung Yeh ,  Chun-Liang Hou ,  Wen-Jung Liao ,  Chun-Ming Chang ,  Yi-Shan Hsu ,  Ruey-Chyr Lee

IPC: H01L29/417 ,  H01L29/06 ,  H01L29/20 ,  H01L29/205 ,  H01L29/40 ,  H01L29/66 ,  H01L29/778

Abstract: A high electron mobility transistor includes a substrate, a mesa structure disposed on the substrate, a passivation layer disposed on the mesa structure, and at least a contact structure disposed in the passivation layer and the mesa structure. The mesa structure includes a channel layer, a barrier layer on the channel layer, two opposite first edges extending along a first direction, and two opposite second edges extending along a second direction. The contact structure includes a body portion and a plurality of protruding portions. The body portion penetrates through the passivation layer. The protruding portions penetrate through the barrier layer and a portion of the channel layer. In a top view, the body portion overlaps the two opposite first edges of the mesa structure without overlapping the two opposite second edges of the mesa structure.

公开(公告)号：US11695049B2

公开(公告)日：2023-07-04

申请号：US17029075

申请日：2020-09-23

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chih-Tung Yeh ,  Chun-Liang Hou ,  Wen-Jung Liao ,  Chun-Ming Chang ,  Yi-Shan Hsu ,  Ruey-Chyr Lee

IPC: H01L29/417 ,  H01L29/778 ,  H01L29/66 ,  H01L29/06 ,  H01L29/40 ,  H01L29/205 ,  H01L29/20

CPC classification number: H01L29/4175 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/0684 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/401

Abstract: A high electron mobility transistor (HEMT) and method for forming the same are disclosed. The high electron mobility transistor includes a substrate, a mesa structure disposed on the substrate, a passivation layer disposed on the mesa structure, and at least a contact structure disposed in the passivation and the mesa structure. The mesa structure includes a channel layer and a barrier layer disposed on the channel layer. The contact structure includes a body portion and a plurality of protruding portions. The body portion is through the passivation layer. The protruding portions connect to a bottom surface of the body portion and through the barrier layer and a portion of the channel layer.

公开(公告)号：US12206000B2

公开(公告)日：2025-01-21

申请号：US18416764

申请日：2024-01-18

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chih-Tung Yeh ,  Chun-Liang Hou ,  Wen-Jung Liao ,  Chun-Ming Chang ,  Yi-Shan Hsu ,  Ruey-Chyr Lee

IPC: H01L29/417 ,  H01L29/06 ,  H01L29/20 ,  H01L29/205 ,  H01L29/40 ,  H01L29/66 ,  H01L29/778

Abstract: A method for forming a high electron mobility transistor is disclosed. A mesa structure having a channel layer and a barrier layer is formed on a substrate. The mesa structure has two first edges extending along a first direction and two second edges extending along a second direction. A passivation layer is formed on the substrate and the mesa structure. A first opening and a plurality of second openings connected to a bottom surface of the first opening are formed and through the passivation layer, the barrier layer and a portion of the channel layer. In a top view, the first opening exposes the two first edges of the mesa structure without exposing the two second edges of the mesa structure. A metal layer is formed in the first opening and the second openings thereby forming a contact structure.

公开(公告)号：US20240071758A1

公开(公告)日：2024-02-29

申请号：US17951119

申请日：2022-09-23

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chih-Tung Yeh ,  You-Jia Chang ,  Bo-Yu Chen ,  Yun-Chun Wang ,  Ruey-Chyr Lee ,  Wen-Jung Liao

IPC: H01L21/02 ,  H01L21/306 ,  H01L29/20 ,  H01L29/423 ,  H01L29/66 ,  H01L29/778

CPC classification number: H01L21/0254 ,  H01L21/30612 ,  H01L29/2003 ,  H01L29/42376 ,  H01L29/66462 ,  H01L29/7786

Abstract: A method for fabricating a high electron mobility transistor (HEMT) includes the steps of forming a buffer layer on a substrate, forming a barrier layer on the buffer layer, forming a p-type semiconductor layer on the barrier layer, forming a gate electrode layer on the p-type semiconductor layer, and patterning the gate electrode layer to form a gate electrode. Preferably, the gate electrode includes an inclined sidewall.