公开(公告)号：JP2003209239A

公开(公告)日：2003-07-25

申请号：JP2003000145

申请日：2003-01-06

Applicant: XEROX CORP

Inventor： STREET ROBERT A ,  BOYCE JAMES B ,  KNIGHTS JOHN C

IPC: H01L27/146 ,  H04N5/335

Abstract: PROBLEM TO BE SOLVED: To provide a CMOS image sensor having a low crosstalk and a high light absorbance. SOLUTION: The image sensor includes inactivated walls 210 extended into the interior of a photosensor layer upwardly from pixel contact pads 113, and the pads 113 are isolated from each other to reduce crosstalk. In an embodiment, a metal structure, to which a negative bias is applied to prevent crosstalk and which is extended as far as the lower part of any of the contact pads to increase the capacities of the pixels, is provided in a lower part of an interface region for separating adjacent pixels. In an embodiment, not p-type dopants but another photodiode material is contained in a lower amorphous silicon photodiode layer. COPYRIGHT: (C)2003,JPO

公开(公告)号：JPH10108074A

公开(公告)日：1998-04-24

申请号：JP21751197

申请日：1997-08-12

Applicant: XEROX CORP

Inventor： STREET ROBERT A

IPC: G01J1/44 ,  H01L27/146 ,  H04N5/335

Abstract: PROBLEM TO BE SOLVED: To generate a high signal-to-noise ratio and to improve sensitivity and a dynamic range by providing an intra-pixel amplifier for amplifying signals for which influence exerted to the entire noise corresponding to it is minimum. SOLUTION: When light is abutted to a sensor Sn 202, a voltage in the output of the sensor is increased to a bias voltage VB. When a point X reaches the VB, a capacitor CS relating to the sensor 202 is saturated. After imaging, in order to read electric charges stored in the sensor Sn 202, a gate line Gn 200 is turned to a high order. At the time of assuming that the threshold voltage of a transistor An 206 is zero, when the gate line Gn 200 becomes the high order, an amplifier transistor An 206 and a path transistor Pn 208 are both switched on, and a current is allowed to flow to a data line 230. The current flowing to the data line 230 is decided by the voltage at the point X and then integrated by an external integrator 232 during the selected time.