公开(公告)号：JPH10107034A

公开(公告)日：1998-04-24

申请号：JP1196597

申请日：1997-01-07

Applicant: UNITED MICROELECTRONICS CORP

Inventor： DER-YUAN UU ,  II CHUN SHEN

IPC: H01L21/285 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/768 ,  H01L21/8242 ,  H01L23/52 ,  H01L27/108 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To facilitate the patterning of a word line by a method wherein a gate is formed on a substrate to form the first metallic silicide layer on the gate and further to form the second metallic silicide layer having silicon in higher concentration than that of the first metallic silicone layer on the first metallic silicide layer. SOLUTION: A substrate having a gate oxide layer 24 and a polysilicon word line 26 is prepared so as to form a refractory metallic silicide layer i.e., a tungsten silicide is formed on the word line 26. Next, a silicon rich metallic silicide or pure silicon layer 30 is formed on the upper surface of the metallic silicide layer 28. This pure silicon layer 30 has silicon on higher concentration than that of the metallic silicide layer 28. Next, an uppermost oxide layer 32 is formed on the upper part surface of the pure silicon layer 30. Resultantly, the formation of tungsten oxide can be avoided thereby facilitating the patterning of the word line. Furthermore, the surface of the oxide layer can be made smooth.

公开(公告)号：JPH1079490A

公开(公告)日：1998-03-24

申请号：JP9118097

申请日：1997-04-09

Applicant: UNITED MICROELECTRONICS CORP

Inventor： CHAO FANG-CHING

IPC: H01L21/8242 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To widen a charge storage area, without widening the surface of a substrate in such a manner that a trunk conductive member of a charge storage capacitor connected to a transfer transistor has lower and upper trunk layers and an L-letter shaped branch conductive layer is connected to the upper trunk layer. SOLUTION: A first storage electrode 49a and a second storage electrode 49b of a DRAM storage capacitor have lower trunk-polysilicon layers 26a, 26b, upper trunk-polysilicon layers 46a, 46b, and branch polysilicon layers 40a, 40b, respectively. Each of the branch polysilicon layers 40a, 40b has L-shape cross section and has a vertical expanding part which extends toward a top face 11 of a substrate 10 and a horizontal extension part which is in direct contact with the inner face of each of the trunk upper polysilicon layers 46a, 46b. The lower trunk polysilicon layers 26a, 26b, each having a T-shape cross section are in direct contact with drain regions 16a, 16b of the DRAM transfer transistor, respectively.

公开(公告)号：JPH1079475A

公开(公告)日：1998-03-24

申请号：JP9117897

申请日：1997-04-09

Applicant: UNITED MICROELECTRONICS CORP

Inventor： CHAO FANG-CHING

IPC: H01L21/8242 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To increase a charge storage area by providing a transfer transistor having source and drain regions, formed on a substrate, and a tree-type capacitor electrically connected to one of the source and drain regions of the transfer transistor. SOLUTION: A storage electrode has a trunk-shaped polysilicon layer 44, having a substantially T-shaped cross section and a branch-shaped polysilicon layer 38 having a substantially L-shaped cross section. The bottom of the trunk- shape polysilicon layer 44 is electrically connected to a drain region 16 of the transfer transistor of the DRAM cell. Sections of the branch-shaped polysilicon layer 38 extend sideward from a vertical portion and extend downward toward a substrate 10. Next, a dielectric layer 46 is formed over the entire exposed surfaces of the trunk-shaped polysilicon layer 44 and the sections of the branch shaped polysilicon layer 38. Next, a polysilicon layer 48 as an oppositely located electrode to the storage electrodes 44 and 38 is formed over the entire dielectric layer 46.

公开(公告)号：JPH09231693A

公开(公告)日：1997-09-05

申请号：JP3529896

申请日：1996-02-22

Applicant: UNITED MICROELECTRONICS CORP

Inventor： UEIIHIYUN HIYUAN

IPC: G11B20/18

Abstract: PROBLEM TO BE SOLVED: To correct data errors selectively in accordance with the type of an optical disk. SOLUTION: As a method for correcting data errors, first an old data sequence and the incidental old eraser pointer are received from an optical disk drive (first step). Next, the old data sequence and the incidental eraser sequence are decoded, outputting a set of new data sequence and an eraser pointer corrected parameter (second step). After that, on the basis of this set, plural eraser pointers are decided that are incidental to the new data sequence (third step). In addition, this device is so structured as to contain a decoding circuit 210 for performing the first step, logical mapping conversion circuit 220 for performing the second step, and a multiplexer 230 for outputting this logical mapping conversion circuit or selectively outputting the old eraser pointer.

公开(公告)号：JPH08131664A

公开(公告)日：1996-05-28

申请号：JP27363294

申请日：1994-11-08

Applicant: UNITED MICROELECTRONICS CORP

Inventor： CHI MAO HIYUAN

IPC: A63H5/04 ,  A63H33/26

Abstract: PURPOSE: To harmonize the generation of sounds with twinkles of diodes, etc., to obtain a true-to-life effect by including a sound/frequency transforming circuit, etc., and modifying the twinkle frequency of the twinkle controller to harmonize it with the volume and mass of the shots, in an integral circuit for shots and twinkles of a toy gun. CONSTITUTION: A sound level/mass detector 10 for detecting the input sound level and mass starts along with the start of a shot synthesizer 50. Different selected signals are outputted from a plurality of frequency selecting output terminals SELA, SELB and inputted to a frequency generator 20. The frequency generator 20 modifies the output frequency in correspondence with the input selecting signals, gets to start along with the start of the shot synthesizer 50, outputs the modified frequency which is inputted to a twinkle controller 60. The twinkle controller 60 modifies the activating frequency in correspondence with the input frequency, with which the various diodes 61-63 connected to the various output terminals modify the twinkle frequency.

公开(公告)号：JP2010085470A

公开(公告)日：2010-04-15

申请号：JP2008251641

申请日：2008-09-29

Applicant: United Microelectronics Corp ,  聯華電子股▲分▼有限公司

Inventor： YANG YU SHIANG ,  WU TE-HUNG ,  CHENG YUNG-FENG ,  YANG CHUEN-HUEI ,  HUANG HSIANG-YUN ,  KUO HUI-FANG ,  KUO SHIH-MING ,  CHEN LUN-HUNG

IPC: G03F1/36 ,  G03F1/68 ,  G03F1/70

Abstract: PROBLEM TO BE SOLVED: To provide a method for selectively correcting a layout pattern. SOLUTION: A first layout pattern including at least a first group and a second group is provided. Each of the first group and the second group includes a plurality of members. All members in the first group and the second group are individually subjected to a simulation process and a correction process to obtain a corrected first group and a corrected second group. The corrected first group and the corrected second group are verified whether the groups reach the target or not. After verification, a layout pattern including the corrected first group reaching the target and the corrected second group reaching the target is output. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于选择性地校正布局图案的方法。 提供了包括至少第一组和第二组的第一布局图案。 第一组和第二组中的每一个包括多个构件。 第一组和第二组中的所有成员分别经受模拟处理和校正处理，以获得校正的第一组和校正的第二组。 验证校正的第一组和校正的第二组是否到达目标。 在验证之后，输出包括到达目标的校正的第一组和到达目标的校正的第二组的布局模式。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2009124178A

公开(公告)日：2009-06-04

申请号：JP2009042807

申请日：2009-02-25

Applicant: United Microelectronics Corp ,  聯華電子股▲ふん▼有限公司

Inventor： EGUCHI KOHEI ,  MIZUO YUURI

IPC: H01L21/76 ,  H01L27/08

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device which has a trench-type element separation structure with improved electric characteristics, and to provide its manufacturing method.
SOLUTION: A groove 4 is covered with a first silicon oxide film 6 and heated. A joint 7 formed on the first silicon oxide film 6 is covered with a second silicon oxide film 8 and heated again. Thus, the first silicon oxide film 6 and the second silicon oxide film 8 are made to be high in density, and the groove 4 is covered with them as a rigid element isolation oxide film 9 with an uniform etching rate.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供具有改善的电特性的沟槽型元件分离结构的半导体器件，并提供其制造方法。 解决方案：槽4被第一氧化硅膜6覆盖并加热。 形成在第一氧化硅膜6上的接头7被第二氧化硅膜8覆盖并再次加热。 因此，第一氧化硅膜6和第二氧化硅膜8的密度高，槽4被作为刚性元件隔离氧化膜9以均匀的蚀刻速率被覆盖。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008193038A

公开(公告)日：2008-08-21

申请号：JP2007099820

申请日：2007-04-05

Applicant: United Microelectronics Corp ,  聯華電子股▲分▼有限公司

Inventor： CHEN MEI-LING ,  LAI KUO-CHIH ,  SUNG SU-JEN ,  HUANG CHEN-CHUNG ,  LAI YU-TSUNG

IPC: H01L21/768 ,  C23C16/40 ,  C23C16/455 ,  H01L21/316 ,  H01L23/522

CPC classification number: H01L21/31695 ,  H01L21/02164 ,  H01L21/02203 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/7682 ,  H01L21/76835 ,  Y10T428/24992

Abstract: PROBLEM TO BE SOLVED: To provide a method of forming a porous low-permittivity layer. SOLUTION: A CVD process is introduced to a substrate to which a frame precursor and a porogen precursor are supplied. In the supply stop period of the frame precursor, the value of at least one deposition parameter which is negatively correlated with the density of a product of the CVD process decreases. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供形成多孔低介电常数层的方法。 解决方案：将CVD工艺引入到其中提供框架前体和致孔剂前体的基底上。 在框架前体的供给停止期间，与CVD工序的产品的密度呈负相关的至少一个沉积参数的值降低。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2007328015A

公开(公告)日：2007-12-20

申请号：JP2006157196

申请日：2006-06-06

Applicant: United Microdisplay Optronics Corp ,  United Microelectronics Corp ,  聯華電子股▲分▼有限公司 ,  聯誠光電股▲フン▼有限公司

Inventor： SHU SHIKEN ,  O FUKOKU ,  GO GITEI

IPC: G02F1/1337

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a liquid crystal alignment layer by which powders and particles are prevented from producing on an organic alignment layer and a patterning process can be conducted on an inorganic alignment layer so as to increase the latitude of design of the inorganic alignment layer. SOLUTION: The method for manufacturing the liquid crystal alignment layer includes a step to conduct an ion implantation process after furnishing a step to provide an organic or inorganic material layer on a substrate for the purpose of imparting alignment treatment to the organic or inorganic material layer. As the alignment treatment is a kind of noncontact method, it reduces probability of damaging the organic alignment layer so as to prevent the production of powder and particles. Furthermore, the inorganic material layer is formed on the substrate before the alignment treatment, and thereby the inorganic material layer is pattern formed before the alignment treatment. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 解决问题的方案：提供一种制造液晶取向层的方法，通过该方法可以防止在有机取向层上产生粉末和颗粒，并且可以对无机取向层进行图案化处理，以增加 无机取向层设计的纬度。 解决方案：液晶取向层的制造方法包括在提供在基材上提供有机或无机材料层的步骤之后进行离子注入工艺的步骤，用于赋予有机或无机的取向处理 材料层。 由于取向处理是一种非接触方法，因此降低了有机取向层损伤的可能性，从而防止粉末和颗粒的产生。 此外，在取向处理之前，在基板上形成无机材料层，从而在取向处理之前形成无机材料层。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2007319695A

公开(公告)日：2007-12-13

申请号：JP2007177646

申请日：2007-07-05

Applicant: United Microelectronics Corp ,  聯華電子股▲ふん▼有限公司

Inventor： HAZAMA KATSUKI

IPC: A63F1/18 ,  A63F1/02 ,  A63F1/06 ,  A63F3/00 ,  A63F3/02 ,  G06K17/00 ,  G06K19/00 ,  G06K19/07

Abstract: PROBLEM TO BE SOLVED: To provide a data carrier which can correctly recognize a position relation of surface/backside judgement by a card reader side and independently have a first function corresponding to the surface side of a card and a second function corresponding to the backside individually. SOLUTION: A non-contact type data carrier 1 receives radio waves 20 transmitted from a card reader 1 by an antenna and an information communication part to acquire required power and information. Required processing is carried out by a control part based on the acquired information and information stored in a multi-value memory. By a surface/backside judging part, surface or backside of the data carrier 1 is detected based on the direction of electric current flowing in a coil L. Based on the detection result, different functions are carried out. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供一种数据载体，其能够正确地识别读卡器侧的表面/背面判断的位置关系，并且独立地具有对应于卡的表面侧的第一功能和对应于 背面单独。 解决方案：非接触型数据载体1通过天线和信息通信部分接收从读卡器1发送的无线电波20以获取所需的功率和信息。 基于所获取的信息和存储在多值存储器中的信息，由控制部分执行所需的处理。 通过表面/背面判断部分，基于在线圈L中流动的电流的方向来检测数据载体1的表面或背面。基于检测结果，执行不同的功能。 版权所有（C）2008，JPO＆INPIT