Abstract:
The present invention relates to an electrode assembly having a laminate structure comprising: a first insulating capping layer; a first conducting layer capped by the first insulating capping layer and substantially sandwiched by at least the first insulating capping layer such as to leave exposed only an electrical contact lip of the first conducting layer; and an array of etched voids extending through at least the first insulating capping layer and the first conducting layer, wherein each void is partly bound by a surface of the first conducting layer which acts as an internal submicron electrode.
Abstract:
A sensor assembly for being mounted on a circuit board (CB) comprises an interposer (I) with at least one opening (01, 02, 03, 04) extending between a first and a second main surface (MS1, MS2) of the interposer (I). The interposer (I) comprises at least two stress decoupling elements, each comprising a flexible structure (F1, F2, F3, F4) formed by a respective portion of the interposer (I) being partially enclosed by one of the at least one opening (01, 02, 03, 04). A sensor die (S) is connected to the flexible structures (F1, F2, F3, F4) on the first main surface (MS1). At least two board connection elements (SB) are arranged on the first main surface (MS1) and adapted for connecting the assembly to the circuit board (CB).
Abstract:
Dispositif microélectromécanique comprenant une structure mécanique (P1) s'étendant principalement selon une direction longitudinale (x), reliée à un substrat planaire (S) par au moins un ancrage (APLM, APLM2) situé à l'une de ses extrémités et susceptible de fléchir dans un plan parallèle au substrat, ladite structure mécanique comprenant une portion de raccord, qui la relie audit ou à chaque dit ancrage et qui inclut une région résistive (R1) présentant une première (PL1M1) et une deuxième (12) zone d'injection d'un courant électrique pour former un transducteur résistif, ladite région résistive s'étendant principalement dans ladite direction longitudinale à partir dudit ou d'un dit ancrage et étant agencée de telle sorte qu'une flexion de ladite structure mécanique dans ledit plan parallèle au substrat induise dans ladite région résistive une contrainte moyenne non nulle et réciproquement; caractérisé en ce que : ladite première zone d'injection est portée par ledit ancrage ; et ladite deuxième zone d'injection est portée par un élément conducteur non fixé audit substrat et s'étendant principalement dans une direction dite latérale, sensiblement perpendiculaire à ladite direction longitudinale.
Abstract:
The present invention relates to a semiconductor device, comprising a semiconductor substrate (10) having a first (12a) and a second (12b) side. There is provided at least one via (15) extending through said substrate (10) having first (16a) and second (16b) end surfaces, said first end surface (16a) constituting an transducer electrode for interacting with a movable element (14) arranged at the first side (12a) of the substrate (10). A shield (17) is provided on and covers at least part of the first side (12a) of the substrate (10), the shield/mask (17) comprising a conductive layer (19a) and an insulating material layer (19b) provided between the substrate (10) and the conductive layer (19a). The mask has an opening (18) exposing only a part of the first surface (16a) of the via. Preferably the opening (18) in the mask is precisely aligned with the movable element, and the area of the opening is accurately defined.
Abstract:
Disclosed herein is a gas sensing device comprising a dielectric membrane formed on a semiconductor substrate comprising a bulk-etched cavity portion, a heater located within or over the dielectric membrane, a material for sensing a gas which is located on one side of the membrane, a support structure located near the material, and a gas permeable region coupled to the support structure so as to protect the material.
Abstract:
The present invention relates to an electrode assembly having a laminate structure comprising: a first insulating capping layer; a first conducting layer capped by the first insulating capping layer and substantially sandwiched by at least the first insulating capping layer such as to leave exposed only an electrical contact lip of the first conducting layer; and an array of etched voids extending through at least the first insulating capping layer and the first conducting layer, wherein each void is partly bound by a surface of the first conducting layer which acts as an internal submicron electrode.
Abstract:
Die Erfindung betrifft ein Bauteil (65) für einen Sensor (28) mit einem Sensorelement (35) und einer Ausgangsschnittstelle (67) zum Ausgeben eines von einer physikalischen Größe (20) abhängigen elektrischen Signals aus dem Sensorelement (35) an der Ausgangsschnittstelle (67), umfassend: - eine Schaltung mit wenigstens einem ersten Signalpfad (70) zum Empfangen des elektrischen Signals (42) vom Sensorelement (35) und zum Leiten des elektrischen Signals (42) an die Ausgangsschnittstelle (67) und einen vom ersten Signalpfad (70) verschiedenen zweiten Signalpfad (70) zum Leiten des elektrischen Signals (42) an die Ausgangsschnittstelle (67), - wobei eine Aktivität des ersten Signalpfades (70) oder des zweiten Signalpfades (70) von einer Lage des Bauteils (65) in dem Sensor (28) abhängig ist.
Abstract:
A low power consumption multi-contact micro electro-mechanical strain/displacement sensor and miniature autonomous self-contained systems for recording of stress and usage history with direct output suitable for fatigue and load spectrum analysis are provided. In aerospace applications the system can assist in prediction of fatigue of a component subject to mechanical stresses as well as in harmonizing maintenance and overhauls intervals. In alternative applications, i.e. civil structures, general machinery, marine and submarine vessels, etc., the system can autonomously record strain history, strain spectrum or maximum values of the strain over a prolonged period of time using an internal power supply or a power supply combined with an energy harvesting device. The sensor is based on MEMS technology and incorporates a micro array of flexible micro or nano-size cantilevers. The system can have extremely low power consumption while maintaining precision and temperature/humidify independence.
Abstract:
The present invention relates to a semiconductor device, comprising a semiconductor substrate (10) having a first (12a) and a second (12b) side. There is provided at least one via (15) extending through said substrate (10) having first (16a) and second (16b) end surfaces, said first end surface (16a) constituting an transducer electrode for interacting with a movable element (14) arranged at the first side (12a) of the substrate (10). A shield (17) is provided on and covers at least part of the first side (12a) of the substrate (10), the shield/mask (17) comprising a conductive layer (19a) and an insulating material layer (19b) provided between the substrate (10) and the conductive layer (19a). The mask has an opening (18) exposing only a part of the first surface (16a) of the via. Preferably the opening (18) in the mask is precisely aligned with the movable element, and the area of the opening is accurately defined.