公开(公告)号：WO02005344A1

公开(公告)日：2002-01-17

申请号：PCT/FR2001/002239

申请日：2001-07-11

IPC: H01L21/265 ,  B81C1/00 ,  H01L21/02 ,  H01L21/20 ,  H01L21/301 ,  H01L21/762 ,  H01L27/12

CPC classification number: H01L21/76254 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  Y10T156/1153 ,  Y10T156/1158 ,  Y10T156/1184 ,  Y10T156/1911 ,  Y10T156/1967

Abstract: The invention concerns a method for cutting a block of material (10) comprising the following steps: a) forming in the block a buried zone (12), embrittled by at least an ion-inserting step, the buried zone delimiting at least a surface part (14) of the block; b) forming at the embrittled zone at least an incipient cleavage (30, 36) using first separating means selected among inserting a tool, injecting a fluid, a heat treatment and/or ion implantation of an ionic species different from that inserted during the preceding step; and c) separating at the embrittled zone of the surface part (14) of the block a remaining part (16), called mass part, from the incipient cleavage (30, 36) using second means, different from the first separation means and selected among heat treatment and/or applying mechanical forces exerted between the surface part and the embrittled zone. The invention is useful for making micro-electronic, optoelectronic or micro-mechanical components,

Abstract translation: 本发明涉及一种用于切割材料块（10）的方法，包括以下步骤：a）在块中形成通过至少离子插入步骤脆化的掩埋区（12），所述掩埋区限定至少一个表面 块的部分（14）; b）使用第一分离装置在脆化区形成至少初始裂缝（30,36），所述第一分离装置选自插入工具，注入流体，热处理和/或离子注入与之前插入的离子种类不同的离子物质 步; 以及c）使用与所述第一分离装置不同的第二装置，将所述块的表面部分（14）的脆化区域从称为质量部分的剩余部分（16,36）从初始裂缝（30,36）分离并选择 在热处理和/或施加施加在表面部分和脆化区域之间的机械力之间。 本发明可用于制造微电子，光电子或微机械部件，

公开(公告)号：JP6400693B2

公开(公告)日：2018-10-03

申请号：JP2016522377

申请日：2014-06-11

Applicant: ソイテック ,  Soitec

Inventor： サダカ, マリアム ,  エスカルノー, ルドヴィック

IPC: H03H3/007 ,  H03H9/24 ,  B81C1/00

CPC classification number: B81C1/00047 ,  B81B1/002 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C1/00158 ,  B81C2201/0105 ,  B81C2201/014 ,  B81C2201/0192

公开(公告)号：JP5111713B2

公开(公告)日：2013-01-09

申请号：JP2002509103

申请日：2001-07-11

Applicant: コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ

Inventor： ベルナール・アスパール ,  クリステル・ラガシュ

IPC: H01L21/02 ,  H01L21/265 ,  B81C1/00 ,  H01L21/20 ,  H01L21/301 ,  H01L21/762 ,  H01L27/12

CPC classification number: H01L21/76254 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  Y10T156/1153 ,  Y10T156/1158 ,  Y10T156/1184 ,  Y10T156/1911 ,  Y10T156/1967

公开(公告)号：JP2004503111A

公开(公告)日：2004-01-29

申请号：JP2002509103

申请日：2001-07-11

Applicant: コミツサリア タ レネルジー アトミーク

Inventor： クリステル・ラガシュ ,  ベルナール・アスパール

IPC: H01L21/265 ,  B81C1/00 ,  H01L21/02 ,  H01L21/20 ,  H01L21/301 ,  H01L21/762 ,  H01L27/12

CPC classification number: H01L21/76254 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  Y10T156/1153 ,  Y10T156/1158 ,  Y10T156/1184 ,  Y10T156/1911 ,  Y10T156/1967

Abstract: 本発明は、材料ブロック（１０）を切り取るための方法に関するものであって、（ａ）ブロック内において、イオン導入という少なくとも１つのステージによって脆弱化された埋設ゾーン（１２）を形成し、この埋設ゾーンにより少なくとも１つの表層部分（１４）を規定し；（ｂ）ツールの挿入、流体の注入、熱処理、および／または、先のステージとはイオン特性が相違するイオン打込、の中から選択された第１分離手段を使用することによって、脆弱化ゾーンの高さ位置に分離開始ゾーン（３０，３６）を形成し；（ｃ）熱処理、および／または、機械的力の印加、の中から選択された第２分離手段を使用することによって、分離開始ゾーン（３０，３６）を起点として、脆弱化ゾーンの高さ位置において、ブロックの表層部分（１４）を、バルク部と称される残部（１６）から分離する。

公开(公告)号：US09929054B2

公开(公告)日：2018-03-27

申请号：US14968685

申请日：2015-12-14

Applicant: Solexel, Inc.

Inventor： Takao Yonehara ,  Virendra V. Rana ,  Sean M. Seutter ,  Mehrdad M. Moslehi ,  Subramanian Tamilmani

IPC: H01L21/762 ,  H01L21/78 ,  H01L21/268 ,  H01L21/304 ,  H01L31/18 ,  B23K26/00 ,  B23K26/08 ,  H01L31/0224 ,  H01L31/068 ,  B23K26/70 ,  B23K26/082 ,  B23K26/0622 ,  B81C1/00 ,  B42D25/00 ,  B23K26/244 ,  H01L33/00 ,  B23K101/40 ,  H01L25/065 ,  B23K103/00

CPC classification number: H01L21/7813 ,  B23K26/0006 ,  B23K26/0093 ,  B23K26/0622 ,  B23K26/082 ,  B23K26/0869 ,  B23K26/244 ,  B23K26/50 ,  B23K26/53 ,  B23K26/702 ,  B23K2101/40 ,  B23K2103/52 ,  B42D25/00 ,  B81C1/0038 ,  B81C1/0088 ,  B81C2201/0192 ,  B81C2201/0194 ,  H01L21/268 ,  H01L21/304 ,  H01L21/76254 ,  H01L21/76259 ,  H01L25/0657 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/1892 ,  H01L33/0079 ,  H01L33/0095 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48247 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/13091 ,  H01L2924/1461 ,  Y02E10/547 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: Methods and systems are provided for the split and separation of a layer of desired thickness of crystalline semiconductor material containing optical, photovoltaic, electronic, micro-electro-mechanical system (MEMS), or optoelectronic devices, from a thicker donor wafer using laser irradiation.

公开(公告)号：US09214353B2

公开(公告)日：2015-12-15

申请号：US13778047

申请日：2013-02-26

Applicant: Solexel, Inc.

Inventor： Takao Yonehara ,  Virenda V. Rana ,  Sean Seutter ,  Mehrdad M. Moslehi ,  Subramanian Tamilmani

IPC: H01L21/762 ,  H01L21/304 ,  H01L21/268 ,  H01L31/18 ,  B23K26/00 ,  B23K26/06 ,  B23K26/08 ,  B23K26/30 ,  H01L33/00 ,  H01L25/065

CPC classification number: H01L21/7813 ,  B23K26/0006 ,  B23K26/0093 ,  B23K26/0622 ,  B23K26/082 ,  B23K26/0869 ,  B23K26/244 ,  B23K26/50 ,  B23K26/53 ,  B23K26/702 ,  B23K2101/40 ,  B23K2103/52 ,  B42D25/00 ,  B81C1/0038 ,  B81C1/0088 ,  B81C2201/0192 ,  B81C2201/0194 ,  H01L21/268 ,  H01L21/304 ,  H01L21/76254 ,  H01L21/76259 ,  H01L25/0657 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/1892 ,  H01L33/0079 ,  H01L33/0095 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48247 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/13091 ,  H01L2924/1461 ,  Y02E10/547 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: Methods and systems are provided for the split and separation of a layer of desired thickness of crystalline semiconductor material containing optical, photovoltaic, electronic, micro-electro-mechanical system (MEMS), or optoelectronic devices, from a thicker donor wafer using laser irradiation.

Abstract translation: 提供的方法和系统用于使用激光照射从较厚的施主晶片分离和分离含有光学，光电，电子，微电子机械系统（MEMS）或光电子器件的期望厚度的结晶半导体材料的层。

公开(公告)号：US20100267183A1

公开(公告)日：2010-10-21

申请号：US12727978

申请日：2010-03-19

Applicant: Torsten Kramer ,  Kathrin Knese ,  Hubert Benzel ,  Karl-Heinz Kraft ,  Simon Armbruster

Inventor： Torsten Kramer ,  Kathrin Knese ,  Hubert Benzel ,  Karl-Heinz Kraft ,  Simon Armbruster

IPC: H01L21/50

CPC classification number: B81C1/00333 ,  B81C2201/0192 ,  B81C2203/0118 ,  B81C2203/0127 ,  H01L2924/16235

Abstract: A simple and economical method for manufacturing very thin capped MEMS components. In the method, a large number of MEMS units are produced on a component wafer. A capping wafer is then mounted on the component wafer, so that each MEMS unit is provided with a capping structure. Finally, the MEMS units capped in this way are separated to form MEMS components. A diaphragm layer is formed in a surface of the capping wafer by using a surface micromechanical method to produce at least one cavern underneath the diaphragm layer, support points being formed that connect the diaphragm layer to the substrate underneath the cavern. The capping wafer structured in this way is mounted on the component wafer in flip chip technology, so that the MEMS units of the component wafer are capped by the diaphragm layer. The support points are then cut through in order to remove the substrate.

Abstract translation: 一种用于制造非常薄的封装的MEMS部件的简单而经济的方法。 在该方法中，在部件晶片上产生大量的MEMS单元。 然后将封盖晶片安装在元件晶片上，使得每个MEMS单元设置有封盖结构。 最后，以这种方式封盖的MEMS单元被分离以形成MEMS部件。 通过使用表面微机械方法在覆盖晶片的表面中形成隔膜层，以在隔膜层下面产生至少一个洞穴，形成将隔膜层连接到洞穴下方的基底的支撑点。 以这种方式构造的封盖晶片以倒装芯片技术安装在元件晶片上，使得元件晶片的MEMS单元被隔膜层封盖。 然后将支撑点切开以去除基底。

公开(公告)号：US07410887B2

公开(公告)日：2008-08-12

申请号：US11627920

申请日：2007-01-26

Applicant: Francois J. Henley ,  Nathan W. Cheung

Inventor： Francois J. Henley ,  Nathan W. Cheung

IPC: H01L21/30 ,  H01L21/46

CPC classification number: H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Abstract translation: 一种用于从供体衬底（10）形成材料（12）的膜的技术。 该技术具有将能量粒子（22）通过供体衬底（10）的表面引入到表面下方的选定深度（20）的步骤，其中颗粒具有相对较高的浓度以限定施主衬底材料（12） 高于所选深度。 能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此，所述切割动作提供了扩张切割前沿，从而将供体材料从剩余的 部分供体基质。

公开(公告)号：US07371660B2

公开(公告)日：2008-05-13

申请号：US11281042

申请日：2005-11-16

Applicant: Francois J. Henley ,  Nathan W. Cheung

Inventor： Francois J. Henley ,  Nathan W. Cheung

IPC: H01L21/30 ,  H01L21/46

CPC classification number: H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

公开(公告)号：US07160790B2

公开(公告)日：2007-01-09

申请号：US10644644

申请日：2003-08-19

Applicant: Francois J. Henley ,  Nathan W. Cheung

Inventor： Francois J. Henley ,  Nathan W. Cheung

IPC: H01L21/30 ,  H01L21/46

CPC classification number: H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Abstract translation: 一种用于从供体衬底（10）形成材料（12）的膜的技术。 该技术具有将能量粒子（22）通过供体衬底（10）的表面引入到表面下方的选定深度（20）的步骤，其中颗粒具有相对较高的浓度以限定施主衬底材料（12） 高于所选深度。 能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此，所述切割动作提供了扩张切割前沿，从而将供体材料从剩余的 部分供体基质。