Abstract:
Radiated light with a specified wavelength from a material (21, P, 201) is detected and a first parameter corresponding to the emissivity ratio is obtained from the detection signal. Since the emissivity takes on different values according to the condition of the surface of the material, the first parameter changes depending on the surface condition of the material. There is a correlation between a physical value indicating a condition of the material surface and the first parameter. The correlation remains equivalent even if a second parameter corresponding to the physical value is used instead of the physical value itself (for example, an optical physical value such as reflectivity and absorptivity, the thickness of a film formed on the material surface, the surface roughness, and the degree of galvannealing). As an example of the parameter corresponding to the physical value, there is the logarithmic ratio between emissivities (ln ε a /ln ε b ) corresponding to the temperature in the vicinity of the surface. Therefore, a second parameter can be obtained on the basis of the correlation and a physical value can be obtained. When the emissivity or logarithmic emissivity ratio is used as the second parameter, the temperature in the vicinity of the material surface can be obtained from the second parameter and the detection signal.
Abstract:
A computer-implemented method of forming a thermal-based electronic image of an object that includes receiving electromagnetic radiation emitted by the object at an optically sensitive layer including a superpixel having a plurality of pixels. Each pixel of the plurality of pixels includes a plasmonic absorber having a characteristic resonance wavelength and that generates a radiance measurement of the electromagnetic radiation at its characteristic resonance wavelength. The method further provides for determining, at a processor, an emissivity and temperature for the electromagnetic radiation received at the superpixel using the radiance measurements obtained at the pixels of the superpixel. In addition, the method provides for forming an image of the object from the determined emissivity and temperature.
Abstract:
A Safety Cooking Device includes a thermal sensor that detects infrared radiation (IR) to generate thermal images of a cooktop over time, and a controller. The controller uses the thermal images to determine whether the cooktop is unattended. Both wired and wireless embodiments of the cooking safety device are disclosed. In one implementation, the cooking safety device is in communication with and reports to a security panel of a security system.
Abstract:
A temperature measurement device is provided with: light collection means; extraction means; optical intensity calculation means; and temperature measurement means. The light collection means collects the emission spectrum of a measurement subject. The extraction means extracts light having the wavelength of the atomic spectral lines and light having a wavelength in a wavelength region where there are no atomic spectral lines, from the emission spectrum collected by the aforementioned light collection means. The optical intensity calculation means calculates the optical intensities of the light extracted by the aforementioned extraction means. The temperature measurement means calculates the temperature of the aforementioned measurement subject, based on the intensities of the beams calculated by the aforementioned optical intensity calculation means.
Abstract:
There are provided an optical non-destructive inspection apparatus and an optical non-destructive inspection method. The apparatus includes a focusing-collimating unit, a heating laser beam source, a heating laser beam guide unit, an infrared detector, an emitted-infrared guide unit, first and second correcting laser beam source, first and second correcting laser beam guide units, first and second correcting laser detectors, first and second reflected laser beam guide units, and a control unit. The control unit controls the heating laser beam source and the first and second correcting laser beam sources, measures a temperature rise characteristic that is a temperature rise state of a measurement spot based on a heating time, on the basis of a detection signal from the infrared detector and detection signals from the first and second correcting laser detectors, and determines a state of a measurement object based on the measured temperature rise characteristic.
Abstract:
In a temperature measuring device (1) an IR-radiation detector (2) and a reference element (3) are provided, connected to a surface (6) of an object (7) in a heat-conducting fashion, with a first area (4) with high emissivity and a second area (5) with high reflectivity formed at the reference element (3), and the IR-radiation detector (2) is equipped for a separate detection of IR-radiation (9, 10, 11) from the first and second areas (4, 5) and a surface area (12) of the object (7). A computer (13) in the IR-radiation detector (2) is equipped to deduct a temperature measurement for the object (7), corrected for emissions and reflections from the detected IR-radiations (9, 10, 11).
Abstract:
A method for measuring the differential emissivity between two sites on the surface of a body and the temperature of the two sites. The method includes a plurality of measurements of the infrared radiation arising from each of the two sites under a number of different conditions. Some of the measurements include irradiation by external infrared radiation at a known wavelength and intensity. The infrared radiation arising from each of the sites may include emitted radiation, reflected ambient radiation, and reflected external radiation. Additionally, the temperature determined using the method described can be used to calibrate infrared imaging devices used to inspect the entire body.
Abstract:
In a process for heating, e.g., a semiconductor wafer within a processing chamber, the wafer is exposed to a flux of electromagnetic radiation from lamps energized by alternating electric current. The surface temperature of the wafer is measured, and responsively, the radiation flux is controlled. The temperature measurement procedure includes collecting radiation propagating away from the wafer in a first light-pipe probe, collecting radiation propagating toward the wafer in a second light-pipe probe, and detecting radiation collected in the respective probes. This procedure further involves determining, in the signal received from each probe, a magnitude of a time-varying component resulting from time-variations of the energizing current, and combining at least these magnitudes according to a mathematical expression from which the temperature can be inferred. At least some of the radiation collected by the second probe is collected after reflection from a diffusely reflecting surface. The second probe effectively samples this radiation from an area of the diffusely reflecting surface that subtends a solid angle .OMEGA..sub.2 at the wafer surface. The first probe effectively samples radiation from an area of the wafer that subtends a solid angle .OMEGA..sub.1 at the first probe. The radiation sampling is carried out such that .OMEGA..sub.2 is at least about .OMEGA..sub.1.