Surface condition measurement apparatus
    43.
    发明公开
    Surface condition measurement apparatus 失效
    表面条件测量装置

    公开(公告)号:EP0543326A3

    公开(公告)日:1993-11-24

    申请号:EP92119607.7

    申请日:1992-11-17

    CPC classification number: G01J5/60 G01J2005/0074

    Abstract: Radiated light with a specified wavelength from a material (21, P, 201) is detected and a first parameter corresponding to the emissivity ratio is obtained from the detection signal. Since the emissivity takes on different values according to the condition of the surface of the material, the first parameter changes depending on the surface condition of the material. There is a correlation between a physical value indicating a condition of the material surface and the first parameter. The correlation remains equivalent even if a second parameter corresponding to the physical value is used instead of the physical value itself (for example, an optical physical value such as reflectivity and absorptivity, the thickness of a film formed on the material surface, the surface roughness, and the degree of galvannealing). As an example of the parameter corresponding to the physical value, there is the logarithmic ratio between emissivities (ln ε a /ln ε b ) corresponding to the temperature in the vicinity of the surface. Therefore, a second parameter can be obtained on the basis of the correlation and a physical value can be obtained. When the emissivity or logarithmic emissivity ratio is used as the second parameter, the temperature in the vicinity of the material surface can be obtained from the second parameter and the detection signal.

    Temperature measurement device
    46.
    发明授权
    Temperature measurement device 有权
    温度测量装置

    公开(公告)号:US09494466B2

    公开(公告)日:2016-11-15

    申请号:US14169651

    申请日:2014-01-31

    Abstract: A temperature measurement device is provided with: light collection means; extraction means; optical intensity calculation means; and temperature measurement means. The light collection means collects the emission spectrum of a measurement subject. The extraction means extracts light having the wavelength of the atomic spectral lines and light having a wavelength in a wavelength region where there are no atomic spectral lines, from the emission spectrum collected by the aforementioned light collection means. The optical intensity calculation means calculates the optical intensities of the light extracted by the aforementioned extraction means. The temperature measurement means calculates the temperature of the aforementioned measurement subject, based on the intensities of the beams calculated by the aforementioned optical intensity calculation means.

    Abstract translation: 温度测量装置具有:光收集装置; 提取手段; 光强计算手段; 和温度测量装置。 光采集装置收集测量对象的发射光谱。 提取装置从由上述光收集装置收集的发射光谱中提取具有原子光谱线的波长的光和具有不存在原子光谱线的波长区域中的波长的光。 光强度计算装置计算由上述提取装置提取的光的光强度。 温度测量装置基于由上述光强度计算装置计算的光束的强度来计算上述测量对象的温度。

    Method of measuring in situ differential emissivity and temperature
    49.
    发明授权
    Method of measuring in situ differential emissivity and temperature 有权
    测量原位差分发射率和温度的方法

    公开(公告)号:US07632012B2

    公开(公告)日:2009-12-15

    申请号:US11217884

    申请日:2005-09-01

    CPC classification number: G01J5/0003 G01J5/524 G01J5/602 G01J2005/0074

    Abstract: A method for measuring the differential emissivity between two sites on the surface of a body and the temperature of the two sites. The method includes a plurality of measurements of the infrared radiation arising from each of the two sites under a number of different conditions. Some of the measurements include irradiation by external infrared radiation at a known wavelength and intensity. The infrared radiation arising from each of the sites may include emitted radiation, reflected ambient radiation, and reflected external radiation. Additionally, the temperature determined using the method described can be used to calibrate infrared imaging devices used to inspect the entire body.

    Abstract translation: 一种用于测量身体表面两个位置与两个部位的温度之间的差异发射率的方法。 该方法包括在多个不同条件下从两个位置中的每一个产生的红外辐射的多个测量。 一些测量包括以已知波长和强度的外部红外辐射照射。 从每个地点产生的红外辐射可能包括发射的辐射,反射的环境辐射和反射的外部辐射。 另外,使用所述方法确定的温度可用于校准用于检查整个身体的红外成像装置。

    Semiconductor processing technique, including pyrometric measurement of
radiantly heated bodies
    50.
    发明授权
    Semiconductor processing technique, including pyrometric measurement of radiantly heated bodies 失效
    半导体加工技术,包括辐射加热体的高温测量

    公开(公告)号:US5442727A

    公开(公告)日:1995-08-15

    申请号:US227844

    申请日:1994-04-14

    Inventor: Anthony T. Fiory

    Abstract: In a process for heating, e.g., a semiconductor wafer within a processing chamber, the wafer is exposed to a flux of electromagnetic radiation from lamps energized by alternating electric current. The surface temperature of the wafer is measured, and responsively, the radiation flux is controlled. The temperature measurement procedure includes collecting radiation propagating away from the wafer in a first light-pipe probe, collecting radiation propagating toward the wafer in a second light-pipe probe, and detecting radiation collected in the respective probes. This procedure further involves determining, in the signal received from each probe, a magnitude of a time-varying component resulting from time-variations of the energizing current, and combining at least these magnitudes according to a mathematical expression from which the temperature can be inferred. At least some of the radiation collected by the second probe is collected after reflection from a diffusely reflecting surface. The second probe effectively samples this radiation from an area of the diffusely reflecting surface that subtends a solid angle .OMEGA..sub.2 at the wafer surface. The first probe effectively samples radiation from an area of the wafer that subtends a solid angle .OMEGA..sub.1 at the first probe. The radiation sampling is carried out such that .OMEGA..sub.2 is at least about .OMEGA..sub.1.

    Abstract translation: 在加热过程中,例如处理室内的半导体晶片,晶片暴露于由交流电流激励的灯的电磁辐射通量。 测量晶片的表面温度,并且响应地控制辐射通量。 温度测量程序包括收集在第一光管探针中离开晶片传播的辐射,收集在第二光管探针中向晶片传播的辐射,以及检测在各个探针中收集的辐射。 该过程进一步包括在从每个探测器接收到的信号中确定由激励电流的时间变化导致的时变分量的幅度,并且根据可从其推断温度的数学表达式至少组合这些幅度 。 在从漫反射表面反射之后收集由第二探针收集的至少一些辐射。 第二探针有效地从漫反射表面的与晶片表面的立体角OMEGA 2相对的区域采样该辐射。 第一探针有效地从在第一探针处对准固体角度的OMEGA 1的晶片区域的辐射。 进行辐射采样使得OMEGA 2至少约为OMEGA 1。

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