Abstract:
A method for indicating static stress in an object utilising the stress dependence of the specific heat of the object by scanning the surface of the object (10) with a pulsed laser light source (12) and measuring the resulting temperature changes by means of an infra red detector (18) to provide stress information. A beam splitter (15) enables light transmission and infra red reception to be scanned simultaneously. A further laser source (20) provides three spaced beams which are transmitted through beam splitter (13) so as to impinge on the surface of the object (10) at points surrounding the instantaneous point of inspection. Reflected light from these beams is processed to give instantaneous angle of incidence information necessary to correct the infra red measurements when scanning complex objects.
Abstract:
Un procédé d'indication de l'effort statique dans un objet utilise la dépendance de l'effort de la chaleur spécifique de l'objet en balayant la surface de l'objet (10) avec une source de lumière laser pulsée (12) et en mesurant les changements résultants de la température avec un détecteur d'infrarouges (18) pour obtenir des informations sur l'effort. Un diviseur optique du faisceau (15) permet de balayer simultanément la transmission de lumière et la réception des infrarouges. Une source supplémentaire de laser (20) fournit trois rayons espacés transmis à travers le diviseur optique du faisceau (13) de façon à toucher la surface de l'objet (10) en des points entourant le point instantané d'inspection. La lumière réfléchie de ces rayons est mesurée pour donner des informations sur l'angle instantané d'incidence, nécessaires pour corriger les mesures fournies par les infrarouges lorsque l'on balaie des objets complexes.
Abstract:
Un appareil et une methode d'indication de la contrainte dans un objet (10) consiste a projeter la variation de la temperature d'une partie de la surface de l'objet lorsqu'il est soumis a une contrainte. Un detecteur a rayons infrarouges (13) detecte de faibles changements de temperature et la contrainte peut etre appliquee par charge naturelle ou par contrainte cyclique imposee par un vibrateur.
Abstract:
There is provided a sensor device to detect a force sense with a smaller and simpler mechanism. The sensor device includes: a force acting portion exposed from an opening provided on an exterior portion and attached to an inside of the exterior portion via a flexible body; a reflection space of which at least two surfaces are surrounded by a first mirror provided on an inner bottom surface of the exterior portion and a second mirror provided on a surface of the force acting portion or flexible body, the surface facing the first mirror; and a light source unit configured to emit light to the reflection space; and an imaging unit provided on the inner bottom surface of the exterior portion and configured to capture an image including a force sense detection region in which reflection light of the light emitted from the light source unit is seen.
Abstract:
A method is disclosed for measuring stress distribution generated on a structural object including two support parts and a beam part provided between the support parts. The method includes: generating first data by sensing, through a first sensing unit, of a moving object or an identification display object attached to the structural object; calculating, based on the first data, a movement duration in which the moving object moves between the support parts; generating, as second data, thermal data by sensing of a surface of the beam part through a second sensing unit; calculating a temperature change amount based on a second data group corresponding to the movement duration; and calculating a stress change amount based on the temperature change amount to calculate stress distribution based on the stress change amount.
Abstract:
A stress measurement device includes a first obtaining unit obtaining thermal data including information indicating a temperature of a measuring region, a second obtaining unit obtaining data related to stress occurring in one part of the measuring region, and a controller finding stress occurring in the measuring region from the thermal data and the data related to the stress. The controller finds, first waveform data respectively on the one part and a part other than the one part based on a change with time of the thermal data, and second waveform data based on a change with time of the data related to the stress. The controller finds, disturbance data through a deduction of the second waveform data from the first waveform data on the one part, and stress data indicating stress occurring in the part through a deduction the disturbance data from the first waveform data on the part.
Abstract:
Inspection of microelectronic devices is described using near infrared light. In one example, a dielectric material layer on a substrate is illuminated with a near infrared light beam. The substrate has at least one contact land, the dielectric material layer overlies at least a portion of the contact land, and the substrate has at least one via defined in the dielectric material layer, the via exposing at least a portion of the contact land. Reflected near infrared light is reflected from the substrate at a camera. The position of the via is determined relative to the contact land from the reflected light beam using an image processing device.
Abstract:
Prism-coupling systems and methods for characterizing large depth-of-layer waveguides formed in glass substrates are disclosed. One method includes making a first measurement after a first ion-exchange process that forms a deep region and then performing a second measurement after a second ion-exchange process that forms a shallow region. Light-blocking features are arranged relative to the prism to produce a mode spectrum where the contrast of the mode lines for the strongly coupled low-order modes is improved at the expense of loss of resolution for measuring characteristics of the shallow region. Standard techniques for determining the compressive stress, the depth of layer or the tensile strength of the shallow region are then employed. A second measurement can be made using a near-IR wavelength to measure characteristics of the deeper, first ion-exchange process. Systems and methods of measuring ion-exchanged samples using shape control are also disclosed.
Abstract:
A witness material for monitoring an environmental history of an object may include a material containing a dye of a type that fluoresces in response to actinic radiation in one or both of a shift in color and a change in intensity when subjected to a predetermined stress above a predetermined level; and the material forming a coating on one or more of an outer container for the object, an inner container for the object, a tape that is applied to an outer container for the object, a tape that is applied to an inner container for the object, a shrink wrap enclosing the object, an outer surface of the object, and an inner surface of the object.
Abstract:
Inspection of microelectronic devices is described using near infrared light. In one example, a dielectric material layer on a substrate is illuminated with a near infrared light beam. The substrate has at least one contact land, the dielectric material layer overlies at least a portion of the contact land, and the substrate has at least one via defined in the dielectric material layer, the via exposing at least a portion of the contact land. Reflected near infrared light is reflected from the substrate at a camera. The position of the via is determined relative to the contact land from the reflected light beam using an image processing device.