公开(公告)号：EP2177944B1

公开(公告)日：2017-07-19

申请号：EP09172882.4

申请日：2009-10-13

Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Inventor： Fedeli, Jean-Marc

IPC: G02F1/025 ,  H01L21/266 ,  G02B6/134

CPC classification number: G02F1/025 ,  G02B6/1347 ,  G02B6/136 ,  G02B2006/12061 ,  G02B2006/12097 ,  G02B2006/12142 ,  G02F2001/0151 ,  G02F2201/063 ,  H01L21/26513 ,  H01L21/26586

公开(公告)号：EP2845041A4

公开(公告)日：2016-03-23

申请号：EP12875835

申请日：2012-04-30

Applicant: HEWLETT PACKARD DEVELOPMENT CO

Inventor： LIANG DI

IPC: G02B6/12 ,  G02F1/025 ,  G02F1/225

CPC classification number: G02F1/2257 ,  G02B6/125 ,  G02B6/136 ,  G02B2006/12061 ,  G02B2006/12142 ,  G02B2006/12145 ,  G02B2006/12159 ,  G02F1/025 ,  G02F2001/0153 ,  G02F2001/212 ,  G02F2001/213 ,  G02F2201/063 ,  G02F2202/102 ,  G02F2202/105

公开(公告)号：EP2006723A4

公开(公告)日：2011-09-28

申请号：EP07740632

申请日：2007-03-30

Applicant: SUMITOMO OSAKA CEMENT CO LTD

Inventor： ICHIKAWA JUNICHIRO ,  YAMAMOTO FUTOSHI ,  KINPARA YUHKI ,  KONDOU KATSUTOSHI ,  OIKAWA SATOSHI

IPC: G02F1/035

CPC classification number: G02F1/0356 ,  G02F1/2255 ,  G02F2201/063 ,  G02F2201/066 ,  G02F2201/121

公开(公告)号：EP1542070A4

公开(公告)日：2008-09-03

申请号：EP03797651

申请日：2003-09-18

Applicant: NAT INST FOR MATERIALS SCIENCE

Inventor： KURIMURA S ,  HARADA MASAKI

IPC: G02F1/377 ,  G02F1/35

CPC classification number: G02F1/3544 ,  G02F2001/3509 ,  G02F2201/063

Abstract: Two grooves (10) are dice-cut along a light passing direction in a crystal dummy phase matching element (1) to thereby form a protrusion (11), held between the two grooves (10), on the upper surface side in Figures as shown in Figs. 4 (b), (c); and a ridge type waveguide (9) is formed within the protrusion. When light is allowed to pass through the waveguide (9), the light passes through a crystal axis reversal portion (polarization reversal region) (4) while being confined in the waveguide (9) to undergo wavelength conversion. A light energy can be kept high within a wavelength conversion element to ensure a high wavelength conversion efficiency.

公开(公告)号：EP1446696A1

公开(公告)日：2004-08-18

申请号：EP02795609.3

申请日：2002-11-08

Applicant: INTEL CORPORATION

Inventor： SAMARA-RUBIO, Dean

IPC: G02F1/025 ,  G02F1/313

CPC classification number: G02F1/3133 ,  G02F1/025 ,  G02F2201/063

Abstract: A semiconductor-based gain optical phase-shifting device, method and apparatus. In one aspect of the present invention, an apparatus according to an embodiment of the present invention includes a semiconductor substrate through which an optical beam is to be directed along an optical path through the semiconductor substrate. A plurality of floating charge modulated regions are disposed along the optical path. A phase of the optical beam is responsive to a charge concentration in each of the plurality of floating charge modulated regions. A plurality of tunneling insulation layers (117) are disposed between each of the plurality of floating charge modulated regions and the semiconductor substrate. A plurality of control (121) nodes are disposed proximate to the plurality of floating charge modulated regions. Each of the control nodes control the charge concentration in a respective one of the plurality of floating charge modulated regions. A plurality of blocking insulation layers (119) disposed between each of the plurality of control nodes and the plurality of floating charge modulated regions.

公开(公告)号：EP1311897A1

公开(公告)日：2003-05-21

申请号：EP01954202.6

申请日：2001-08-08

Applicant: Bookham Technology PLC

Inventor： DAY, Ian, Edward

IPC: G02F1/025

CPC classification number: G02F1/025 ,  G02F2201/063 ,  G02F2201/122 ,  G02F2202/06 ,  G02F2202/105

Abstract: An electro-optic device comprising a substrate (2, 3, 4) and an integrated optical waveguide (1) extending across the substrate (2, 3, 4), two doped regions (14, 15) being provided so that an electrical signal can be applied across the doped regions (14, 15), to alter the density of charge carriers within the waveguide (1), the doped regions (14, 15) each comprising a plurality of doped areas (14A, 14B, 14C, 14D; 15A, 15B, 15C, 15D) spaced apart from each other along the length of the wageguide (1) to improve the performance of the device by reducing the level of current between each pair (14A, 15A etc.) of doped regions.

公开(公告)号：EP0642041A1

公开(公告)日：1995-03-08

申请号：EP94401919.9

申请日：1994-08-30

Applicant: ALCATEL N.V.

Inventor： Vinchant, Jean-Francois ,  Renaud, Monique ,  Erman, Marko

IPC: G02B6/122 ,  G02F1/025 ,  G02B6/30

CPC classification number: G02B6/305 ,  G02B6/1228 ,  G02B2006/12097 ,  G02F1/025 ,  G02F2201/063

Abstract: Une structure guidante (16, 18, 20, 22) de ce composant inclut une structure de coeur (18) s'étendant jusqu'à des faces de couplage (8, 10). Elle comporte au moins trois couches à haut indice (30, 34, 38) présentant des indices de réfraction accrus par rapport aux milieux environnants (16, 32, 36, 20) pour augmenter dans ces couches la densité de puissance d'une lumière devant subir un traitement tel qu'une modulation d'amplitude. Ces couches à haut indice ont des compositions leur permettant de réaliser ce traitement en réponse à une excitation électrique tout en ayant des épaisseurs supérieures à celles de puits quantiques. Elles sont séparées par des couches de dilution (32, 36) à indice de réfraction plus faible et à épaisseurs plus grandes telles qu'un seul mode de propagation de la lumière soit guidé par la structure guidante. Ce mode présente une épaisseur adaptée à un couplage à un élément optique externe tout en confinant une majorité de la puissance de la lumière dans l'épaisseur de la structure de coeur pour favoriser le traitement.

Abstract translation: 该部件的引导结构（16,18,20,22）包括延伸到连接面（8,10）的芯结构（18）。 它由至少三个高折射率层（30,34,38）组成，折射率与周围介质（16,32,36,20）相比更高，以便在这些层中增加功率密度 必须进行诸如振幅调制的处理。 这些高折射率层具有使得它们能够响应于电激发而执行该处理，同时其厚度仍然大于量子阱的厚度。 这些层被具有较低折射率并且具有较大厚度的稀释层（32,36）分开，使得光的单一传播模式被引导结构引导。 该模式具有适于耦合到外部光学元件的厚度，同时将大部分光功率限制在芯结构的厚度中，以促进处理。

公开(公告)号：EP0526023A2

公开(公告)日：1993-02-03

申请号：EP92306352.3

申请日：1992-07-10

Applicant: NEC CORPORATION

Inventor： Komatsu, Keiro

IPC: G02F1/025 ,  G02B6/12 ,  G02F1/225 ,  G02F1/313

CPC classification number: G02F1/025 ,  G02B6/131 ,  G02F1/2257 ,  G02F1/3133 ,  G02F2001/0154 ,  G02F2201/063

Abstract: A semiconductor optical guided-wave device comprises a semiconductor substrate (101), at least one ridge type semiconductor optical waveguide formed thereon, and a pair of electrodes (108,110). The ridge (131) is formed by a selective crystal growth process. The ridge can be formed using a mask (201) having an opening (202) where the ridge is to be formed, and the crystal growth of material for forming the ridge is made by a crystal growth technology such as the MOVPE method. The mask is preferably a thin dielectric film, such as SiO₂ film. The device comprises grown layers including a first semiconductor cladding layer (102), a semiconductor guiding layer (103) and a second semiconductor cladding layer (104) grown in this order, and a ridge (131) having a third semiconductor cladding layer (105) and a semiconductor capping layer (106) laminated in this order on the second semiconductor cladding layer. The device can be formed as an optical phase modulator a directional coupler or a Mach-Zehnder type optical modulator. The device can be small with low power loss, and suitable for large-scale integration and mass production.

Abstract translation: 半导体光导波器件包括半导体衬底（101），形成在其上的至少一个脊型半导体光波导和一对电极（108,110）。 脊（131）通过选择性晶体生长过程形成。 可以使用具有要形成脊的开口（202）的掩模（201）形成脊，并且通过诸如MOVPE法的晶体生长技术来形成用于形成脊的材料的晶体生长。 掩模优选为诸如SiO 2膜的薄电介质膜。 该器件包括生长层，其包括依次生长的第一半导体覆层（102），半导体引导层（103）和第二半导体覆层（104），以及具有第三半导体覆层（105）的脊 ）和在第二半导体包层上依次层叠的半导体覆盖层（106）。 该装置可以形成为光相位调制器（图1），定向耦合器（图4）或马赫 - 曾德尔型光调制器（图7）。 该器件可以小型化，功耗低，适合大规模集成和批量生产。

公开(公告)号：EP3232255A1

公开(公告)日：2017-10-18

申请号：EP15866773.3

申请日：2015-12-08

Applicant: Nippon Telegraph and Telephone Corporation

Inventor： TSUZUKI, Ken ,  KAMEI, Shin ,  JIZODO, Makoto

IPC: G02F1/025

CPC classification number: G02F1/2257 ,  G02F1/025 ,  G02F2001/212 ,  G02F2201/063 ,  G02F2201/127

Abstract: The present invention provides an optical modulator including a substrate and a phase modulation portion on the substrate. The phase modulation portion includes an optical waveguide comprised of a first clad layer, a semiconductor layer that is laminated on the first clad layer and has a refraction index higher than the first clad layer and a second clad layer that is laminated on the semiconductor layer and has a refraction index lower than the semiconductor layer, a first traveling wave electrode, and a second traveling wave electrode. The semiconductor layer includes a rib that is formed in the optical waveguide in an optical axis direction and is a core of the optical waveguide, a first slab that is formed in the optical axis direction in one side of the rib, a second slab that is formed in the optical axis direction in the other side of the rib, a third slab that is formed in the first slab in the optical axis direction at the opposite side to the rib, and a fourth slab that is formed in the second slab in the optical axis direction at the opposite side to the rib. The first slab is formed to be thinner than the rib and the third slab, and the second slab is formed to be thinner than the rib and the fourth slab.

Abstract translation: 本发明提供一种光调制器，其包括衬底和在衬底上的相位调制部分。 相位调制部分包括由第一覆盖层，层叠在第一覆盖层上并具有高于第一覆盖层的折射率的半导体层和层叠在半导体层上的第二覆盖层组成的光波导，以及 具有比半导体层低的折射率，第一行波电极和第二行波电极。 所述半导体层包括沿光轴方向形成在所述光波导中并且是所述光波导的核心的肋，在所述肋的一侧中沿光轴方向形成的第一平板，第二平板，所述第二平板是 在所述肋的另一侧沿光轴方向形成有第三平板，所述第三平板在所述光轴方向上与所述肋相反的一侧形成在所述第一平板上，所述第四平板形成在所述第二平板中， 光轴方向与肋的相反侧。 第一板坯形成为比肋板和第三板坯薄，并且第二板坯形成为比肋板和第四板坯薄。

公开(公告)号：EP3156832A4

公开(公告)日：2017-07-12

申请号：EP14897551

申请日：2014-07-18

Applicant: HUAWEI TECH CO LTD

Inventor： MA XIAO ,  ZHANG XUECANG ,  YANG JIANYI

IPC: G02B6/35

CPC classification number: G02F1/3133 ,  G02B6/29343 ,  G02B6/29382 ,  G02B6/29395 ,  G02B6/35 ,  G02F1/0147 ,  G02F2201/063 ,  G02F2203/15

Abstract: A wavelength selective switch and a wavelength selection method are provided, where the wavelength selective switch includes: a dual-microring resonator, including a first microring (111) and a second microring (112) that are connected in series, where the first microring (111) and the second microring (112) are silicon-based microrings and respectively include one annular PN junction, and a direction of the annular PN junction of the first microring is the same as that of the annular PN junction of the second microring; an electric tuning module (120), where a first electric port of the electric tuning module (120) is connected to a P zone of the first microring (111) and an N zone of the second microring (112), a second electric port of the electric tuning module (120) is connected to an N zone of the first microring (111) and a P zone of the second microring (112), and the electric tuning module (120) is configured to apply bias voltages with reverse directions to the annular PN junction of the first microring 111 and the annular PN junction of the second microring (112); and a thermal tuning module (130), configured to adjust an operating temperature of the dual-microring resonator. The switch is suitable for a high-density integrated optical interconnection.

Abstract translation: 提供了波长选择开关和波长选择方法，其中波长选择开关包括：双微环谐振器，包括串联连接的第一微环（111）和第二微环（112），其中第一微环（ 111）和第二微环（112）为硅基微环，分别包括一个环状PN结，第一微环的环状PN结的方向与第二微环的环状PN结的方向相同; 电调谐模块（120），其中电调谐模块（120）的第一电端口连接到第一微环（111）的P区和第二微环（112）的N区，第二电端口 所述电调谐模块（120）被连接到所述第一微环（111）的N区和所述第二微环（112）的P区，并且所述电调谐模块（120）被配置为施加具有相反方向的偏置电压 到第一微环111的环形PN结和第二微环112的环形PN结; 和热调谐模块（130），被配置为调整双微环谐振器的工作温度。 该开关适用于高密度集成光学互连。