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    VOLTAGE CONTROLLED OSCILLATOR TUNING BY METAL LID APERTURE SELECTION
    43.
    发明公开
    VOLTAGE CONTROLLED OSCILLATOR TUNING BY METAL LID APERTURE SELECTION 审中-公开
    表决压控振荡器通过选择开口的金属罩

    公开(公告)号：EP1070386A1

    公开(公告)日：2001-01-24

    申请号：EP98964797.9

    申请日：1998-12-18

    Applicant: CTS Corporation

    Inventor： KNECHT, Thomas, A. ,  REESER, Glen, O.

    IPC: H03B5/12 ,  H03B5/18

    CPC classification number: H03B5/1847 ,  H03B2200/004 ,  H03B2201/014 ,  H03B2201/0208 ,  Y10T29/49004

    Abstract: A method (100) for tuning a voltage controlled oscillator by changing electrical circuit parasitics includes a first step (102) of providing a voltage controlled oscillator circuit on a circuit board and a plurality of different metal lids each having different numbers, sizes and locations of holes. Each different lid presents a different electrical circuit parasitic to the voltage controlled oscillator. In a second step (104), the voltage controlled oscillator frequency is measured, and the frequency shift needed to achieve a desired operating frequency is calculated in a third step (106). In a fourth step (108), a lid is chosen that will present the parasitics needed to provide the amount of frequency shift needed. As a last step (110), the chosen lid is attached to the circuit board to obtain the desired nominal operating frequency from the voltage controlled oscillator.

    Flip-chip MMIC resonator circuit with off-chip coplanar waveguide inductor.
    44.
    发明公开
    Flip-chip MMIC resonator circuit with off-chip coplanar waveguide inductor. 失效
    Flip-Chip-MMIC-Oszillatoranordnung mit koplanarem resonanceem Induktor auf einem separaten Chip。

    公开(公告)号：EP0495206A2

    公开(公告)日：1992-07-22

    申请号：EP91121332.0

    申请日：1991-12-12

    Applicant: Hughes Aircraft Company

    Inventor： Wen, Cheng P. ,  Mendolia, Gregory S. ,  Siracusa, Mario ,  Maieron, Joseph J. ,  Higdon, William D.

    IPC: H01P3/00 ,  H03B5/18

    CPC classification number: H03B5/1852 ,  H03B2200/0086 ,  H03B2201/011 ,  H03B2201/014 ,  H03B2201/02 ,  Y10T29/49004

    Abstract: A coplanar waveguide based microwave monolithic integrated circuit (MMIC) oscillator chip (14) has an active oscillator element (16) and a resonant capacitor (18) formed thereon and is flip-chip mounted on a dielectric substrate (12). A resonant inductor (22) is formed on the substrate (12) and interconnected with the resonant capacitor (18) to form a high Q-factor resonant circuit for the oscillator (10). The resonant inductor (22) includes a shorted coplanar waveguide section (24) consisting of first and second ground strips (24b, 24c), and a conductor strip (24a) extending between the first and second ground strips (24b, 24c) in parallel relation thereto and being separated therefrom by first and second spaces (26a, 26b), respectively. A shorting strip (24d) electrically interconnects adjacent ends of the conductor strip (24a) and first and second ground strips (24b, 24c), respectively. A dielectric film (34) may be formed over at least adjacent portions of the conductor strip (24a) and first and second ground strips (24b, 24c). The resonant inductor (22) is adjusted to provide a predetermined resonant frequency for the oscillator (10) by using a laser to remove part of the dielectric film (34) in the first and second spaces (26a, 26b) for fine adjustment, and/or to remove part of the shorting strip (24d) at the ends of the first and second spaces (26a, 26b) for coarse adjustment.

    Abstract translation: 基于共面波导的微波单片集成电路（MMIC）振荡器芯片（14）具有形成在其上的有源振荡器元件（16）和谐振电容器（18），并被倒装安装在电介质基片（12）上。 谐振电感器（22）形成在衬底（12）上并与谐振电容器（18）互连，以形成振荡器（10）的高Q因子谐振电路。 谐振电感器（22）包括由第一和第二接地条（24b，24c）组成的短路共面波导部分（24）和在第一和第二接地条（24b，24c）之间平行延伸的导体条（24a） 分别与第一和第二空间（26a，26b）分离。 短路条（24d）分别将导体条（24a）的相邻端和第一和第二接地条（24b，24c）互连。 绝缘膜（34）可以形成在导体条（24a）和第一和第二接地条（24b，24c）的至少相邻部分上。 谐振电感器（22）被调节以通过使用激光去除第一和第二空间（26a，26b）中的电介质膜（34）的一部分用于微调的振荡器（10）的预定谐振频率，以及 /或去除用于粗调的第一和第二空间（26a，26b）的端部处的部分短路条（24d）。

    Modulierbarer Transistoroszillator grosser Leistung
    46.
    发明公开
    Modulierbarer Transistoroszillator grosser Leistung 失效
    Modulierbarer Transistoroszillator grosser Leistung。

    公开(公告)号：EP0038519A1

    公开(公告)日：1981-10-28

    申请号：EP81102864.6

    申请日：1981-04-14

    Applicant: SIEMENS AKTIENGESELLSCHAFT

    Inventor： Amend, Wilhelm, Dipl.-Ing. ,  Klüh, Udo, Dipl.-Ing. ,  Pichon, Walter

    IPC: H03C3/22

    CPC classification number: H03C3/222 ,  H03B5/04 ,  H03B5/1805 ,  H03B2200/0062 ,  H03B2200/0088 ,  H03B2201/011 ,  H03B2201/014 ,  H03C2200/0008 ,  H03C2200/005 ,  H03C2200/0079

    Abstract: Die Erfindung bezieht sich auf einen modulierbaren Transistoroszillator großer Leistung für den Bereich sehr hoher Frequenzen. Bei diesem soll die modulierte Radiofrequenz in einem einstufigen Leistungsoszillator erzeugt wer - den bei einer möglichst verzerrungsfreien Erzeugung des erforderlichen Frequenzhubs bei hohem Leistungspegel des RF-Oszillators und möglichst geringem thermischen Geräusch. Die Erfindung sieht hierzu vor, daß das verstärkte Basisbandsignal über zwei Wege gleichphasig dem Oszillator zugeführt wird derart, daß einerseits über einen Vorspannungstransistor (Tr 2) die Basisvorspannung des RF-Transistors (TR 1) moduliert und andererseits über eine Modulationsdiode (22) die Frequenz des mit dem RF-Transistor (Tr 1) verbundenen Resonators (1) geändert wird. Ein erfindungsgemäßer Transistoroszillator ist insbesondere für den Einsatz in direkt modulierten Richtfunksystemen geeignet (Fig. 1).

    Abstract translation: 可调式大功率晶体管v.h.f. 振荡器具有频率确定同轴谐振器（1）和耦合到谐振器并作为公共集电极级（振荡晶体管））连接的晶体管（Tr1），其特征在于放大的基带信号被馈送到振荡晶体管（Tr1） 一方面通过经由电容器（7）连接到基带信号输入（BF）并且调制振荡晶体管（Tr1）的基极偏置电压的偏置电压晶体管（Tr2）相等地相等，以及 另一方面施加在调制二极管（22）上并改变谐振器（1）中的振荡晶体管（Tr1）的频率。

    동축 공진기를 포함하는 국부 발진 회로를 갖는 튜너 회로
    50.
    发明授权
    동축 공진기를 포함하는 국부 발진 회로를 갖는 튜너 회로 失效
    具有包括同轴谐振器的本地振荡器电路的调谐器电路

    公开(公告)号：KR100180085B1

    公开(公告)日：1999-04-01

    申请号：KR1019960045524

    申请日：1996-10-12

    Applicant: 샤프 가부시키가이샤

    Inventor： 기따구찌마사노리

    IPC: H03J5/24

    CPC classification number: H03B5/1231 ,  H03B5/1203 ,  H03B5/1243 ,  H03B2201/012 ,  H03B2201/014

    Abstract: 튜너 회로는, 제1의 IF 신호를 출력하기 위한 제1의 IF 신호 생성 회로, 국부 발진 신호를 출력하기 위한 국부 발진 회로(110)와, 제1의 IF 신호와 국부 발진 신호를 믹싱하여 제2의 IF 신호를 생성하기 위한 믹싱 회로(109)와, 적어도 국부 발진 회로가 그 위에 형성되는 제1의 기판(4)을 포함한다. 국부 발진 회로(110)는, 발진 회로(116)와, 발진 회로(116)에 접속되며 습도나 경년 변화에 의한 발진 주파수의 변화의 영향을 보정하기 위한 동축 공진기(115)를 포함한다. 동축 공진기(115)는 발진 주파수를 조정하기 위한 임피던스 가변 트리머(5)와, 제1의 기판(4)에 대하여 고정된 위치에 설치된 중심도체(1)와, 임피던스 가변 트리머(5)와 중심도체(1)와의 사이를 절연하기 위한 절연물을 포함한다. 임피던스 가변 트리머(5)와 중심도체(1)와는 절연물을 개재하여 밀착하고 있다.

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