Abstract:
A test wafer for use in wafer temperature prediction is prepared. The test wafer includes: first semiconductor layer formed in a crystalline state; second semiconductor layer formed in an amorphous state on the first semiconductor layer; and light absorption film formed over the second semiconductor layer. Next, the test wafer is loaded into a lamp heating system and then irradiating the test wafer with a light emitted from the lamp, thereby heating the second semiconductor layer through the light absorption film. Thereafter, a recovery rate, at which a part of the second semiconductor layer recovers from the amorphous state to the crystalline state at the interface with the first semiconductor layer, is calculated. Then, a temperature of the test wafer that has been irradiated with the light is measured according to a relationship between the recovery rate and a temperature corresponding to the recovery rate.
Abstract:
A method of temperature measurement for measuring a temperature of an object to be measured that is heated by a heating source in a multiplex-reflection environment by using two radiation thermometers provided at a measurement part separated from the object to be measured is provided. In the method, two of the radiation thermometers have a rod that is embedded in the measurement part and can receive radiation light from the object to be measured, and an optical fiber connected to the rod; numerical apertures of the radiation thermometers are different; the multiplex-reflection environment is formed between a surface of the measurement part facing the object to be measured and the measurement part; a radiation rate null of the object to be measured based on a result of a measurement of two of the thermometers and the temperature of the object to be measured is calculated by the following equations nullnull1null(1nullNAnullN1)N2/(D1/D2) nulleffnull(1nullnull)nullnullnullnullnullnull/null1nullFnullrnull(1nullnull)nullwherein D1 represents a diameter of the rod of the radiation thermometers, NA represents the numerical aperture, D2 represents a distance between the object to be measured and the surface of the measurement part, r represents a reflectivity of the surface of the measurement part, F represents a view factor, null represents a multiplex reflection coefficient, nulleff represents an effective radiation rate of the object to be measured, and N1 and N2 are parameters.
Abstract:
Method and apparatus for measuring a surface temperature of an object body, by calculating a temperature at each picture element of an image of the object body, on the basis of a radiant intensity ratio at each pair of corresponding picture elements of a first and a second image which are obtained with respective radiations having respective first and second wavelengths which are selected from a light emitted from the surface of the body, by a first filter which permits transmission therethrough a radiation having the first wavelength which is selected according to a radiant-intensity curve corresponding to a wavelength of a black body at a lower limit of a temperature measurement range, and which is within a high radiant-intensity range in which the radiant intensity is higher than a radiant intensity at a normal room temperature, and a second filter which permits transmission therethrough a radiation having the second wavelength which is selected within the high radiant-intensity range, such that the second wavelength is different from the first wavelength by a predetermined difference which is not larger than {fraction (1/12)} of the first wavelength and which is not smaller than a sum of half widths of the first and second wavelengths.
Abstract:
At the time when a temperature of a semiconductor wafer or the like is measured by light without contacting to it, its temperature is measured with high precision without suffering from an influence of changes in temperature of a light source, an influence of a bent degree or the like of an optical fiber or an influence of a displacement of an optical system such as a lens or the like. Light output from the light source is irradiated to the semiconductor wafer through an optical fiber for irradiated light. The light reflected from the semiconductor wafer is output as reflected light through an optical fiber for the reflected light. An optical fiber for reference light having substantially the same route as those of the optical fiber for irradiated light and the optical fiber for reflected light is disposed. The light output from the light source is output as the reference light through the optical fiber for reference light without being irradiated to or reflected from the semiconductor wafer. And, a temperature of the semiconductor wafer is measured according to the reflected light output from the optical fiber for reflected light and the reference light output from the optical fiber for reference light.
Abstract:
A lighting system for night vision applications including a near infrared light source, a visible light source, a beamsplitter and an optical element. The beamsplitter is arranged to reflect light emitting from either the near infrared light source or the visible light source and transmit light emitting from the other of the near infrared light source or visible light source so as to produce a color-corrected light source. The optical element is disposed a predetermined distance from the color-corrected light source. The optical element includes an input surface for receiving light from the color-corrected light source and an output surface for emitting the received light in a desired emission pattern. In one embodiment, each of the near infrared light source and visible light source is associated with respective first and second optical elements. The first and second optical elements are arranged such that the emission patterns of each optical element are substantially identical and overlapping to form a single color-corrected light emission pattern.
Abstract:
An infrared sensor includes a stem, a thermopile element disposed on a component-mounting surface of the stem, a case for covering the thermopile element, an inner cap that covers the thermopile element in order to shield infrared rays generated by secondary emission from an inside surface of the case, and a thermo-sensing element disposed inside the inner cap. In the infrared sensor, the case includes an infrared ray transmitting window for transmitting infrared rays radiating from an object. The inner cap is thermally coupled to the stem by being disposed on the component-mounting surface of the stem, and includes an opening for passing the infrared rays from the infrared ray transmitting window of the case towards the thermopile element. The thermopile element is disposed inside a recess in the component-mounting surface or so as to be substantially surrounded by a highly thermally conductive substrate disposed on the component-mounting surface.
Abstract:
A temperature sensor utilizing optical temperature measuring techniques is constructed to make firm contact with a surface whose temperature is being measured, an example application being the monitoring of semiconductor wafers or flat panel displays while being processed. A cap is mounted near but spaced apart from an end of a lightwave guide, with a resilient element that applies force of the cap against a surface whose temperature is being measured as the cap is urged toward the optical fiber end. An optical temperature sensing element, such as luminescent material or a surface of known emissivity, is carried within the cap. A bellows with a closed end conveniently serves as both the cap and the resilient element. An alternative temperature measuring device installs an optical temperature sensing material within a test substrate behind an optical window, and then views the sensing material through the window.
Abstract:
In a visible/infrared imaging camera comprising lightwave separating means for separating light into visible and infrared light components, and visible and infrared light camera units for capturing visible and infrared light images formed by the visible and infrared light components, respectively, the infrared light camera unit is supported so as to be movable axially of the infrared light component emitted from the lightwave separating means, thereby adjusting the focusing of the infrared light image.
Abstract:
A thermal infrared detector has a substrate having a readout circuit and a plurality of pixels patterned on the substrate at a pitch p in the range of 15nullpnull50 (nullm). Each of the pixels has a photo-sensitive area including a thin film of bolometer and spaced from the substrate, two beams by which the photo-sensitive area is supported on the substrate, and interconnections formed respectively on the beams and connecting the readout circuit and the thin film of bolometer to each other. The length of each of the beams is determined in view of the patterning accuracy of a stepper used to produce the thermal infrared detector, based on the beam length index which is calculated by dividing the length of each of the beams by one-quarter of the peripheral length of the pixel. The beam length index is given by an approximate expression using the pixel pitch as a parameter, determined depending on the thermal conductivity of the interconnection material, etc. based on an equation representing temperature resolution.
Abstract:
Microbolometer circuitry and methods are disclosed to allow an individual microbolometer or groups of microbolometers, such as a microbolometer focal plane array, to operate over a wide temperature range. Temperature compensation is provided, such as through circuitry and/or calibration methods, to reduce non-uniform behavior over the desired operating temperatures. For example, the relative mismatch in the temperature coefficient of resistance of an active microbolometer and a reference microbolometer is compensated by employing a variable resistor in series with the active microbolometer. The variable resistor can be calibrated over the desired temperature range to minimize the affect of the relative mismatch. Various other circuit implementations, calibration methods, and processing of the microbolometer circuit output can be employed to provide further compensation.