Abstract:
Methods and apparatus are provided for generating oxygen ions in an ion source having an arc chamber containing at least one oxidizable metal. The method includes the steps of feeding gaseous H2O into the arc chamber and operating the arc chamber in a temperature range where the free energy of formation of gaseous H2O is less than the free energy of formation of oxides of the oxidizable metal.
Abstract:
An electrospray apparatus employing multiple electrospray needles mounted in a circular arrangement sequentially delivers multiple sample streams to a mass spectrometer for analysis. One electrospray device includes an electrospray chamber, a rotatable needle supporting plate, a plurality of electrospray needles mounted on the plate, and a charger for applying a charge to droplets delivered to the electrospray chamber by the needles. Another electrospray device includes an electrospray chamber, a plurality of electrospray needles arranged in a circular arrangement, a charger, and a rotatable member for delivering gas phase ions from one needle at a time to the mass spectrometer. The rotatable electrospray apparatus provides fast repetitive analysis of simultaneously operating chromatography columns or other sample streams with a single mass spectrometer.
Abstract:
Ion implantation equipment is modified so as to provide a support ring between the filament and the cathode where it can continue its function of insulating the filament, thereby greatly extending the lifetime and reducing downtime of the equipment. According to the present invention, apparatus for preventing the short circuit of a filament of a source head to a cathode, comprising: an arc chamber, having an opening; a cathode tube, through the opening of the arc chamber extending in the arc chamber, one end of the cathode tube having a hollow, the hollow facing outside of the arc chamber; an isolated support ring, locating in the hollow's sidewall of the cathode tube; and a filament, through the isolated support ring locating in the cathode tube.
Abstract:
There is disclosed a black-level signal generation circuit for use with a CMOS-based active pixel image sensor. This black-level signal generation circuit delivers a black-level signal of a constant level at all times. The black-level signal generation circuit is equivalent in circuit configuration to any one of pixels forming an effective pixel array and any one of readout portions for reading out signals from the pixels. A photodiode is maintained in a reset state. MOS transistors whose corresponding MOS transistors are turned nullON/OFFnull in any one of the pixels and any one of the readout portions are all kept in nullONnull state. Thus, the black-level signal generation circuit can constantly produce a black-level signal equivalent in level to the pixel signal delivered when no light is incident on the effective pixels.
Abstract:
The present invention provides an improved electron ionizer for use in a quadrupole mass spectrometer. The improved electron ionizer includes a repeller plate that ejects sample atoms or molecules, an ionizer chamber, a cathode that emits an electron beam into the ionizer chamber, an exit opening for excess electrons to escape, at least one shim plate to collimate said electron beam, extraction apertures, and a plurality of lens elements for focusing the extracted ions onto entrance apertures.
Abstract:
An organic field ionization source is provided including an ionization needle, an extraction electrode, a voltage source, and a heated reservoir. The ionization needle defines a tip. The extraction electrode defines an extraction aperture therein and the extraction electrode is positioned such that the extraction aperture is disposed proximate the tip of the ionization needle. The voltage source is arranged to maintain the tip of the ionization needle at a high potential relative to the extraction electrode. The heated reservoir contains an organic ion source material therein in contact with the ionization needle. The heated reservoir is arranged to maintain a temperature of the organic ion source material at a magnitude sufficient to encourage capillary flow of the organic ion source material from the heated reservoir along the ionization needle to the tip of the needle. The high potential, the extraction electrode, the tip of the ionization needle, and the organic ion source material are selected and arranged such that the organic material is ionized at the tip of the needle and such that organic ions are drawn through the extraction aperture from the tip of the needle. The organic ion source material preferably comprises coronene, phenylalanine, a vacuum grease, a diffusion pump oil, or another organic material with a high boiling point.
Abstract:
Various aspects of the invention provide improved approaches and methods for efficiently: Vaporizing decaborane and other heat-sensitive materials via a novel vaporizer and vapor delivery system; Delivering a controlled, low-pressure drop flow of vapors, e.g. decaborane, into the ion source; Ionizing the decaborane into a large fraction of B10Hxnull; Preventing thermal dissociation of decaborane; Limiting charge-exchange and low energy electron-induced fragmentation of B10Hxnull; Operating the ion source without an arc plasma, which can improve the emittance properties and the purity of the beam; Operating the ion source without use of a strong applied magnetic field, which can improve the emittance properties of the beam; Using a novel approach to produce electron impact ionizations without the use of an arc discharge, by incorporation of an externally generated, broad directional electron beam which is aligned to pass through the ionization chamber to a thermally isolated beam dump; Providing production-worthy dosage rates of boron dopant at the wafer; Providing a hardware design that enables use also with other dopants, especially using novel hydride, dimer-containing, and indium- or antimony-containing temperature-sensitive starting materials, to further enhance the economics of use and production worthiness of the novel source design and in many cases, reducing the presence of contaminants; Matching the ion optics requirements of the installed base of ion implanters in the field; Eliminating the ion source as a source of transition metals contamination, by using an external and preferably remote cathode and providing an ionization chamber and extraction aperture fabricated of non-contaminating material, e.g. graphite, silicon carbide or aluminum; Enabling retrofit of the new ion source into the ion source design space of existing Bernas source-based ion implanters and the like or otherwise enabling compatibility with other ion source designs; Using a control system in retrofit installations that enables retention of the installed operator interface and control techniques with which operators are already familiar; Enabling convenient handling and replenishment of the solid within the vaporizer without substantial down-time of the implanter; Providing internal adjustment and control techniques that enable, with a single design, matching the dimensions and intensity of the zone in which ionization occurs to the beam line of the implanter and the requirement of the process at hand; Providing novel approaches, starting materials and conditions of operation that enable the making of future generations of semiconductor devices and especially CMOS source/drains and extensions, and doping of silicon gates.
Abstract:
A radio-frequency quadrupole ion guide having a symmetrical magnetic field disposed along an axis of the ion guide, wherein the system provides prolonged interaction between electrons and uncharged compounds within an ionization volume of the ion guide, resulting in enhanced ion creation.
Abstract:
An ion source includes a plasma producing device, an ion deriving electrode having a first grid with a positive potential and a second grid with negative potential for deriving ions from a plasma producing area of the plasma producing device, and a communicating portion communicating the plasma area with an outside thereof for removing an influence of the negative potential of the second grid with respect to electrons from the plasma producing area.