Abstract:
PROBLEM TO BE SOLVED: To inexpensively provide a fused quartz glass capable of being preferably used for preparing various optical materials utilizing ultraviolet ray, visible light and infrared ray, a member for producing a semiconductor, a member for producing a liquid crystal, a member for producing MEMS(micro-electro-mechanical system), and a glass substrate for the liquid crystal, and having high permeability of ultraviolet ray, visible light and infrared ray, high purity, high heat resistance, and a low diffusion velocity of Cu ions. SOLUTION: The fused quartz glass has an internal transmittance of not less than 95% for ultraviolet ray of 245 nm wavelength at 10 mm depth, a viscosity coefficient at 1,215°C of not less than 10 12.0 Pa s, a Cu ion diffusion coefficient in a depth of 20-100 μm from the surface in Cu ion heat diffusion in the atmosphere at 1,050°C of not greater than 1×10 -10 cm 2 /sec, an OH content of not grater than 5 ppm, a Li, Na, K, Mg, Ca and Cu content of each less than 0.1 ppm, and preferably contains 2 ppm of Al by weight ratio. The fused quartz glass can be obtained by converting a raw material silica powder to cristobalite in advance and thereafter fusing the same in a non-reducing atmosphere. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide synthetic quartz glass for vacuum UV light which has excellent homogeneity to irradiation with vacuum UV light and is excellent in the durability to the irradiation with the vacuum UV light, a method for manufacturing the same and a mask substrate for the vacuum UV light using the same. SOLUTION: The highly homogeneous synthetic quartz glass for the vacuum UV light characterized in that the internal transmittance to the vacuum UV light of a wavelength 157 nm is >=60% per 1 cm; the difference between the maximum refractive index and minimum refractive index in a region of 200 mm diameter is per 1 cm; a birefringence quantity is shots of the vacuum UV light of the wavelength 157 nm at an energy density of 10 mJ/cm is and the change in the birefringence quantity is
Abstract:
PROBLEM TO BE SOLVED: To provide quartz glass excellent in ultraviolet ray absorption property, visible light transmittance, resistance to devitrification, and thermal resistance, and to provide a method for manufacturing the same. SOLUTION: The quartz glass is characterized in that the content of OH groups is ≤1 ppm, the content of H 2 is ≤1×10 17 /cm 3 , the content of Cl is ≤10 ppm, the total content of metal impurities is ≤10 ppm, the transmittance per thickness of 1 cm in a wavelength region of ≤230 nm is ≤5%, and the transmittance per thickness of 1 cm in a wavelength region of ≥300 nm is ≥80%. The quartz glass can be obtained by a process comprising hydrolyzing a glass forming raw material in oxyhydrogen flame, forming a porous silica body (soot body) by depositing formed silica particulates on a target, subjecting the obtained soot body to heat treatment in an atmosphere containing gaseous hydrogen, and transparently vitrifying so as to obtain transparent quartz glass, and by irradiating the obtained transparent quartz glass with X-ray or γ-ray of an irradiation dose of ≥4×10 4 C/kg. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a silica glass, used for a semiconductor container, a tool, a bell jar for a plasma etcher, and the like, which has plasma resistance, particularly sufficient durability to fluorine plasma such as CF 4 /Ar/O 2 plasma, is free from metal contamination and has high viscosity at high temperatures, and to provide a method for producing the same and apparatuses for manufacturing a semiconductor or a liquid crystal comprising the plasma corrosion resisting silica glass. SOLUTION: The plasma corrosion resisting silica glass essentially comprising SiO 2 as a glass forming substance comprises aluminum in an amount from more than 10 atomic % to 20 atomic %. The method for producing the plasma corrosion resisting silica glass and apparatuses using the same are provided. COPYRIGHT: (C)2004,JPO
Abstract translation:解决方案:提供一种用于半导体容器的石英玻璃,用于等离子体蚀刻器的工具,钟罩,等离子体电阻,特别是足够的氟等离子体的耐久性,例如CF 3, SB> 4 SB> / Ar / O 2 SB>等离子体,没有金属污染,并且在高温下具有高粘度,并且提供其制造方法以及用于制造半导体的装置 包含等离子体耐腐蚀石英玻璃的液晶。 基本上包含作为玻璃形成物质的SiO 2 SB的等离子体耐蚀性硅玻璃包含大于10原子%至20原子%的量的铝。 提供了等离子体耐蚀石英玻璃的制造方法和使用其的装置。 版权所有(C)2004,JPO