SYSTEMS AND METHODS FOR EFFICIENT COLLECTION OF SINGLE CELLS AND COLONIES OF CELLS AND FAST GENERATION OF STABLE TRANSFECTANTS
    51.
    发明申请
    SYSTEMS AND METHODS FOR EFFICIENT COLLECTION OF SINGLE CELLS AND COLONIES OF CELLS AND FAST GENERATION OF STABLE TRANSFECTANTS 有权
    有效收集单细胞和细胞群的系统和方法以及快速生成稳定转录因子

    公开(公告)号:US20070238122A1

    公开(公告)日:2007-10-11

    申请号:US11733053

    申请日:2007-04-09

    Abstract: A plate manufactured to enable samples of cells, micro-organisms, proteins, DNA, biomolecules and other biological media to be positioned at specific locations or sites on the plate for the purpose of performing addressable analyses on the samples. Preferably, some or all of the sites are built from a removable material or as pallets so that a subset of the samples of interest can be readily isolated from the plate for further processing or analysis. The plate can contain structures or chemical treatments that enhance or promote the attachment and/or function of the samples, and that promote or assist in their analyses. Use of the plate advantageously enables the selection and sorting of cells based on dynamic phenomena and the rapid establishment of stable tranfectants.

    Abstract translation: 制造的板可使细胞,微生物,蛋白质,DNA,生物分子和其他生物培养基的样品定位在板上的特定位置或位点,以便对样品进行可寻址分析。 优选地,一些或所有的部位由可移除的材料或托盘构建,使得感兴趣的样品的子集可以容易地与板分离以用于进一步的处理或分析。 该板可以包含增强或促进样品的附着和/或功能的结构或化学处理,并且促进或辅助其分析。 板的使用有利于基于动态现象和快速建立稳定的转染剂来选择和分选细胞。

    ESD PROTECTION CIRCUITS FOR RF INPUT PINS
    52.
    发明申请
    ESD PROTECTION CIRCUITS FOR RF INPUT PINS 有权
    射频输入引脚的ESD保护电路

    公开(公告)号:US20070070564A1

    公开(公告)日:2007-03-29

    申请号:US11533330

    申请日:2006-09-19

    CPC classification number: H03F1/52 H01L27/0255 H03F3/3435 H03F2200/444

    Abstract: Improved protection circuits are provided for use as voltage overload protection circuits, ESD protection circuits for RF input pins, and unit protection cells for distributed amplifiers. Preferably, the protection circuits include a positive threshold voltage trigger used to trigger a switch wherein the trigger includes a diode string in series with a resistor and the switch includes a bipolar transistor switch in series with a single reverse diode. Alternatively, the trigger includes a diode string in series with a single diode and a single resistor, and is used to trigger a Darlington pair transistor switch in series with a single reverse diode. In another embodiment, a Darlington pair transistor switch is triggered by a capacitor. In use with distributive amplifiers, the ESD protection circuits are preferably absorbed inside the artificial transmission lines of the distributed amplifier.

    Abstract translation: 提供改进的保护电路用作电压过载保护电路,RF输入引脚的ESD保护电路和用于分布式放大器的单元保护单元。 优选地,保护电路包括用于触发开关的正阈值电压触发器,其中触发器包括与电阻器串联的二极管串,并且开关包括与单个反向二极管串联的双极晶体管开关。 或者,触发器包括与单个二极管和单个电阻器串联的二极管串,并且用于与单个反向二极管串联触发达林顿对晶体管开关。 在另一个实施例中,达林顿对晶体管开关由电容器触发。 与分布放大器一起使用时,ESD保护电路优选地被吸收在分布式放大器的人造传输线内部。

    VOLTAGE OVERLOAD PROTECTION CIRCUITS
    53.
    发明申请
    VOLTAGE OVERLOAD PROTECTION CIRCUITS 有权
    电压过载保护电路

    公开(公告)号:US20070070563A1

    公开(公告)日:2007-03-29

    申请号:US11533328

    申请日:2006-09-19

    CPC classification number: H03F1/52 H01L27/0255 H03F3/3435 H03F2200/444

    Abstract: Improved protection circuits are provided for use as voltage overload protection circuits, ESD protection circuits for RF input pins, and unit protection cells for distributed amplifiers. Preferably, the protection circuits include a positive threshold voltage trigger used to trigger a switch wherein the trigger includes a diode string in series with a resistor and the switch includes a bipolar transistor switch in series with a single reverse diode. Alternatively, the trigger includes a diode string in series with a single diode and a single resistor, and is used to trigger a Darlington pair transistor switch in series with a single reverse diode. In another embodiment, a Darlington pair transistor switch is triggered by a capacitor. In use with distributive amplifiers, the ESD protection circuits are preferably absorbed inside the artificial transmission lines of the distributed amplifier.

    Abstract translation: 提供改进的保护电路用作电压过载保护电路,RF输入引脚的ESD保护电路和用于分布式放大器的单元保护单元。 优选地,保护电路包括用于触发开关的正阈值电压触发器,其中触发器包括与电阻器串联的二极管串,并且开关包括与单个反向二极管串联的双极晶体管开关。 或者,触发器包括与单个二极管和单个电阻器串联的二极管串,并且用于与单个反向二极管串联触发达林顿对晶体管开关。 在另一个实施例中,达林顿对晶体管开关由电容器触发。 与分布放大器一起使用时,ESD保护电路优选地被吸收在分布式放大器的人造传输线内部。

    ESD UNIT PROTECTION CELL FOR DISTRIBUTED AMPLIFIERS
    54.
    发明申请
    ESD UNIT PROTECTION CELL FOR DISTRIBUTED AMPLIFIERS 有权
    用于分布式放大器的ESD单元保护单元

    公开(公告)号:US20070070562A1

    公开(公告)日:2007-03-29

    申请号:US11533325

    申请日:2006-09-19

    Abstract: Improved protection circuits are provided for use as voltage overload protection circuits, ESD protection circuits for RF input pins, and unit protection cells for distributed amplifiers. Preferably, the protection circuits include a positive threshold voltage trigger used to trigger a switch wherein the trigger includes a diode string in series with a resistor and the switch includes a bipolar transistor switch in series with a single reverse diode. Alternatively, the trigger includes a diode string in series with a single diode and a single resistor, and is used to trigger a Darlington pair transistor switch in series with a single reverse diode. In another embodiment, a Darlington pair transistor switch is triggered by a capacitor. In use with distributive amplifiers, the ESD protection circuits are preferably absorbed inside the artificial transmission lines of the distributed amplifier.

    Abstract translation: 提供改进的保护电路用作电压过载保护电路,RF输入引脚的ESD保护电路和用于分布式放大器的单元保护单元。 优选地,保护电路包括用于触发开关的正阈值电压触发器,其中触发器包括与电阻器串联的二极管串,并且开关包括与单个反向二极管串联的双极晶体管开关。 或者,触发器包括与单个二极管和单个电阻器串联的二极管串,并且用于与单个反向二极管串联触发达林顿对晶体管开关。 在另一个实施例中,达林顿对晶体管开关由电容器触发。 与分布放大器一起使用时,ESD保护电路优选地被吸收在分布式放大器的人造传输线内部。

    MEMS Fabrication on a Laminated substrate
    56.
    发明申请
    MEMS Fabrication on a Laminated substrate 有权
    层压基板上的MEMS制造

    公开(公告)号:US20060238951A1

    公开(公告)日:2006-10-26

    申请号:US11428446

    申请日:2006-07-03

    CPC classification number: H01Q1/38

    Abstract: Systems and methods are provided that facilitate the formation of micro-mechanical structures and related systems on a laminated substrate. More particularly, a micro-mechanical device and a three-dimensional multiple frequency antenna are provided for in which the micro-mechanical device and antenna, as well as additional components, can be fabricated together concurrently on the same laminated substrate. The fabrication process includes a low temperature disposition process allowing for deposition of an insulator material at a temperature below the maximum operating temperature of the laminated substrate, as well as a planarization process allowing for the molding and planarizing of a polymer layer to be used as a form for a micro-mechanical device.

    Abstract translation: 提供了有助于在层压基板上形成微机械结构和相关系统的系统和方法。 更具体地,提供了微机械装置和三维多频天线,其中微机械装置和天线以及附加部件可以在同一叠层基板上同时制造在一起。 该制造工艺包括一种低温配置工艺,其允许在低于层合基板的最大工作温度的温度下沉积绝缘体材料,以及允许将聚合物层的模制和平面化用作为 形式用于微机械装置。

    Compensation units for reducing the effects of self-heating and increasing linear performance in bipolar transistors
    58.
    发明申请
    Compensation units for reducing the effects of self-heating and increasing linear performance in bipolar transistors 有权
    用于减少双极型晶体管的自加热效应和线性性能的补偿单元

    公开(公告)号:US20050225395A1

    公开(公告)日:2005-10-13

    申请号:US11087068

    申请日:2005-03-21

    CPC classification number: H03F1/52

    Abstract: The systems and methods described herein provide for composite transistor circuit having a bipolar transistor and a compensation unit. The compensation unit can be configured to stabilize the DC biasing point of the bipolar transistor. The compensation unit can compensate for the self-heating effect in the bipolar transistor and/or improve the linear performance of the bipolar transistor. The compensation unit can include a nonlinear resistor in series with a switch and can be configured to increase the base current into the bipolar transistor as the output voltage of the circuit increases.

    Abstract translation: 本文所述的系统和方法提供了具有双极晶体管和补偿单元的复合晶体管电路。 补偿单元可被配置为稳定双极晶体管的直流偏置点。 补偿单元可以补偿双极晶体管中的自发热效应和/或改善双极晶体管的线性性能。 补偿单元可以包括与开关串联的非线性电阻器,并且可以被配置成随着电路的输出电压增加而增加进入双极晶体管的基极电流。

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