公开(公告)号：US08569966B2

公开(公告)日：2013-10-29

申请号：US13302075

申请日：2011-11-22

Applicant: Nitin Kumar ,  Shashank Bakre ,  Markus Ziegler

Inventor： Nitin Kumar ,  Shashank Bakre ,  Markus Ziegler

IPC: H05B37/02 ,  H05B41/36

CPC classification number: H05B41/042 ,  H05B41/2806 ,  Y02B20/22

Abstract: A ballast to energize a lamp is provided. The ballast comprises a buck converter connected to an inverter via a switching component. The buck converter includes a transistor, a capacitor, a diode, and an inductor. The switching component has a predetermined breakover voltage value and is configured to provide a start up signal to the inverter when voltage at the switching component increases to the predetermined breakover voltage value. A control circuit is configured to monitor the voltage at the switching component while the voltage at the switching component increases to the predetermined breakover voltage, and is configured to generate a gate drive pulse at a gate terminal of the transistor when the voltage at the switching component reaches a predetermined voltage that is less than the breakover voltage of the switching component.

Abstract translation: 提供了一个用于激励灯的镇流器。 镇流器包括通过开关部件连接到逆变器的降压转换器。 降压转换器包括晶体管，电容器，二极管和电感器。 开关部件具有预定的分解电压值，并且被配置为当开关部件的电压增加到预定的转折电压值时，向逆变器提供启动信号。 控制电路被配置为在切换部件处的电压升高到预定的断开电压时监视开关部件的电压，并且被配置为当开关部件的电压为阈值时，在晶体管的栅极端产生栅极驱动脉冲 达到小于开关部件的断流电压的预定电压。

公开(公告)号：US08559414B2

公开(公告)日：2013-10-15

申请号：US13031188

申请日：2011-02-19

Applicant: Selma Yilmaz ,  Keyur Patel ,  Nitin Kumar ,  Robert Raszuk ,  Satish Mynam

Inventor： Selma Yilmaz ,  Keyur Patel ,  Nitin Kumar ,  Robert Raszuk ,  Satish Mynam

IPC: H04L12/28

CPC classification number: H04L45/123 ,  H04L45/02 ,  H04L45/04 ,  H04L45/12 ,  H04L45/42 ,  H04L45/52

Abstract: In an embodiment, a method comprises receiving a path advertisement comprising information about an available path and a well-known community value associated with the available path. A modified best path calculation is performed in response to receiving the available path either from a higher-ranked device or from a device that is not participating in diverse path calculation, resulting in creating a particular best path. The particular best path is advertised to other routers with or without a restriction indicator based on whether it is a client learned path or non-client iBGP peer learned path and based on whether the advertisement is directed to a client or a non-client iBGP peer.

Abstract translation: 在一个实施例中，一种方法包括接收包括关于可用路径的信息和与可用路径相关联的公知社区值的路径通告。 响应于从更高排名的设备或不参与不同路径计算的设备接收可用路径而执行修改的最佳路径计算，导致创建特定的最佳路径。 根据客户端学习路径还是非客户端iBGP对等体学习路径，并根据广告是指向客户端还是非客户端iBGP对等体，将特定最佳路径通告给具有或不具有限制指示符的其他路由器 。

公开(公告)号：US08476107B2

公开(公告)日：2013-07-02

申请号：US13096719

申请日：2011-04-28

Applicant: Nitin Kumar ,  Chi-I Lang ,  Tony Chiang ,  Zhi-Wen Sun ,  Jinhong Tong

Inventor： Nitin Kumar ,  Chi-I Lang ,  Tony Chiang ,  Zhi-Wen Sun ,  Jinhong Tong

IPC: H01L21/00

CPC classification number: H01L45/145 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1633

Abstract: Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.

公开(公告)号：US20120206059A1

公开(公告)日：2012-08-16

申请号：US13024443

申请日：2011-02-10

Applicant: Nitin Kumar ,  Shashank Bakre ,  Thomas J. Schalton

Inventor： Nitin Kumar ,  Shashank Bakre ,  Thomas J. Schalton

IPC: H05B41/24

CPC classification number: H05B41/2827 ,  H02M7/53832 ,  H05B41/42 ,  Y02B20/185

Abstract: A two level lighting ballast is provided, which includes a self-oscillating inverter circuit and a control circuit. The inverter includes an input; an output to selectively provide current to energize a lamp; a switching circuit operating at a switching frequency; a feedback transformer; and an impedance component. The feedback transformer is connected to the output, and drives the switching circuit based on the lamp current. The impedance component is connected in parallel with the feedback transformer, and is operated by the control circuit. When the control circuit enables the impedance component, the switching circuit operates in a first frequency range, and a first lamp current is provided. When the control circuit disables the impedance component, the switching circuit operates in a second frequency range, and a second lamp current is provided. The first frequency range is lower than the second, and the first lamp current is greater than the second.

Abstract translation: 提供了两级照明镇流器，其包括自振荡逆变器电路和控制电路。 逆变器包括一个输入端; 输出以选择性地提供电流以激励灯; 以开关频率工作的开关电路; 反馈变压器; 和阻抗分量。 反馈变压器连接到输出，并根据灯电流驱动开关电路。 阻抗元件与反馈变压器并联，由控制电路工作。 当控制电路使能阻抗分量时，开关电路在第一频率范围内工作，并提供第一灯电流。 当控制电路禁止阻抗分量时，开关电路在第二频率范围内工作，并提供第二灯电流。 第一个频率范围低于第二个频率范围，第一个灯电流大于第二个。

公开(公告)号：US20110228793A1

公开(公告)日：2011-09-22

申请号：US12726687

申请日：2010-03-18

Applicant: Sandeep BAJAJ ,  Murtuza ATTARWALA ,  Nitin KUMAR ,  David HAHM

Inventor： Sandeep BAJAJ ,  Murtuza ATTARWALA ,  Nitin KUMAR ,  David HAHM

IPC: H04L12/56 ,  G06F15/16 ,  H04L12/54

CPC classification number: H04L49/25 ,  H04L49/1515 ,  H04L63/0227

Abstract: A network device component receives traffic, determines whether the traffic is host bound traffic or non-host bound traffic, and classifies, based on a user-defined classification scheme, the traffic when the traffic is host bound traffic. The network device component also assigns, based on the classification, the classified host bound traffic to a queue associated with network device component for forwarding the classified host bound traffic to a host component of the network device.

Abstract translation: 网络设备组件接收流量，确定流量是主机绑定流量还是非主机绑定流量，并根据用户定义的分类方案对流量进行主机绑定流量分类。 网络设备组件还基于分类将分类的主机绑定业务分配给与网络设备组件相关联的队列，用于将分类的主机绑定业务转发到网络设备的主机组件。

公开(公告)号：US20110201149A1

公开(公告)日：2011-08-18

申请号：US13096719

申请日：2011-04-28

Applicant: Nitin Kumar ,  Chi-I Lang ,  Tony Chiang ,  Zhi-wen Sun ,  Jinhong Tong

Inventor： Nitin Kumar ,  Chi-I Lang ,  Tony Chiang ,  Zhi-wen Sun ,  Jinhong Tong

IPC: H01L21/8239

CPC classification number: H01L45/145 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1633

Abstract: Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.

Abstract translation: 提供电阻式开关存储器元件，其可以包含由无电金属形成的化学金属电极和金属氧化物。 电阻式开关存储器元件可以表现出双稳态，并且可以用于高密度多层存储器集成电路中。 诸如镍基材料的无电导电材料可以选择性地沉积在硅晶片或其它合适的衬底上的导体上。 无电导电材料可以被氧化以形成用于电阻式开关存储元件的金属氧化物。 可以沉积多层导电材料，每层具有不同的氧化速率。 可以利用导电层的差异氧化速率来确保在制造期间形成所需厚度的金属氧化物层。

公开(公告)号：US07972897B2

公开(公告)日：2011-07-05

申请号：US11702966

申请日：2007-02-05

Applicant: Nitin Kumar ,  Chi-I Lang ,  Tony Chiang ,  Zhi-wen Sun ,  Jinhong Tong

Inventor： Nitin Kumar ,  Chi-I Lang ,  Tony Chiang ,  Zhi-wen Sun ,  Jinhong Tong

IPC: H01L21/00

CPC classification number: H01L45/145 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1633

Abstract: Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.

Abstract translation: 提供电阻式开关存储器元件，其可以包含由无电金属形成的化学金属电极和金属氧化物。 电阻式开关存储器元件可以表现出双稳态，并且可以用于高密度多层存储器集成电路中。 诸如镍基材料的无电导电材料可以选择性地沉积在硅晶片或其它合适的衬底上的导体上。 无电导电材料可以被氧化以形成用于电阻式开关存储元件的金属氧化物。 可以沉积多层导电材料，每层具有不同的氧化速率。 可以利用导电层的差异氧化速率来确保在制造期间形成所需厚度的金属氧化物层。

公开(公告)号：US20110151105A1

公开(公告)日：2011-06-23

申请号：US12970638

申请日：2010-12-16

Applicant: Nikhil D. Kalyankar ,  Nitin Kumar ,  Zhi-Wen Sun ,  Kenneth A. Williams

Inventor： Nikhil D. Kalyankar ,  Nitin Kumar ,  Zhi-Wen Sun ,  Kenneth A. Williams

IPC: C23C16/52 ,  B05C11/00

CPC classification number: C23C18/1254 ,  B01J19/0046 ,  B01J2219/0036 ,  B01J2219/00443 ,  B01J2219/00691 ,  B01J2219/00702 ,  B01J2219/00756 ,  C40B30/00 ,  C40B60/12 ,  Y10T428/2991

Abstract: Embodiments of the current invention describe a high performance combinatorial method and apparatus for the combinatorial development of coatings by a dip-coating process. The dip-coating process may be used for multiple applications, including forming coatings from varied sol-gel formulations, coating substrates uniformly with particles to combinatorially test particle removal formulations, and the dipping of substrates into texturing formulations to combinatorially develop the texturing formulations.

Abstract translation: 本发明的实施例描述了通过浸涂工艺组合开发涂层的高性能组合方法和装置。 浸涂方法可用于多种应用，包括由不同溶胶 - 凝胶制剂形成涂层，用颗粒均匀地涂覆底物以组合测试颗粒去除配方，以及将基材浸渍到变形配方中以组合开发变形配方。

公开(公告)号：US07949723B2

公开(公告)日：2011-05-24

申请号：US10438109

申请日：2003-05-14

Applicant: Bahman Barazesh ,  Kannan Rajamani ,  Steven C. Szep ,  Nitin Kumar Varma ,  Tomasz Janusz Wolak

Inventor： Bahman Barazesh ,  Kannan Rajamani ,  Steven C. Szep ,  Nitin Kumar Varma ,  Tomasz Janusz Wolak

IPC: G06F15/16

CPC classification number: H04L67/34 ,  H04L69/329 ,  H04M1/24 ,  H04M1/2535

Abstract: A unique real time tuning (RTT) process is employed for obtaining the desired optimum device parameter adjustments. The RTT parameter adjustment process is utilized with IP phone or other device chipsets as desired. In one embodiment, RTT provides a graphical user interface to a digital signal processor (DSP), or the like, on the device chipset allowing for observation, evaluation and control of the device parameters in real time. The real time exchange of the device parameter information between the device and an external workstation, e.g., a personal computer or the like, is provided by a User Datagram Protocol (UDP) that runs on a controller on the device, e.g., an ARM processor or the like. In this example, the unique combination of the RTT, UDP and DSP cooperate advantageously to implement, in accordance with the principles of the invention, the desired observability, and control to designers to tune the device, e.g., IP Phone, in real time to specified hardware, plastics, audio requirements required by existing standards or the like.

Abstract translation: 采用独特的实时调谐（RTT）过程来获得所需的最佳设备参数调整。 RTT参数调整过程根据需要与IP电话或其他设备芯片组一起使用。 在一个实施例中，RTT向设备芯片组上的数字信号处理器（DSP）等提供图形用户界面，允许实时观察，评估和控制设备参数。 在设备和外部工作站（例如个人计算机等）之间的设备参数信息的实时交换由在设备上的控制器上运行的用户数据报协议（UDP）提供，例如ARM处理器 或类似物。 在该示例中，RTT，UDP和DSP的独特组合有利地协调，以根据本发明的原理实现期望的可观察性，并且控制设计人员实时调谐设备，例如IP电话， 指定的硬件，塑料，现有标准要求的音频要求等。

公开(公告)号：US20100301759A1

公开(公告)日：2010-12-02

申请号：US12474141

申请日：2009-05-28

Applicant: Shashank Bakre ,  Nitin Kumar

Inventor： Shashank Bakre ,  Nitin Kumar

IPC: H05B39/04

CPC classification number: H05B41/295 ,  H05B41/2828 ,  H05B41/2855 ,  H05B41/2985 ,  Y02B20/186

Abstract: A restart circuit for causing an electronic ballast to perform a restart in response to reconnecting any lamp of a multiple lamp configuration of the electronic ballast to the electronic ballast is disclosed. The electronic ballast includes a filament health check circuit for providing a first current through a monitored filament of the lamps to a controller of the ballast. The controller restarts the electronic ballast when a determined ratio of the first current to a reference current indicates that the monitored filament has been disconnected or broken (i.e., the first current substantially decreases) and is subsequently replaced or reconnected to the ballast (i.e., the first current returns to a predetermined level). The ballast further comprises a dv/dt circuit for reducing the first current for a transient time period in response to reconnecting a filament other than the monitored filament to the ballast, causing the controller to restart the ballast.

Abstract translation: 公开了一种用于使电子镇流器响应于将电子镇流器的多灯配置的任何灯重新连接到电子镇流器而进行重启的重启电路。 电子镇流器包括灯丝健康检查电路，用于通过所监视的灯的灯丝将第一电流提供到镇流器的控制器。 当第一电流与参考电流的确定比率指示所监测的灯丝已经断开或断开（即，第一电流基本上减小）并且随后被替换或重新连接到镇流器时，控制器重新启动电子镇流器（即， 第一电流返回到预定水平）。 镇流器还包括dv / dt电路，用于响应于除了被监测的灯丝之外的灯丝重新连接到镇流器而使第一电流减小一个瞬时时间段，导致控制器重新启动镇流器。