Abstract:
Disclosed are a method of manufacturing zinc oxide nanorod arrays grown in a certain pattern in a predetermined region of a nitride semiconductor, and zinc oxide nanorod arrays manufactured by the same. The method includes: preparing a growth substrate having a first surface and a second surface; growing a nitride semiconductor layer on the first surface of the growth substrate; placing a support substrate on the nitride semiconductor layer; forming a mask pattern on the second surface of the growth substrate; and removing the growth substrate from the nitride semiconductor layer by providing a laser beam through the second surface of the growth substrate having the mask pattern.
Abstract:
Exemplary embodiments of the present invention relate to a photo detection device including a substrate, a first light absorption layer disposed on the substrate, a second light absorption layer disposed in a first region on the first light absorption layer, a third light absorption layer disposed in a second region on the second light absorption layer, and a first electrode layer disposed on each of the first, the second, and the third light absorption layers.
Abstract:
Embodiment of the invention provide a bidet that includes an inhalation unit and a exhaust unit comprises a sterilizing and deodorizing function. The bidet includes: an inhalation unit comprising a first sterilizing device, an exhaust unit hcomprising a second sterilizing device, and a manipulation unit controlling operation of the inhalation unit.
Abstract:
The multifunction LED lighting apparatus of the present invention includes a least one lighting LED, at least one ultraviolet (UV) LED, a substrate configured to have the at least one lighting LED and the at least one UV LED mounted thereon, and a cover disposed to face the substrate at a specific interval and configured to cover the lighting LED and the UV LED. The at least one lighting LED and the at least one UV LED are integrally mounted on the substrate and configured to form a single module of a thin sheet form, and the cover is installed to cover and support the single module placed on the inside wall of an application.
Abstract:
A glass sealant coating device for a light-emitting diode is disclosed. The sealant coating device comprises: a syringe comprising a sealant chamber and a sealant nozzle; a sealant pressing unit for providing a discharge pressure of a glass sealant through the sealant nozzle; and a sealant heating unit which is mounted around the syringe such that a discharge temperature of the glass sealant is maintained above a transition temperature and below a melting temperature. Accordingly, the light-emitting efficiency of a light-emitting diode is increased, the thermal stability of the light-emitting diode is increased, a nozzle clogging phenomenon or the air bubbles which may be generated during coating can be prevented, and the generated air bubbles can be easily removed, by using the properties of the glass sealant.
Abstract:
A method of fabricating a gallium nitride (GaN)-based semiconductor device. The method includes preparing a GaN substrate having lower and upper surfaces; growing GaN-based semiconductor layers on the upper surface of the GaN substrate to form a semiconductor stack; forming a support substrate on the semiconductor stack; and separating the GaN substrate from the semiconductor stack. The separating of the GaN substrate includes irradiating a laser from the lower surface of the GaN substrate. The laser is transmitted through the lower surface of the GaN substrate and forms a laser absorption region inside a structure consisting of the GaN substrate and the semiconductor stack.
Abstract:
A light emitting device for a display including a first LED sub-unit, a second LED sub-unit disposed on the first LED sub-unit, a third LED sub-unit disposed on the second LED sub-unit, electrode pads disposed under the first LED sub-unit, each of the electrode pads being electrically connected to at least one of the first, second, and third LED sub-units, and lead electrodes electrically connected to the electrode pads and extending outwardly from the first LED sub-unit.
Abstract:
A solution for illuminating plants is provided. An illustrative system can include: a set of visible light sources configured to emit visible radiation directed at the plant; a set of ultraviolet radiation sources configured to emit ultraviolet radiation directed at the plant; and a set of sensors, wherein at least one sensor is configured to detect a fluorescence emitted from the plant due to the ultraviolet radiation and a fluorescence emitted from the plant due to the visible radiation.
Abstract:
A high-efficiency light-emitting device of the present invention comprises: a nitride-based semiconductor laminate layer comprising a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer; a substrate comprising a first electrode and a second electrode each connected to the first conductive-type semiconductor layer and the second conductive-type semiconductor layer, a first pad electrode and a second pad electrode each connected with the first electrode and the second electrode, and a first connection pad and a second connection pad each connected with the first pad electrode and the second pad electrode; and a solder positioned between the pad electrodes and the connection pads, wherein the pad electrodes are disposed so as to face the connection pads, at least one among the first pad electrode and the first connection pad facing each other, or at least one among the second pad electrode and the second connection pad facing each other comprises at least one groove part formed on the surface thereof that is facing the other, and at least one part of the solder may be disposed in the groove part.
Abstract:
A light emitting diode chip includes: a first conductive type semiconductor layer disposed on a substrate; a mesa disposed on the first conductive type semiconductor layer and including an active layer and a second conductive type semiconductor layer; an insulation layer covering the first conductive type semiconductor layer and the mesa, the insulation layer including at least one first opening exposing the first conductive type semiconductor layer and a second opening disposed on the mesa; a first pad electrode disposed on the insulation layer and electrically connected to the first conductive type semiconductor layer through the first opening; and a second pad electrode disposed on the insulation layer and electrically connected to the second conductive type semiconductor layer through the second opening. The first opening of the insulation layer includes a first region covered by the first pad electrode and a second region exposed outside the first pad electrode.