Abstract:
PROBLEM TO BE SOLVED: To provide a technology for removing heat efficiently from a type of an integrated circuit that has an exposed portion of the integrated circuit die. SOLUTION: The invention comprises a lid that is capable of being placed in contact with and attached to the integrated circuit that has the exposed surface of the integrated circuit die. The lid has portions that form a cavity between a surface of the lid and the exposed surface of the integrated circuit die when the lid is placed in contact with the integrated circuit. The lid also has portions that form a first fluid conduit for transporting a fluid into the cavity and a second fluid conduit for transporting the fluid out of the cavity. Heat from the integrated circuit die is absorbed by the fluid by direct convection and removed from the integrated circuit when the fluid is removed from the cavity. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a technique of performing the debug and software development of a dual mode smart card. SOLUTION: An integrated circuit and method used together with a smart card is operable in both ISO mode based on International Standardization Organization 7816 (ISO 7816) protocol and non-ISO mode based on non-ISO protocol. A dual mode integrated circuit includes a microprocessor and a switching block. The circuit includes an ISO port operable for making communication in the ISO mode when an external interface is connected to the switching block and the ISO mode is detected, and a non-ISO port operable to make communication in the non-ISO mode when the non-ISO mode is detected. The ISO port is form-specified to enable the debug and/or software development via a serial interface in the non-ISO mode. The non-ISO port is form-specified to enable the debug and/or software development via the non-ISO port in the ISO mode. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide systems and methods for enhanced DFH (dynamic frequency hopping) among a plurality of WRAN (wireless regional area network) cells. SOLUTION: A dynamic frequency hopping community (DFH community) is formed from a plurality of wireless regional area network (WRAN) cells, wherein each of the plurality of WRAN cells within the DFH community is a one-hop neighbor of the leader cell. The leader cell sets and distributes a hopping pattern for use among the WRAN cells, on the basis of, in part, the number of usable channels and whether a WRAN cell is shared by two groups in the DFH Community. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a method and system for fast implementation of subpixel interpolation. SOLUTION: A subpixel interpolator includes an input memory capable of storing video information formed from full pixels. The subpixel interpolator also includes at least one interpolation unit capable of performing subpixel interpolation to generate half-pixels and quarter-pixels in parallel. Multiple half-pixels and multiple quarter-pixels are generated concurrently during the subpixel interpolation. In addition, the subpixel interpolator includes an output memory capable of storing at least some of the full pixels, half-pixels, and quarter-pixels. In some embodiments, at least one interpolation unit includes a horizontal half-pixel interpolation unit, two vertical half-pixel interpolation units, and a quarter-pixel interpolation unit, all of which may operate in parallel. In particular embodiments, the interpolation units are formed from adders and shifters and do not include any multipliers. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a magnetic random access memory element which can store multi-bits. SOLUTION: The magnetic random access memory element is made from a first magnetic tunnel junction and a second magnetic tunnel junction. These magnetic tunnel junctions are connected to each other in a series resistive circuit. The connected first and second magnetic tunnel junctions are connected to a bit line through an access transistor. A write bit line and a write data line are associated with each of the first and second magnetic tunnel junctions. By application of appropriate currents to these lines , the magnetic vector orientation with each of the first and second magnetic tunnel junctions can be controlled so as to store within the element in any one of at least three logic states. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide an advanced IP address lookup technology. SOLUTION: Internet Protocol address prefixes are hashed into hash tables allocated memory blocks on demand after collisions occur for both a first hash and a single rehash. The number of memory blocks allocated to each hash table is limited, with additional prefixes, handled by an overflow content addressable memory. Each hash table contains only prefixes of a particular length, different hash tables contain prefixes of different lengths. Only subset of possible prefix lengths are accommodated by the hash tables, a remainder of prefixes is handled by the content addressable memory or a similar alternate address lookup facility. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide technique for performing error correction and error detection on a wide data word in a memory system and other systems including a memory. SOLUTION: A parity generation circuit includes a plurality of bit generation circuits. Each of the bit generation circuits operates to receive each data bit and each hard latch signal, and generate a parity signal indicating the parity of the corresponding data bit when the hard latch signal is inactive. Each of the bit generation circuits drives the parity signal to a setting value when the hard latch signal is active. An output circuit is coupled with a bit generation circuit to receive the parity signal, and operates to generate an output parity signal in response to the parity signal from the bit generation circuit. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide an integrated and released beam layer structure manufactured in a trench and its manufacturing method. SOLUTION: The beam layer structure has a semiconductor substrate 20, the trench 18, a first electrical conducting layer 24, and the beam 28. The trench is extended inside the semiconductor substrate and has a wall. The first electrical conducting layer is positioned on the wall of the trench in the selected position. The beam is positioned on the trench, and the first part of it is connected to the semiconductor substrate, and a second part of it is movable. The second part of the beam is separated from the wall of the trench by the selected distance. Therefore, the second part of the beam is freely movable inside the plane vertical or parallel to the surface of the substrate, and can be deflected, that is, deformed relative to the trench so as to electrically contact in response to a predetermined acceleration force applied to the beam structure or the change of a predetermined temperature. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide an improved semiconductor memory device in which comparatively high-speed phase change material is used. SOLUTION: The device is a circuit and a method for the memory device for a phase change memory, and the like. A memory 1 having a plurality of columns of a memory cells 2 is especially provided, and each column of the memory cells is connected to a bit line 4 or a data line. Each of the memory cells includes a programmable resistance element connected in series to a selection transistor. Each of the bit lines is connected to a separate reference cell and a separate transistor. The transistor is connected between the corresponding bit line and reference voltage such as grounding, and the like. During the period of the memory read operation, the transistor, the reference cell and the addressed memory cell form a differential amplifier circuit. Output from the differential amplifier circuit is connected to a data output terminal for the phase change memory. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a technique to determine the direction of rotation of a sensorless motor operating in the state of freewheel, by comparing signals induced in a motor winding. SOLUTION: A device and method for determining the freewheel rotation of an electric motor is provided comprises a step to measure first and second signals from first and second windings of an unenergized motor, respectively, and a step to determine whether or not an energized motor is rotating from the first and second signals. The method can also determine the direction of rotation from the first and second signals when the unenergized motor is rotating. Further the method can measure a third signal from a third winding of the unenergized motor, and when determining whether or not the motor is rotating the method can determine that the motor is not rotating if the first, second and third signals are equal. Each of the first and second signals can have a back-voltage. COPYRIGHT: (C)2005,JPO&NCIPI