Abstract:
A system and method for enabling rapid partial configuration of reconfigurable devices, wherein configuration definition means define partial configuration requirements, and contain at least a starting address of configuration data for the partial reconfiguration, data size specifying the number of contiguous locations to be reconfigured, and desired configuration data corresponding to the contiguous locations. Configuration loading means provides for loading the configuration data into the reconfigurable device according to the partial configuration requirements.
Abstract:
A capacitor discharge ignition (CDI) system is capable of generating intense continuous electrical discharge at a spark gap for a desired duration and may include a second controllable power switching circuit with its input terminal connected to an output terminal of a high voltage DC source device. An output terminal of the second controllable power switching circuit is connected to an input terminal of a first power switching circuit. The second controllable power switching circuit may also have a control terminal connected to an output of a controller. The first controllable power switching circuit may be used for discharging a discharge capacitor, and the second controllable power switching circuit may cause charging of the discharge capacitor. As such, an ignition current through an ignition coil of the system is enabled for any desired number of cycles during both the charge and discharge cycles of the discharge capacitor.
Abstract:
A field programmable logic device includes at least two independently configurable embedded memory structures. The memory structures may differ in at least one parameter, such as memory size, available configuration depths, and available configuration widths. As such, a more efficient memory utilization is provided.
Abstract:
L'invention concerne un circuit de génération d'une tension de référence (V OUT ), comprenant une première source de courant (M4) en série avec un premier transistor bipolaire (Q8) ; une deuxième source de courant (M5) en série avec une première résistance (R8) ; une troisième source de courant (M6) en série avec un deuxième transistor bipolaire (Q9), la troisième source de courant étant en miroir de courant avec la première source de courant ; une deuxième résistance (R9) entre la base du deuxième transistor bipolaire (Q9) et le point de connexion entre la deuxième source de courant et la première résistance ; et une quatrième source de courant (M7) en série avec une troisième résistance (R10), le point de connexion entre la quatrième source de courant (M7) et la troisième résistance (R10) définissant une borne de tension de référence (V OUT ).
Abstract:
The present invention provides a flip flop circuit utilizing low power dissipation. The low power flip-flop circuit 300 includes a sensing circuit 304, a clock generating circuit 306, and an output sensing circuit. The flip flop is positive edge triggered and operates on an internally generated pseudo clock signal. The sensing circuit senses a change in an input signal and an output signal of the flip-flop output. The clock generating circuit generates a pseudo clock signal with a sharp rise and fall depending on an external clock signal. In very large scale integration (VLSI) applications the data activity is generally of the order of 2-10 % of clock activity, so, the switching current which flows between a power supply to a ground terminal, when the data is constant and clock is toggling leads to high power dissipation and electromagnetic emissions (which has now become a serious problem in VLSI digital designs).
Abstract:
The present invention provides a level shifter circuit capable of high frequency operations. The level shifter circuit utilizes a dynamic charge injection device, which diminishes a capacitive coupling effect between a gate and a drain of input NMOS devices, when the input signal switches from a high logic level to a low logic level. The dynamic charge injection device is incorporated at output nodes to provide initial thrust to the level shifter circuit, which triggers a positive regenerative feedback of cross-coupled pull up PMOS devices enabling a rapid transition and hence the high frequency operations.