公开(公告)号：KR1020080045038A

公开(公告)日：2008-05-22

申请号：KR1020060114168

申请日：2006-11-18

Applicant: 삼성전자주식회사

Inventor： 유정균 ,  이남영 ,  이순행

IPC: H01L21/66

Abstract: A method for normalizing an association between defect density and yield using a wafer particle inspection method is provided to facilitate detection of particles that are a main factor of yield by grouping residual particles and by calculating the frequency for normalization. A method for normalizing an association between defect density and yield using a wafer particle inspection method comprises the steps of: determining an inspection region on an upper surface of a wafer where a plurality of semiconductor chips are located(S200); detecting particles existing on upper surfaces of the semiconductor chips located within the determined inspection region and classifying the particles(S300,S310); grouping the classified particles and individually evaluating levels of each group(S500,S600).

Abstract translation: 提供了使用晶片颗粒检查方法对缺陷密度和产量之间的关联进行归一化的方法，以便于通过分组残留颗粒并通过计算标准化频率来检测作为产率的主要因素的颗粒。 使用晶片颗粒检查方法对缺陷密度和产量之间的关联进行归一化的方法包括以下步骤：确定在多个半导体芯片所在的晶片的上表面上的检查区域（S200）; 检测存在于确定的检查区域内的半导体芯片的上表面上的粒子，并分级粒子（S300，S310）。 对分类颗粒进行分组并分别评估每组的水平（S500，S600）。