Abstract:
PURPOSE: A method for manufacturing a graphene is provided to simplify processes and to prevent damage of the graphene. CONSTITUTION: A method for manufacturing a graphene comprises: a step of forming a graphite catalyst thin film(230) on a substrate(210); a step of performing thermal treatment of the graphite catalyst thin film to form a graphene layer on the upper and lower portions of the graphite catalyst thin film; and a step of forming a laminate structure comprising a first graphene layer(243), graphite catalyst thin film, and second graphene layer(245) on the substrate.
Abstract:
PURPOSE: A method for manufacturing graphine is provided to directly form the graphine on a substrate and to simplify process without graphine damage. CONSTITUTION: A method for manufacturing graphine comprises: a step of forming a carbon-dissolved metal thin film(230) on a substrate(210); and a step of performing thermal treatment of the metal thin film to form a laminate structure on the substrate.
Abstract:
PURPOSE: A method for preparing graphine is provided to simplify process without a process of moving the graphine to a substrate and to prevent damage of the graphine. CONSTITUTION: A method for preparing graphine comprises: a step of forming a laminate structure comprising a graphite catalyst thin film(240) amorphous carbon thin film(230) on a substrate(210); a step of performing thermal treatment of the first laminate structure to form a second laminate structure on the substrate; and a step of removing the graphite catalyst thin film and second graphine layer. The graphite catalyst is a metal substance in which carbon is dissolved.
Abstract:
PURPOSE: An apparatus for forming a pattern is provided to uniformize background intensity of electron beam and to prevent noise. CONSTITUTION: An apparatus(500) for forming a pattern comprises: a specimen support(510) having a crystalline specimen; an electron beam irradiation unit(520) for irradiating electron beam; an objective lens(530) for forming a grid image by transmitting beam and diffraction beam; a plate(541) having a plurality of first holes(542) for passing transmitting beam and diffraction beam; a deflector(540) having a plurality of electron beam control devices(545) for controlling process path of the transmitting beam and diffraction beam; an aperture(550) having a plurality of second holes(552) formed circular path of the transmitting beam and diffraction beam; and a substrate support(570) having the substrate in which electron resist is applied.
Abstract:
PURPOSE: A method for manufacturing a racetrack memory is provided to easily form a magnetic nano line by using a pattern forming device using a crystal structure of materials. CONSTITUTION: An object is a nano line pattern and is arranged on a chamber. An electron beam(500) is radiated to the object. A substrate(510) is exposed to the electron beam which passes through the object. An electron beam resister(530) exposed to the electron beam passing through the object is developed. The electron beam resister nano line pattern is formed. A magnetic nano line is formed by etching a magnetic material(520).
Abstract:
PURPOSE: An electron resist, a manufacturing method thereof are provided to simplify a manufacturing process by using an electron beam resist with conductivity and transparency. CONSTITUTION: An electron beam resist includes an HSQ(hydrogen silsesquioxane) and a carbon nanotube. An electron beam resist layer(720) is formed on the patterned target. An electron beam resist pattern(725) is formed on the electron beam resist layer. The target is patterned by using the electron beam resist pattern.