公开(公告)号：KR100445839B1

公开(公告)日：2004-08-25

申请号：KR1020010086641

申请日：2001-12-28

Applicant: 재단법인서울대학교산학협력재단

Inventor： 김재정 ,  서준모 ,  박한흠

IPC: H01L21/28

Abstract: PURPOSE: A method for forming a silver thin film as a semiconductor metal line is provided to be capable of improving the uniformity and the adhesive force of the silver thin film by processing a heat treatment after forming a metal seed layer using electroless plating process. CONSTITUTION: A semiconductor substrate(110) is prepared for processing the following processes. After cleaning the semiconductor substrate, the surface of the semiconductor substrate is activated. A metal seed layer(130) is formed on the resultant structure by using an electroless plating solution. A heat treatment is carried out at the resultant structure. A silver thin film(140) is formed on the metal seed layer by carrying out an electrolytic plating process using a silver electrolytic plating solution.

Abstract translation: 目的：提供一种用于形成作为半导体金属线的银薄膜的方法，以便能够通过使用化学镀工艺在形成金属种子层之后通过处理热处理来提高银薄膜的均匀性和粘合力。 构成：制备半导体衬底（110）用于处理以下工艺。 在清洁半导体衬底之后，激活半导体衬底的表面。 通过使用化学镀溶液在所得结构上形成金属种子层（130）。 在所得到的结构上进行热处理。 通过使用银电解电镀液进行电解电镀工艺，在金属种子层上形成银薄膜（140）。