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公开(公告)号：KR1020090102464A
公开(公告)日：2009-09-30
申请号：KR1020080027928
申请日：2008-03-26
Applicant: 재단법인서울대학교산학협력재단
IPC: C23C18/38
Abstract: PURPOSE: An electroless plating solution and a plating method using the same are provided to performing electrodeposition using a first and second plating solution on patterns having different sizes each other and fill without the amount of electroposition. CONSTITUTION: A method for plating with electroless plating solution comprises: a step (S110) of removing a natural oxidation film of a substrate by dipping a pattern substrate in hydrofluoric acid solution; a step (S130) of activating the surface of substrate with palladium catalyst; and a step (S140) of performing electrodeposition with electrodeposition solution.
Abstract translation: 目的：提供一种化学镀溶液和使用该方法的电镀方法，以使用第一和第二电镀溶液对具有不同尺寸的图案进行电沉积，并填充而不具有电穿孔量。 构成：使用无电镀液进行电镀的方法包括：通过将图案基板浸渍在氢氟酸溶液中来除去基板的天然氧化膜的工序（S110） 用钯催化剂活化底物表面的步骤（S130） 以及用电沉积溶液进行电沉积的步骤（S140）。
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公开(公告)号：KR100856543B1
公开(公告)日：2008-09-04
申请号：KR1020070052737
申请日：2007-05-30
Applicant: 재단법인서울대학교산학협력재단
IPC: H01L21/304
CPC classification number: H01L21/3212 , H01L21/76838 , H01L21/76841
Abstract: A method for forming an oxidation barrier or a diffusion barrier of a metal line of a semiconductor device is provided to enhance productivity and efficiency by performing only a continuously chemical mechanical polishing process without causing activation of a copper line using palladium. A surface of a copper layer for a semiconductor device is substituted with Ag by performing a chemical mechanical polishing process using a chemical mechanical polishing slurry includes an Ag-based compound. An oxidation barrier and a diffusion barrier are formed on a surface of the copper layer substituted with Ag by performing the chemical mechanical polishing process using the chemical mechanical polishing slurry including a reducing agent comprising a cobalt compound, a tungsten compound, and phosphorus.
Abstract translation: 提供一种用于形成半导体器件的金属线的氧化屏障或扩散阻挡层的方法，以通过仅进行连续化学机械抛光工艺而不引起使用钯的铜线的激活来提高生产率和效率。 通过使用包含Ag基化合物的化学机械抛光浆料进行化学机械抛光工艺，用Ag代替半导体器件用铜层的表面。 通过使用包含钴化合物，钨化合物和磷的还原剂的化学机械抛光浆料进行化学机械抛光工艺，在由Ag取代的铜层的表面上形成氧化屏障和扩散阻挡层。
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公开(公告)号：KR1020080026337A
公开(公告)日：2008-03-25
申请号：KR1020060091234
申请日：2006-09-20
Applicant: 재단법인서울대학교산학협력재단
CPC classification number: B01J19/0013 , B01F5/00 , B01J2219/00051 , B01J2219/00891 , B81B1/00
Abstract: A method for fabricating a micro-reactor is provided to prevent a catalyst from being coated on unnecessary regions in the micro-reactor fabricating process, simplify the cumbersome fabricating process, effectively form a catalyst layer only on inner walls of microchannels even after reactor bonding, and prevent cracking or exfoliation of the catalyst layer even after the reaction is proceeded. A method for fabricating a micro-reactor comprises: a first step of preparing a substrate having microchannels; a second step of flowing a catalyst coating solution into the microchannels of the substrate to fill the microchannels with the catalyst coating solution; and a third step of drying the substrateto form a catalyst layer on inner walls of the microchannels only by surface tension of a solvent contained in the catalyst coating solution. The first step includes the steps of: (a) forming microchannels on at least one of two substrates to be bonded; and (b) bonding the two substrates. The second step is conducted by flowing the catalyst coating solution into the microchannels by a syringe. The third step of drying the substrate includes the steps of: drying the substrate at room temperature; heat-treating the substrate dried at the room temperature at a temperature higher than the room temperature. The method further comprises the step of forming an oxide layer on the substrate prior to the second step to form easily the catalyst layer on the substrate.
Abstract translation: 提供了制造微反应器的方法，以防止在微反应器制造过程中催化剂被涂覆在不需要的区域上，简化繁琐的制造工艺，即使在反应器接合之后也仅在微通道的内壁上有效地形成催化剂层， 并且即使在反应进行之后也可以防止催化剂层的开裂或剥离。 微反应器的制造方法包括：制备具有微通道的基板的第一步骤; 使催化剂涂布溶液流入基板的微通道以用催化剂涂布溶液填充微通道的第二步骤; 以及仅通过催化剂涂布溶液中所含溶剂的表面张力使基材干燥以在微通道的内壁上形成催化剂层的第三步骤。 第一步包括以下步骤：（a）在要接合的两个基板中的至少一个上形成微通道; 和（b）粘合两个基底。 第二步是通过注射器将催化剂涂层溶液流入微通道进行。 干燥基材的第三步骤包括以下步骤：在室温下干燥基材; 对在高于室温的室温下室温干燥的基板进行热处理。 该方法还包括在第二步骤之前在衬底上形成氧化物层以在衬底上容易地形成催化剂层的步骤。
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公开(公告)号：KR100772320B1
公开(公告)日：2007-10-31
申请号：KR1020040106237
申请日：2004-12-15
Applicant: 주식회사 엘지화학 , 재단법인서울대학교산학협력재단
IPC: C25D3/46
Abstract: 본 발명은 은 박막 형성용 전기도금용액 및 그 용액을 이용한 은 박막 형성방법에 관한 것으로, 벤조트리아졸 유도체 및/또는 티오유레아 유도체를 첨가한 은 전기도금용액을 이용하여 은 박막을 형성하는 방법은 균열이나 틈과 같은 결함이 없는 균일한 은 박막을 형성하게 함으로써 고집적화 반도체 금속 배선 공정에 적합하게 활용할 수 있는 효과가 있다.
벤조트리아졸, 티오유레아, 은 박막, 전해도금, 첨가제-
公开(公告)号：KR100727213B1
公开(公告)日：2007-06-13
申请号：KR1020040106240
申请日：2004-12-15
Applicant: 주식회사 엘지화학 , 재단법인서울대학교산학협력재단
IPC: C25D3/38
Abstract: 본 발명은 반도체 구리배선을 위한 구리 전해도금 방법에 있어서, 폴리에틸렌글리콜(PEG), 염화나트륨(NaCl), N,N-디메틸 디티오카르바믹 산(3-설포프로필)에스테르(N,N-Dimethyl dithiocarbamic acid(3-sulfopropyl)ester)(DPS), 황산구리, 및 황산으로 이루어지는 구리 전해도금 용액을 사용하고, 여러 단계의 도금을 실시하여 초등각 전착(superconformal deposition)을 시킬 수 있는 구리 전해도금 방법에 관한 것이며, 반도체 배선에 결함이 없는 구리막을 제조할 수 있는 효과가 있다.
구리 전해도금, 반도체 배선, DPS, 구리 전착, 초등각 전착-
Patent Agency Ranking
公开(公告)号：KR100696622B1
公开(公告)日：2007-03-19
申请号：KR1020050098689
申请日：2005-10-19
Applicant: 삼성에스디아이 주식회사 , 재단법인서울대학교산학협력재단
CPC classification number: B01J37/0215 , B01J19/0093 , B01J23/80 , B01J2219/00783 , B01J2219/00822 , B01J2219/00828 , B01J2219/00831 , B01J2219/00833 , B01J2219/00835 , B01J2219/00837 , B01J2219/0086 , C01B3/38 , C01B2203/0233 , C01B2203/0244 , C01B2203/066 , C01B2203/1047 , C01B2203/1058 , C01B2203/1064 , C01B2203/107 , C01B2203/1076 , C01B2203/1082 , H01M8/0631 , Y02P20/52
Abstract: A micro reforming reactor for a fuel cell and a method for preparing the same are provided to form a micro tunnel by direct and close contact between a substrate formed with a micro channel and another substrate and form a catalyst layer on an inner wall of the micro tunnel selectively, thereby simplifying the preparing of the micro reforming reactor. A micro reforming reactor for a fuel cell includes a first substrate formed with a micro channel of which a width is 1000mum or less, a second substrate directly and closely contacting the first substrate at the surface formed with the micro channel, a catalyst layer alternatively formed on an inner wall of the micro tunnel, and an adhesive layer formed between the catalyst layer and the inner wall of the micro tunnel.
Abstract translation: 提供一种用于燃料电池的微型重整反应器及其制备方法，以通过在形成有微通道的基板与另一基板之间直接和紧密接触形成微通道，并在微型内表面上形成催化剂层 选择性地隧道，从而简化了微型重整反应器的制备。 一种用于燃料电池的微型重整反应器包括形成有宽度为1000μm或更小的微通道的第一衬底，在形成有微通道的表面处直接且紧密接触第一衬底的第二衬底，交替形成的催化剂层 在微通道的内壁上，以及形成在催化剂层和微通道的内壁之间的粘合剂层。
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公开(公告)号：KR1020060033456A
公开(公告)日：2006-04-19
申请号：KR1020040082581
申请日：2004-10-15
Applicant: 삼성에스디아이 주식회사 , 재단법인서울대학교산학협력재단
IPC: H01L21/20
CPC classification number: H01L23/4827 , H01L2224/04026 , H01L2924/1461 , H01L2924/00
Abstract: 본 발명은 접착력이 우수한 다층 박막 및 이의 제조방법에 관한 것으로, 더욱 상세하게는 기판 상에 형성된 질화탄탈륨막과, 상기 질화탄탈륨막 상에 형성된 탄탈륨막과, 상기 탄탈륨막 상에 형성된 금 박막을 포함하는 다층 박막에 관한 것이다. 또한, 본 발명은 질화탄탈륨막이 형성된 기판 상에 탄탈륨을 소정 두께로 증착시킨 다음, 금 박막을 증착시켜 250 내지 800 ℃에서 열처리하여 제조되는 다층 박막의 제조방법에 관한 것이다.
상기 질화탄탈륨막 및 금 박막 사이에 탄탈륨막을 형성하여 상기 층간 사이의 접착력을 효과적으로 증가시켜 반도체 소자, MEMS 및 연료전지 분야에 바람직하게 적용할 수 있다.
금, 질화탄탈륨, 탄탈륨, 열처리, 접착, 반도체 소자, MEMS, 연료전지Abstract translation: 本发明包括的是，更具体地，氮化钽膜和形成在所述钽薄膜金薄膜，对形成在基板上的氮化钽膜，根据制造多层薄膜的方法和它的优良的粘合形成的钽薄膜 分层薄膜。 本发明还涉及一种制造多层薄膜，该薄膜是通过在250〜800℃热处理制得的方法沉积，然后具有沉积至厚度钽形成的衬底上的期望的氮化钽膜的金薄膜。
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公开(公告)号：KR1020040080464A
公开(公告)日：2004-09-20
申请号：KR1020030015226
申请日：2003-03-11
Applicant: 주식회사 엘지화학 , 재단법인서울대학교산학협력재단
IPC: C23C18/42
CPC classification number: C23C18/1879 , C23C18/44
Abstract: PURPOSE: A surface activation method for silver electroless plating is provided to obtain a thin silver film used for wiring or seed layer for silver electroless plating by activating the surface of a plating object using gold (Au) as a catalyst, thereby preventing agglomeration of silver to be deposited on the surface of the plating object. CONSTITUTION: In a method for activating the surface of a plating object using a catalyst before performing silver (Ag) electroless plating, the surface activation method for silver electroless plating is characterized in that gold (Au) is used as the catalyst, wherein the surface of the plating object is reacted with a gold activation solution comprising 0.01 to 0.5 g/L of gold chloride and 0.1 to 10 ml/L of hydrofluoric acid in order to use gold as the catalyst.
Abstract translation: 目的：提供一种银化学镀的表面活化方法，以金（Au）作为催化剂使电镀物体的表面活化，从而防止银的聚集，从而获得用于银化学镀的布线或种子层的薄银膜 沉积在电镀物体的表面上。 构成：在进行银（Ag）无电解电镀之前，使用催化剂活化镀覆物的表面的方法中，银化学镀的表面活化法的特征在于，使用金（Au）作为催化剂，其中表面 的镀液与含有0.01〜0.5g / L氯化金和0.1〜10ml / L氢氟酸的金活化溶液反应，以使用金作为催化剂。
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公开(公告)号：KR1020040080463A
公开(公告)日：2004-09-20
申请号：KR1020030015225
申请日：2003-03-11
Applicant: 주식회사 엘지화학 , 재단법인서울대학교산학협력재단
IPC: H01L21/288
Abstract: PURPOSE: A method for forming a metallic thin film on a high resistivity substrate using an electroplating method is provided to form easily a metallic thin film on the high resistivity substrate by using a surface activation method. CONSTITUTION: A preprocessing procedure is performed. The preprocessing procedure includes an etching process for removing oxides from a high resistivity substrate by using an etching solution and a surface activation process for activating a surface of the high resistivity substrate by using a metal activation solution. A metallic thin film is formed on an upper surface of the surface-activated substrate by using an electroplating solution. The etching solution is formed with HF solution.
Abstract translation: 目的：提供一种使用电镀方法在高电阻率基板上形成金属薄膜的方法，通过使用表面活化方法容易地在高电阻率基板上形成金属薄膜。 构成：执行预处理程序。 预处理方法包括通过使用蚀刻溶液从高电阻率基板去除氧化物的蚀刻工艺和通过使用金属活化溶液来激活高电阻率基板的表面的表面活化方法。 通过使用电镀液在表面活化基板的上表面上形成金属薄膜。 蚀刻溶液由HF溶液形成。
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公开(公告)号：KR1020030059743A
公开(公告)日：2003-07-10
申请号：KR1020020000491
申请日：2002-01-04
Applicant: 재단법인서울대학교산학협력재단
IPC: H01L21/288
Abstract: PURPOSE: A method for processing the surface of a substrate is provided to be capable of activating the surface of the substrate, reducing surface resistance, and improving the uniformity of an electroless plating layer. CONSTITUTION: A semiconductor substrate is prepared. A native oxide layer formed on the surface of the semiconductor substrate, is etched and cleaned. The surface of the semiconductor substrate is activated by immersing the cleaned semiconductor substrate into an activating solution. At this time, the activating solution is made of a catalyst for oxidizing a reducing agent, an activating agent for activating the surface of the semiconductor substrate, and a complexing agent for forming metal ion and ligand of the catalyst. Preferably, the metal ion of the catalyst is made of palladium, silver, gold, copper, or platinum.
Abstract translation: 目的：提供一种处理基板表面的方法，以能够激活基板的表面，降低表面电阻，并提高化学镀层的均匀性。 构成：制备半导体衬底。 形成在半导体衬底的表面上的自然氧化物层被蚀刻和清洁。 半导体衬底的表面通过将清洁的半导体衬底浸入激活溶液而被激活。 此时，活化溶液由用于氧化还原剂的催化剂，用于活化半导体衬底的表面的活化剂和用于形成催化剂的金属离子和配体的络合剂制成。 优选地，催化剂的金属离子由钯，银，金，铜或铂制成。
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