公开(公告)号：KR1020100038714A

公开(公告)日：2010-04-15

申请号：KR1020080097786

申请日：2008-10-06

Applicant: 삼성전자주식회사 ,  성균관대학교산학협력단

Inventor： 안승언 ,  권기원 ,  박재철 ,  박영수 ,  이명재

IPC: G11C16/34 ,  G11C16/08 ,  G11C16/10

CPC classification number: G11C8/06 ,  G06F12/0238 ,  G06F2212/7201 ,  G11C13/0069

Abstract: PURPOSE: An operation method of a nonvolatile memory is provided to improve the reliability of a nonvolatile memory status by transiting the state of a nonvolatile memory to only one side direction. CONSTITUTION: The first logical address and the first physical address are written in the specific row of a look-up table(LUT). First data is programmed in data storage area which the first physical address points the first logical address(LA) is mapped. A first logical address and a second physical address(PA) are written in the other row of the look-up table. Second data is programmed in data storage area which the second physical address points.

Abstract translation: 目的：提供一种非易失性存储器的操作方法，以通过将非易失性存储器的状态转换为仅一个侧面方向来提高非易失性存储器状态的可靠性。 构成：第一个逻辑地址和第一个物理地址被写入查找表（LUT）的特定行。 第一数据被编程在数据存储区域中，第一物理地址指向第一逻辑地址（LA）被映射。 第一逻辑地址和第二物理地址（PA）被写入查找表的另一行。 第二数据被编程在第二物理地址指向的数据存储区中。

公开(公告)号：KR1020090119666A

公开(公告)日：2009-11-19

申请号：KR1020080096027

申请日：2008-09-30

Applicant: 삼성전자주식회사 ,  성균관대학교산학협력단

Inventor： 박재철 ,  권기원

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/1251 ,  H01L29/66969 ,  H01L29/78621 ,  H01L29/78648 ,  H01L29/78696

Abstract: PURPOSE: A semiconductor device and a method of manufacturing the same are provided to make manufacturing costs simple and reduce manufacturing costs by forming a source area and a drain area in plasma process. CONSTITUTION: In a semiconductor device and a method of manufacturing the same, a semiconductor device including a thin film transistor is composed of a first oxide semiconductor layer and a first lamination structure. The first oxide semiconductor layer is formed on the substrate(SUB1). The first oxide semiconductor layer has the first source areas between the first channel area and the first drain area. The first lamination structures include a first channel region where a first gate isolation layers and a first gate electrode which are sequentially laminated.

Abstract translation: 目的：提供半导体器件及其制造方法，通过在等离子体工艺中形成源极区域和漏极区域，使制造成本简单并降低制造成本。 构成：在半导体器件及其制造方法中，包括薄膜晶体管的半导体器件由第一氧化物半导体层和第一层叠结构构成。 第一氧化物半导体层形成在基板（SUB1）上。 第一氧化物半导体层具有在第一沟道区和第一漏区之间的第一源区。 第一层叠结构包括第一沟道区，其中第一栅极隔离层和第一栅极电极依次层叠。