公开(公告)号：JPH04137343A

公开(公告)日：1992-05-12

申请号：JP25505490

申请日：1990-09-27

Applicant: AGENCY IND SCIENCE TECHN ,  FUTABA DENSHI KOGYO KK

Inventor： ITO JUNJI ,  KANAMARU MASATAKE ,  ITO SHIGEO ,  WATANABE TERUO ,  NAKADA HISASHI ,  NISHIMURA NORIO

IPC: H01J3/02 ,  H01J31/12

Abstract: PURPOSE:To obtain a picture display device which can be driven by a low voltage and can provide high display density by forming an emitter inside the recessed portion of a substrate and adjusting a period of time for forming an emitter film. CONSTITUTION:When a positive voltage is applied to a gate 5, electrons are emitted from an emitter 6 enclosed with the gate 5. If a positive voltage is timely applied to an anode 9 disposed on a second substrate 3 opposite to the emitter 6, the electrons are driven to make impact on the anode 9. Thereby, a phosphor 10 is excited to emit light, so that the desired picture display is performed. A space between the emitter 6 and the gate 5 on a first substrate 2 is determined in accordance with the thickness of the emitter 6 but the thickness of the emitter 6 formed inside the recessed portion can be controlled in accordance with a forming period of time for a metallic film and the like for constituting the emitter 6, and it is made possible to set up the space between both electrodes 5, 6 with high accuracy and in minute size. Accordingly, a low driving voltage is allowable, so that enhanced density of electron emitting portion may be attempted.

公开(公告)号：JPH0334413A

公开(公告)日：1991-02-14

申请号：JP16853689

申请日：1989-06-30

Applicant: AGENCY IND SCIENCE TECHN ,  SHINETSU CHEMICAL CO

Inventor： ITO JUNJI ,  KUBOTA YOSHIHIRO ,  OKAZAKI SATOSHI

IPC: G03F1/22 ,  G03F1/60 ,  H01L21/027

Abstract: PURPOSE:To improve SOR irradiation resistance and improve visible light transmittance by constituting a mask of a mask pattern part composed of narrow band gap material and an alignment mark part composed of wide band gap material. CONSTITUTION:By masking an Si substrate 1 with masking material 2, a narrow band gap material film 3 is formed, and the mask 2 is eliminated. By masking a narrow band gap mask 3 with masking material 4, a wide band gap material film 5 is formed, and the mask 4 is eliminated. An absorption material pattern 7 is formed on the narrow band gap film 3. An alignment mark 8 is formed on the wide band gap material film 5. By masking the Si substrate 1 with back-etching mask material, back-etching is performed. Thereby an X-ray lithography mask which endures high energy X-ray irradiation and has visible light transmittance necessary for alignment can be obtained.

公开(公告)号：JPH0252416A

公开(公告)日：1990-02-22

申请号：JP20262988

申请日：1988-08-16

Applicant: AGENCY IND SCIENCE TECHN ,  SOLEX KK

Inventor： ATODA NOBUFUMI ,  ITO JUNJI ,  HASEGAWA SHINYA

IPC: G03F1/22 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To reduce an influence by diffraction as far as possible and to accurately transcribe a pattern of submicron order by a method wherein, out of sections in a width direction of an X-ray absorber, a thickness in the central part is made thick and a thickness is made thin in its peripheral parts with reference to the central part. CONSTITUTION:A shape of side faces of X-ray absorbers 2 formed on an X-ray transmitting support film 1 is shaped; a total sum l1, l2,...lx of distances in a transmitting part in a straight-advance direction of parallel X-rays transmitted straight in the X-ray absorbers 2 is reduced gradually from the central part in a pattern width direction toward its peripheral parts; a change in a phase of the transmitted X-rays is reduced gradually from the central part in the pattern width direction toward its peripheral parts. That is to say, the X-rays are absorbed nearly around the central part of the X-ray absorbers 2. A change in a phase of secondary waves which have transmitted straight the absorbers 2 is large in the central part and is reduced gradually toward its peripheral parts. As a result of an influence by diffraction, amplitudes of the secondary waves are weakened mutually at a point A; an intensity of the X-ray there is weakened.

公开(公告)号：JPS6431007A

公开(公告)日：1989-02-01

申请号：JP18709387

申请日：1987-07-27

Applicant: AGENCY IND SCIENCE TECHN

Inventor： KANAYAMA TOSHIHIKO ,  ITO JUNJI

IPC: G01B11/26 ,  G01C1/00

Abstract: PURPOSE:To enable the highly precise measurement of an incident angle of beam on a substance, by a method wherein a diffraction grating is provided on the substance, one of diffracted beams of an incident beam caused by the diffraction grating is reflected, the reflected beam and at least one diffracted beam are made to interface with each other, and the beam intensity of a composite beam thus formed is measured. CONSTITUTION:A reflected beam R is obtained by making a diffracted beam D2 reflected by a reflector 2, and it is made to advance in the same direction with that of another diffracted beam D1 so that the beams D1 and R are made to interfere with each other. The phase of the beam R is delayed by the length of its optical path because of its going through the reflector 2, and a phase delay DELTApsi thereof is determined by a distance to the reflector 2 and a diffraction angle theta. The angle thetais varied in accordance with variation in an incident angle psi, and the incident angle psican be measured by a method wherein the beams R and D1 are made to interfere with each other and the phase delay DELTApsi is introduced into a detector 3 and measured from the variation in the intensity of a composite beam U of said lights. Accordingly, since the diffracted beam is used, the incident angle can be measured with high precision without affecting virtually a beam transmitted directly through a substance 1 and a beam reflected directly on the substance 1.

公开(公告)号：JPS62172203A

公开(公告)日：1987-07-29

申请号：JP1536886

申请日：1986-01-27

Applicant: AGENCY IND SCIENCE TECHN

Inventor： KANAYAMA TOSHIHIKO ,  ITO JUNJI

IPC: G01B11/00 ,  G01D5/38 ,  G03F9/00

Abstract: PURPOSE:To make it possible to measure the relative displacement of a plurality of objects with high accuracy, by providing a diffraction lattice on one object and measuring the phase of the diffracted wave obtained by diffracting a wave motion with the diffraction lattice. CONSTITUTION:Diffraction lattices G1, G1' each having the same cycle as a diffraction lattice G2 are arranged on object 1 at positions irradiated with a diffracted wave generated by diffraction lattice G2. The phase difference phi between the wave D diffracted by the diffraction lattice G2 and further diffracted by the diffraction lattice G1 to advance in the direction opposite to a direction I and the wave D' successively diffracted by the diffraction lattices G2, G1' is measured by detectors 4, 5. The phase difference phi is not dependent on the distance S between matters 1, 2 at all and proportional to the relative displacement (x) between the matters 1, 2 in the direction (x- direction) parallel to the surfaces of the diffraction lattices G1, G1', G2 and crossing the directions of the diffraction lattices at a right angle and phi=4pi.nmu/d(radian) is defined. This is an extremely simple result as compared with a case where the intensity of the wave D or D' is dependent on S or (x). Therefore, by measuring the phase difference phi, (x) can be measured regardless of S and the value of proportion coefficient S/d can be easily measured with high accuracy.