公开(公告)号：US11501965B2

公开(公告)日：2022-11-15

申请号：US15971601

申请日：2018-05-04

Applicant: ASM IP Holding B.V.

Inventor： Lingyun Jia ,  Viljami J. Pore ,  Marko Tuominen ,  Sun Ja Kim ,  Oreste Madia ,  Eva Tois ,  Suvi Haukka ,  Toshiya Suzuki

IPC: H01L21/02 ,  H01L21/32 ,  H01L21/311 ,  H01L21/321

Abstract: Methods for depositing oxide thin films, such as metal oxide, metal silicates, silicon oxycarbide (SiOC) and silicon oxycarbonitride (SiOCN) thin films, on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a first reactant that comprises oxygen and a component of the oxide, and a second reactant comprising reactive species that does not include oxygen species. In some embodiments the plasma power used to generate the reactive species can be selected from a range to achieve a desired step coverage or wet etch rate ratio (WERR) for films deposited on three dimensional features. In some embodiments oxide thin films are selectively deposited on a first surface of a substrate relative to a second surface, such as on a dielectric surface relative to a metal or metallic surface.

公开(公告)号：US11387107B2

公开(公告)日：2022-07-12

申请号：US17078743

申请日：2020-10-23

Applicant: ASM IP HOLDING B.V.

Inventor： Eva E. Tois ,  Hidemi Suemori ,  Viljami J. Pore ,  Suvi P. Haukka ,  Varun Sharma

IPC: H01L21/285 ,  H01L21/02 ,  H01L21/768 ,  H01L21/3065 ,  C23C16/04 ,  B05D1/00 ,  C23C16/455 ,  C23C16/56

Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity.

公开(公告)号：US11213853B2

公开(公告)日：2022-01-04

申请号：US16657307

申请日：2019-10-18

Applicant: ASM IP Holding B.V.

Inventor： Suvi P. Haukka ,  Raija H. Matero ,  Eva Tois ,  Antti Niskanen ,  Marko Tuominen ,  Hannu Huotari ,  Viljami J. Pore ,  Ivo Raaijmakers

IPC: C23C16/40 ,  B05D3/10 ,  C23C18/06 ,  C23C18/12 ,  C23C16/02 ,  C23C16/04 ,  C23C16/14 ,  C23C16/18 ,  C23C16/28

Abstract: Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.

公开(公告)号：US11195712B2

公开(公告)日：2021-12-07

申请号：US16742079

申请日：2020-01-14

Applicant: ASM IP Holding B.V.

Inventor： Viljami J. Pore ,  Seiji Okura ,  Hidemi Suemori

IPC: H01L21/02 ,  H01L21/311 ,  C23C16/30 ,  C23C16/455 ,  H01L21/28 ,  H01L21/033

Abstract: A process is provided for depositing a substantially amorphous titanium oxynitride thin film that can be used, for example, in integrated circuit fabrication, such as in forming spacers in a pitch multiplication process. The process comprises contacting the substrate with a titanium reactant and removing excess titanium reactant and reaction byproducts, if any. The substrate is then contacted with a second reactant which comprises reactive species generated by plasma, wherein one of the reactive species comprises nitrogen. The second reactant and reaction byproducts, if any, are removed. The contacting and removing steps are repeated until a titanium oxynitride thin film of desired thickness has been formed.

公开(公告)号：US11158500B2

公开(公告)日：2021-10-26

申请号：US16603555

申请日：2018-05-03

Applicant: ASM IP Holding B.V.

Inventor： Lingyun Jia ,  Viljami J. Pore ,  Marko Tuominen ,  Sun Ja Kim ,  Oreste Madia

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  H01L21/3065

Abstract: Methods for controlling the formation of oxygen containing thin films, such as silicon oxycarbide (SiOC) and silicon oxycarbonitride (SiOCN) thin films, on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor that comprises oxygen and a second reactant that does not include oxygen. In some embodiments the plasma power can be selected from a range to achieve a desired step coverage or wet etch rate ratio (WERR) for films deposited on three dimensional features.

公开(公告)号：US20210285097A1

公开(公告)日：2021-09-16

申请号：US17331971

申请日：2021-05-27

Applicant: ASM IP Holding B.V.

Inventor： Suvi P. Haukka ,  Raija H. Matero ,  Eva Tois ,  Antti Niskanen ,  Marko Tuominen ,  Hannu Huotari ,  Viljami J. Pore

IPC: C23C16/04 ,  C23C16/02 ,  C23C16/06 ,  C23C16/40 ,  C23C16/30 ,  C23C16/455 ,  C23C16/56 ,  H01L21/285 ,  H01L21/768 ,  C23C16/18 ,  C23C16/22

Abstract: Methods are provided for dual selective deposition of a first material on a first surface of a substrate and a second material on a second, different surface of the same substrate. The selectively deposited materials may be, for example, metal, metal oxide, or dielectric materials.

公开(公告)号：US11107673B2

公开(公告)日：2021-08-31

申请号：US16576328

申请日：2019-09-19

Applicant: ASM IP Holding B.V.

Inventor： Toshiya Suzuki ,  Viljami J. Pore

IPC: H01L21/02 ,  H01L21/033 ,  H01L21/311

Abstract: Methods for depositing silicon oxycarbonitride (SiOCN) thin films on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor and a second reactant that does not include oxygen. In some embodiments the methods allow for the deposition of SiOCN films having improved acid-based wet etch resistance.

公开(公告)号：US20210118669A1

公开(公告)日：2021-04-22

申请号：US17113383

申请日：2020-12-07

Applicant: ASM IP HOLDING B.V.

Inventor： Eva E. Tois ,  Viljami J. Pore

IPC: H01L21/02 ,  C23C16/455 ,  H01L21/3105 ,  C23C16/40

Abstract: Methods and systems for selectively depositing dielectric films on a first surface of a substrate relative to a passivation layer previously deposited on a second surface are provided. The methods can include at least one cyclical deposition process used to deposit material on the first surface while the passivation layer is removed, thereby preventing deposition over the passivation layer.

公开(公告)号：US20210001373A1

公开(公告)日：2021-01-07

申请号：US17022622

申请日：2020-09-16

Applicant: ASM IP HOLDING B.V.

Inventor： Viljami J. Pore ,  Marko Tuominen ,  Hannu Huotari

IPC: B05D1/00 ,  H01L21/02 ,  C23C16/30 ,  B05D1/36 ,  C23C16/455 ,  H01L21/67

Abstract: Methods and apparatus for vapor deposition of an organic film are configured to vaporize an organic reactant at a first temperature, transport the vapor to a reaction chamber housing a substrate, and maintain the substrate at a lower temperature than the vaporization temperature. Alternating contact of the substrate with the organic reactant and a second reactant in a sequential deposition sequence can result in bottom-up filling of voids and trenches with organic film in a manner otherwise difficult to achieve. Deposition reactors conducive to depositing organic films are provided.

公开(公告)号：US20200075322A1

公开(公告)日：2020-03-05

申请号：US16576328

申请日：2019-09-19

Applicant: ASM IP Holding B.V.

Inventor： Toshiya Suzuki ,  Viljami J. Pore

IPC: H01L21/02 ,  H01L21/033

Abstract: Methods for depositing silicon oxycarbonitride (SiOCN) thin films on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor and a second reactant that does not include oxygen. In some embodiments the methods allow for the deposition of SiOCN films having improved acid-based wet etch resistance.