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公开(公告)号:GB2115568B
公开(公告)日:1985-06-05
申请号:GB8232723
申请日:1982-11-16
Applicant: CANON KK
Inventor: KANBE JUNICHIRO , SHIRAI SHIGERU , OGAWA KYOSUKE , SAITOH KEISHI , OSATO YOICHI
Abstract: A photoconductive layer comprises a support and an amorphous layer. The amorphous layer is photoconductive, comprises silicon as matrix and hydrogen and/or halogen, and has a layer region containing group III atoms which is distributed such that the distribution is continuous in the direction of layer thickness and said atoms are more enriched on the aforesaid support side than on the opposite side to the aforesaid support side in said layer.
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公开(公告)号:DE3305091A1
公开(公告)日:1983-08-18
申请号:DE3305091
申请日:1983-02-14
Applicant: CANON KK
Inventor: OGAWA KYOSUKE , SHIRAI SHIGERU , KANBE JUNICHIRO , SAITOH KEISHI , OSATO YOICHI , MISUMI TERUO
Abstract: A photoconductive member comprises a support for a photoconductive member, an interface layer comprising an amorphous material containing silicon atoms and nitrogen atoms as constituent atoms, a rectifying layer comprising an amorphous material containing atoms (A) belonging to the group III or the group V of the periodic table as constituent atoms in a matrix of silicon atoms, a first amorphous layer exhibiting photoconductivity and comprising an amorphous material containing at least one member selected from the group consisting of hydrogen atoms and halogen atoms as constituent atoms in a matrix of silicon atoms, and a second amorphous layer containing an amorphous material represented by any of the formulas: SiaC1-a (0.4
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公开(公告)号:DE3303266A1
公开(公告)日:1983-08-11
申请号:DE3303266
申请日:1983-02-01
Applicant: CANON KK
Inventor: OGAWA KYOSUKE , SHIRAI SHIGERU , KANBE JUNICHIRO , SAITOH KEISHI , OSATO YOICHI , MISUMI TERUO
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公开(公告)号:DE3303700A1
公开(公告)日:1983-08-04
申请号:DE3303700
申请日:1983-02-03
Applicant: CANON KK
Inventor: OGAWA KYOSUKE , SHIRAI SHIGERU , KANBE JUNICHIRO , SAITOH KEISHI , OSATO YOICHI , MISUMI TERUO
Abstract: A photoconductive device comprises a substrate for the photoconductive element, an interface layer made of an amorphous material containing at least silicon atoms and nitrogen atoms as atoms involved in the structure, a rectifier layer made of an amorphous material, containing atoms (A) belonging to Group III or to Group V of the Periodic System as atoms involved in the structure in a matrix of silicon atoms and an amorphous layer which exhibits photoconductivity and is made of an amorphous material which contains at least one representative of hydrogen atoms or halogen atoms as atoms involved in the structure in a matrix of silicon atoms. The rectifier layer has a layer thickness (t) of 3 nm to less than 0.3 nm and the content C(A) of the atoms contained in the rectifier layer is 30 atomic ppm or more or the thickness (t) is 3 nm or more and the content C(A) is from 30 atomic ppm to less than 100 atomic ppm.
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公开(公告)号:GB2111707A
公开(公告)日:1983-07-06
申请号:GB8233456
申请日:1982-11-24
Applicant: CANON KK
Inventor: OGAWA KYOSUKI , SHIRAI SHIGERU , KANBE JUNICHIRO , SAITOH KEISHI , OSATO YOICHI
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公开(公告)号:GB2111704A
公开(公告)日:1983-07-06
申请号:GB8231137
申请日:1982-11-01
Applicant: CANON KK
Inventor: KANBE JUNICHIRO , SHIRAI SHIGERU , MISUMI TERUO , SAITOH KEISHI , OSATO YOICHI
Abstract: A photoconductive member comprising a support and a silicon amorphous layer, and the silicon amorphous layer has a first layer region containing at least one of oxygen, nitrogen and carbon and a second layer region containing an element of Group III. The first layer exists internally within the amorphous layer below its surface.
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公开(公告)号:DE3242611A1
公开(公告)日:1983-05-26
申请号:DE3242611
申请日:1982-11-18
Applicant: CANON KK
Inventor: KANBE JUNICHIRO , SHIRAI SHIGERU , OGAWA KYOSUKE , SAITOH KEISHI , OSATO YOICHI
Abstract: A photoconductive layer comprises a support and an amorphous layer. The amorphous layer is photoconductive, comprises silicon as matrix and hydrogen and/or halogen, and has a layer region containing group III atoms which is distributed such that the distribution is continuous in the direction of layer thickness and said atoms are more enriched on the aforesaid support side than on the opposite side to the aforesaid support side in said layer.
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公开(公告)号:DE3241351A1
公开(公告)日:1983-05-19
申请号:DE3241351
申请日:1982-11-09
Applicant: CANON KK
Inventor: KANBE JUNICHIRO , SHIRAI SHIGERU , MISUMI TERUO , SAITOH KEISHI , OSATO YOICHI
Abstract: A photoconductive member comprising a support and a silicon amorphous layer, and the silicon amorphous layer has a first layer region containing at least one of oxygen, nitrogen and carbon and a second layer region containing an element of Group III. The first layer exists internally within the amorphous layer below its surface.
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公开(公告)号:DE3752348D1
公开(公告)日:2002-04-04
申请号:DE3752348
申请日:1987-07-08
Applicant: CANON KK
Inventor: OSATO YOICHI , KAWADE HISAAKI , FUJII EIICHI , KASAMA NOBUHIRO , KOBAYASHI TADASHI
IPC: G11B11/10
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公开(公告)号:CA2128964C
公开(公告)日:1998-11-10
申请号:CA2128964
申请日:1994-07-27
Applicant: CANON KK
Inventor: OSATO YOICHI , MIYATA KATSUMI
IPC: G11B11/105 , G11B7/24
Abstract: A magnetooptical recording medium is constituted by laminating at least a first magnetic layer and a second magnetic layer in an order named on a substrate which has transparency and on which receiving a laser beam is incident. The coercive force of the second magnetic layer is greater than that of the first magnetic layer. The coercive force of the second magnetic layer is greater than o~/2M~2h2, where ~w is a magnetic wall energy between the first and second magnetic layers, M~2 is a saturation magnetization of the second magnetic layer, and h2 is a film thickness of the second magnetic layer. The coercive force of the first magnetic layer is grater than ~w/2M~1h1, where M~w is a saturation magnetization of the first magnetic layer, and h1 is a film thickness of the first magnetic layer. The compensation temperature of the first magnetic layer is smaller than the Curie temperature of the first magnetic layer. A method of recording information on the magnetoopical recording medium is effected as follows. A direction of a magnetic moment of the first magnetic layer is aligned in one direction by applying an external magnetic field thereto. A laser spot with low power is irradiated to the medium while applying a recording bias magnetic field in the same direction as the direction of the external magnetic field so as to form a first recording bit in a high temperature region in the laser spot. A laser spot with high power is irradiated to the medium while applying the recording bias magnetic field so as to form a second recording bit in which a magnetic wall is present between the first and second magnetic layers, in the high-temperature region in the laser spot. One of the first bit forming recording and the second bit forming recording is selectively determined in correspondence with information.
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