公开(公告)号：CA2585190A1

公开(公告)日：2006-05-18

申请号：CA2585190

申请日：2005-11-09

Applicant: TOKYO INST TECH ,  CANON KK

Inventor： NOMURA KENJI ,  KAMIYA TOSHIO ,  SANO MASAFUMI ,  NAKAGAWA KATSUMI ,  HOSONO HIDEO

IPC: H01L29/786 ,  H01L21/363 ,  H01L21/428

Abstract: A novel amorphous oxide film applicable, for example, to an active layer of a TFT is provided. The amorphous oxide film has an electron carrier concentration of less than 10 18 /cm 3 at a temperature of 25° C, wherein the amorphous oxide is any one selected from the group consisting of an oxide containing In, Zn, and Sn; an oxide containing In and Zn; an oxide containing In and Sn; and an oxide containing In, Zn, and Ga. The oxide comprises one type of element or a plurality of elements selected from the group consisting of Li, Na, Mn, Ni, Pd, Cu, Cd, C, N, and P; or at least one element selected from the group consisting of Ti, Ru, and F.

公开(公告)号：AU2004201944A1

公开(公告)日：2004-11-25

申请号：AU2004201944

申请日：2004-05-07

Applicant: CANON KK

Inventor： SANO MASAFUMI ,  KONDO TAKAHARU ,  NAKAMURA TETSURO ,  TSUZUKI HIDETOSHI ,  HIGASHIKAWA MAKOTO ,  TAKAI YASUYOSHI

IPC: H01L31/04 ,  H01L31/00 ,  H01L31/0224 ,  H01L31/036 ,  H01L31/0368 ,  H01L31/042 ,  H01L31/06 ,  H01L31/072 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/075 ,  H01L31/076 ,  H01L31/077 ,  H01L31/18 ,  H01L31/20

Abstract: The present invention provides a photovoltaic element including a structure with a first pin-junction having an i-type semiconductor layer made of amorphous silicon and a second pin-junction having an i-type semiconductor layer containing crystalline silicon which are arranged in series on a substrate, wherein the first pin-junction has a first intermediate layer at a p/i interface and a second intermediate layer at an n/i interface, and the second pin-junction has a third intermediate layer at a p/i interface and a fourth intermediate layer at an n/i interface, and wherein the second intermediate layer and the third intermediate layer are made of amorphous silicon and the first intermediate layer and the fourth intermediate layer contain crystalline silicon, or wherein the second intermediate layer and the third intermediate layer contain crystalline silicon and the first intermediate layer and the fourth intermediate layer are made of amorphous silicon.

公开(公告)号：DE69814751D1

公开(公告)日：2003-06-26

申请号：DE69814751

申请日：1998-07-24

Applicant: CANON KK

Inventor： SANO MASAFUMI

IPC: C25D9/04 ,  B05D1/36 ,  C25D9/08 ,  H01B5/14 ,  H01L21/00 ,  H01L21/44 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0376 ,  H01L31/0392 ,  H01L31/04 ,  H01L31/18

Abstract: A photovoltaic device is provided which comprises a back reflection layer, a zinc oxide layer and a semiconductor layer stacked in this order on a substrate, wherein the zinc oxide layer contains a carbohydrate. The content of the carbohydrate is preferably in the range of from 1 mu g/cm to 100 mg/cm . Thereby, the zinc oxide layer can be formed without abnormal growth to have a rough surface to achieve sufficient optical confinement effect, and the photovoltaic device is improved in the durability and the photoelectric conversion efficiency.

公开(公告)号：DE69330990T2

公开(公告)日：2002-04-04

申请号：DE69330990

申请日：1993-11-11

Applicant: CANON KK

Inventor： SAITO KEISHI ,  AOIKE TATSUYUKI ,  SANO MASAFUMI ,  NIWA MITSUYUKI ,  HAYASHI RYO ,  TONOGAKI MASAHIKO

IPC: H01L31/04 ,  H01L31/052 ,  H01L31/065 ,  H01L31/075 ,  H01L31/20

Abstract: An object of the present invention is to provide a photoelectrical conversion device in which re-combination of carriers excited by light is prevented and the open voltage and the carrier range of positive holes are improved and to provide a generating system using the photoelectrical conversion device. The photoelectrical conversion device includes a p-layer, an i-layer, and an n-layer, wherein the photoelectrical conversion device being formed by stacking the p-layer, the i-layer and the n-layer each of which is made of non-single-crystal silicon semiconductor, the i-layer contains germanium atoms, the band gap of the i-layer is smoothly changed in a direction of the thickness of the i-layer, the minimum value of the band gap is positioned adjacent to the p-layer from the central position of the i-layer and both of a valence control agent to serve as a donor and another valence control agent to serve as an acceptor are doped into the i-layer. Further, at least either of the p-layer or the n-layer is formed into a stacked structure consisting of a layer mainly composed of group III elements of the periodic table and/or group V elements of the same and a layer containing the valence control agent and mainly composed of silicon atoms.

公开(公告)号：ES2164816T3

公开(公告)日：2002-03-01

申请号：ES96115386

申请日：1996-09-25

Applicant: CANON KK

Inventor： SANO MASAFUMI ,  SAITO KEISHI

IPC: H01L31/052 ,  H01L31/18 ,  H01L31/20

Abstract: A method for producing a photovoltaic device comprises a base member (190) comprising a substrate (100) and a superposingly formed thereon a reflecting layer (101) and a reflection enhancing layer (102), and a pin structure formed of an n-type (103), i-type (104) and p-type (105) semiconductor layers containing silicon atoms and being non-single crystal as crystal structure, the pin structure being repeated at least once on said base member. The method comprises the steps of (a) depositing a material constituting the reflecting layer, at a substrate temperature of from 200 to 500 DEG C to form the reflecting layer; (b) lowering after the step (a) the substrate temperature to 100 DEG C or below; and (c) depositing after the step (b) a material constituting the reflection enhancing layer, on the reflecting layer at a substrate temperature of from 200 to 400 DEG C to form the reflection enhancing layer.

公开(公告)号：AU7842798A

公开(公告)日：1999-02-04

申请号：AU7842798

申请日：1998-07-24

Applicant: CANON KK

Inventor： SANO MASAFUMI

IPC: C25D9/04 ,  B05D1/36 ,  C25D9/08 ,  H01B5/14 ,  H01L21/00 ,  H01L21/44 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0376 ,  H01L31/0392 ,  H01L31/04 ,  H01L31/18

Abstract: A photovoltaic device is provided which comprises a back reflection layer, a zinc oxide layer and a semiconductor layer stacked in this order on a substrate, wherein the zinc oxide layer contains a carbohydrate. The content of the carbohydrate is preferably in the range of from 1 mu g/cm to 100 mg/cm . Thereby, the zinc oxide layer can be formed without abnormal growth to have a rough surface to achieve sufficient optical confinement effect, and the photovoltaic device is improved in the durability and the photoelectric conversion efficiency.

公开(公告)号：AU656067B2

公开(公告)日：1995-01-19

申请号：AU3690293

申请日：1993-04-14

Applicant: CANON KK

Inventor： MATSUDA KOICHI ,  SANO MASAFUMI ,  MURAKAMI TSUTOMU

IPC: H01L31/04 ,  H01L31/0376 ,  H01L31/065 ,  H01L31/075 ,  H01L31/076 ,  H01L31/042

Abstract: A pin junction photovoltaic device comprising a substrate and a pin junction semiconductor active layer region disposed on said substrate, said pin junction semiconductor active layer region comprising a p-type semiconductor layer (105) composed of a p-type non-single crystalline semiconductor material, an i-type semiconductor layer composed of an i-type non-single crystalline semiconductor material, and an n-type semiconductor layer (103) composed of an n-type non-single crystalline semiconductor material, characterized in that (a) a buffer layer (118) comprising a non-single crystalline silicon semiconductor material substantially not containing germanium atoms is interposed between said p-type semiconductor layer and said i-type semiconductor layer, (b) a buffer layer (117) comprising a non-single crystalline silicon semiconductor material substantially not containing germanium atoms is interposed between said i-type semiconductor layer and said n-type semiconductor layer, and said i-type semiconductor layer is formed of an amorphous silicon germanium semiconductor material containing the germanium atoms in an amount of 20 to 70 atomic % in the entire region in which the concentration distribution of the germanium atoms in the thickness direction is varied while providing a maximum concentration point.

公开(公告)号：AU5068293A

公开(公告)日：1994-05-26

申请号：AU5068293

申请日：1993-11-12

Applicant: CANON KK

Inventor： SAITO KEISHI ,  AOIKE TATSUYUKI ,  SANO MASAFUMI ,  NIWA MITSUYUKI ,  HAYASHI RYO ,  TONOGAKI MASAHIKO

IPC: H01L31/04 ,  H01L31/052 ,  H01L31/065 ,  H01L31/075 ,  H01L31/20 ,  H01L31/0328

Abstract: An object of the present invention is to provide a photoelectrical conversion device in which re-combination of carriers excited by light is prevented and the open voltage and the carrier range of positive holes are improved and to provide a generating system using the photoelectrical conversion device. The photoelectrical conversion device includes a p-layer, an i-layer, and an n-layer, wherein the photoelectrical conversion device being formed by stacking the p-layer, the i-layer and the n-layer each of which is made of non-single-crystal silicon semiconductor, the i-layer contains germanium atoms, the band gap of the i-layer is smoothly changed in a direction of the thickness of the i-layer, the minimum value of the band gap is positioned adjacent to the p-layer from the central position of the i-layer and both of a valence control agent to serve as a donor and another valence control agent to serve as an acceptor are doped into the i-layer. Further, at least either of the p-layer or the n-layer is formed into a stacked structure consisting of a layer mainly composed of group III elements of the periodic table and/or group V elements of the same and a layer containing the valence control agent and mainly composed of silicon atoms.

公开(公告)号：CA2102948A1

公开(公告)日：1994-05-17

申请号：CA2102948

申请日：1993-11-12

Applicant: CANON KK

Inventor： SAITO KEISHI ,  AOKIE TATSUYUKI ,  SANO MASAFUMI ,  NIWA MITSUYUKI ,  HAYASHI RYO ,  TONOGAKI MASAHIKO

IPC: H01L31/0392 ,  H01L31/052 ,  H01L31/065 ,  H01L31/075 ,  H01L31/18 ,  H01L31/20

Abstract: The present invention is directed to provide a photovoltaic element in which the open-circuit voltage and the carrier range of holes are improved by preventing the recombination of photoexcited carriers. The photovoltaic element composed of a p-type layer, an i-type layer of a lamination structure consisting of an i-type layer by RFPCVD on the p-type layer side and an i-type layer by microwave ( mu W) PCVD on the n-type layer side, or an i-type layer by microwave ( mu W) PCVD on the p-type layer side and an i-type layer by RFPCVD on the n-type layer side, characterized in that the i-type layer by mu WPCVD is one formed by a mu WPCVD in which a lower mu W energy and a higher RF energy than mu W energy to decompose source gas at 100% are simultaneously applied to a source gas containing Si and Ge at a pressure of 50mTorr or less, such that the minimum values of bandgap is biased toward the p-type layer side off the center of the i-type layer, and the i-type layer by RFPCVD is one formed 30nm thick or less by a RFPCVD using a source gas containing a silicon containing gas at a deposition rate of 2nm/sec or less.

公开(公告)号：AU3690293A

公开(公告)日：1993-10-21

申请号：AU3690293

申请日：1993-04-14

Applicant: CANON KK

Inventor： MATSUDA KOICHI ,  SANO MASAFUMI ,  MURAKAMI TSUTOMU

IPC: H01L31/04 ,  H01L31/0376 ,  H01L31/065 ,  H01L31/075 ,  H01L31/076 ,  H01L31/042

Abstract: A pin junction photovoltaic device comprising a substrate and a pin junction semiconductor active layer region disposed on said substrate, said pin junction semiconductor active layer region comprising a p-type semiconductor layer (105) composed of a p-type non-single crystalline semiconductor material, an i-type semiconductor layer composed of an i-type non-single crystalline semiconductor material, and an n-type semiconductor layer (103) composed of an n-type non-single crystalline semiconductor material, characterized in that (a) a buffer layer (118) comprising a non-single crystalline silicon semiconductor material substantially not containing germanium atoms is interposed between said p-type semiconductor layer and said i-type semiconductor layer, (b) a buffer layer (117) comprising a non-single crystalline silicon semiconductor material substantially not containing germanium atoms is interposed between said i-type semiconductor layer and said n-type semiconductor layer, and said i-type semiconductor layer is formed of an amorphous silicon germanium semiconductor material containing the germanium atoms in an amount of 20 to 70 atomic % in the entire region in which the concentration distribution of the germanium atoms in the thickness direction is varied while providing a maximum concentration point.