公开(公告)号：US11721719B2

公开(公告)日：2023-08-08

申请号：US17074891

申请日：2020-10-20

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Vibhor Jain ,  Anthony K. Stamper ,  John J. Ellis-Monaghan ,  Steven M. Shank ,  Rajendran Krishnasamy

IPC: H01L29/06 ,  H01L29/08 ,  H01L29/66 ,  H01L29/737 ,  H01L21/763 ,  H01L29/165

CPC classification number: H01L29/0642 ,  H01L21/763 ,  H01L29/0826 ,  H01L29/165 ,  H01L29/66242 ,  H01L29/7371

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to heterojunction bipolar transistors (HBTs) with a buried trap rich region and methods of manufacture. The structure includes: a trap rich isolation region embedded within the bulk substrate; and a heterojunction bipolar transistor above the trap rich isolation region, with its sub-collector region separated by the trap rich isolation region by a layer of the bulk substrate.

公开(公告)号：US11664470B2

公开(公告)日：2023-05-30

申请号：US17863922

申请日：2022-07-13

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Rajendran Krishnasamy ,  Steven M. Shank ,  John J. Ellis-Monaghan ,  Ramsey Hazbun

IPC: H01L31/0352 ,  H01L31/0232 ,  H01L31/18 ,  H01L31/103 ,  H01L31/028

CPC classification number: H01L31/035281 ,  H01L31/028 ,  H01L31/02327 ,  H01L31/103 ,  H01L31/1808

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a photodiode with an integrated, light focusing elements and methods of manufacture. The structure includes: a trench photodiode comprising a domed structure; and a doped material on the domed structure, the doped material having a concave underside surface.

公开(公告)号：US11437522B2

公开(公告)日：2022-09-06

申请号：US16890063

申请日：2020-06-02

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Michel J. Abou-Khalil ,  Steven M. Shank ,  Mark Levy ,  Rajendran Krishnasamy ,  John J. Ellis-Monaghan ,  Anthony K. Stamper

IPC: H01L29/786 ,  H01L21/763 ,  H01L29/06 ,  H01L29/423

Abstract: Structures for a field-effect transistor and methods of forming a structure for a field-effect transistor. A shallow trench isolation region is formed in a semiconductor substrate. A trench is formed in the shallow trench isolation region, and a body region is formed in the trench of the shallow trench isolation region. The body region is comprised of a polycrystalline semiconductor material.