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公开(公告)号：US10985244B2
公开(公告)日：2021-04-20
申请号：US16451797
申请日：2019-06-25
Applicant: GLOBALFOUNDRIES U.S. INC.
Inventor： Shesh Mani Pandey , Chung Foong Tan , Baofu Zhu
IPC: H01L29/06 , H01L21/762 , H01L27/12
Abstract: The present disclosure relates to semiconductor structures and, more particularly, to n-well resistors and methods of manufacture. The structure includes: a substrate composed of a N-well implant region and a deep N-well implant region; and a plurality of shallow trench isolation regions extending into both the N-well implant region and a deep N-well implant region.
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