Abstract:
A semiconductor chip package is disclosed. The package includes a carrier, a plurality of semiconductor chips disposed on the carrier, a first encapsulation layer disposed above the semiconductor chips. A metallization layer is disposed above the first encapsulation layer, the metallization layer including a plurality of first metallic areas forming electrical connections between selected ones of the semiconductor chips. A second encapsulation layer is disposed above the solder resist layer. A plurality of external connectors are provided, each one of the external connectors being connected with one of the first metallic areas and extending outwardly through a surface of the second encapsulation layer.
Abstract:
An interconnect module includes a metal clip having a first end section, a second end section and a middle section extending between the first and the second end sections. The first end section is configured for external attachment to a bare semiconductor die or packaged semiconductor die attached to a carrier or to a metal region of the carrier. The second end section is configured for external attachment to a different metal region of the carrier or to a different semiconductor die or packaged semiconductor die attached to the carrier. The module further includes a magnetic field sensor secured to the metal clip. The magnetic field sensor is operable to sense a magnetic field produced by current flowing through the metal clip. The interconnect module can be used to form a direct electrical connection between components and/or metal regions of a carrier to which the module is attached.