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公开(公告)号：JP2002298728A
公开(公告)日：2002-10-11
申请号：JP2001096904
申请日：2001-03-29
Inventor： AIZAWA KOICHI , KOMODA TAKUYA , IWATA YASUTSUGU
Abstract: PROBLEM TO BE SOLVED: To provide a field emission type electron source and its manufacturing method whereby it is possible to establish a large emission current, a high electron emitting efficiency, and a less spread of the energy distribution of emitted electrons. SOLUTION: The field emission type electron source includes an electroconductive base board of such a structure that a conductor layer 12 is provided on one surface of an insulated board 11 made of glass. A strong electric field drift layer 6 whereon electrons drift is formed on one surface of the insulated board 11 while a surface electrode 7 is formed on the strong electric field drift layer 6. The drift layer 6 is formed from a number of clusters 60 consisting of silicon micro-crystals 63 in which distribution of crystalline grain sizes of nano-order is restricted to a certain specified range and oxygen atoms 81 as barrier atoms having a greater band gap than the silicon micro- crystals 63 and is considered to be arranged as tied together continuously in such a form that oxygen atom 81 is interposed between adjoining silicon micro- crystals 63.
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公开(公告)号：JP2002008520A
公开(公告)日：2002-01-11
申请号：JP2000191978
申请日：2000-06-27
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： WATABE YOSHIFUMI , AIZAWA KOICHI , KOMODA TAKUYA , HONDA YOSHIAKI , HATAI TAKASHI , KUNUGIBARA TSUTOMU , KONDO YUKIHIRO
Abstract: PROBLEM TO BE SOLVED: To provide a field radiation type electron source in which the fluctuation of electron emitting direction is smaller than the conventional method and its manufacturing method. SOLUTION: An intense-field drift layer 6 having a porous polycrystalline silicon layer is formed on the conductive substrate 100 and a conductive film 7 is provided on the intense-field drift layer 6. The drift section 6a of the intense-field drift layer 6 is formed by smoothing the surface of a polycrystalline silicon layer 3 and then by making porous by anodizing and further by oxidizing by a rapid thermal oxidization technology.
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公开(公告)号：JP2001319787A
公开(公告)日：2001-11-16
申请号：JP2000139154
申请日：2000-05-11
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： AIZAWA KOICHI , KOMODA TAKUYA , KOSHIDA NOBUYOSHI
Abstract: PROBLEM TO BE SOLVED: To provide a new solid light emission device with a little cross talk which can prevent decrease of aperture rate of pixels. SOLUTION: On one surface of a substrate 1, a row of plural rear face electrodes 4 is installed, and a strong electric field drift layer 6 is formed so as to cover the plural rear face electrodes 4, a luminous layer 2 is laminated on the strong electric field drift layer 6, and a row of plural transparent electrodes 3 is installed on the luminous layer 2 in a crossing direction to the rear face electrodes 4. The strong electric field drift layer 6 has also a function to supply electrons to the luminous layer 2 in order to illuminate the luminous layer 2 by the drift of the electrons injected from the rear face electrodes 4 when a voltage is applied between the transparent electrodes 3 and the rear face electrodes 4 taking the transparent electrodes 3 as positive electrodes. As for the strong electric field drift layer 6, the region almost overlapped with the rear face electrodes 4 is composed of a porous semiconductor layer 6a of an oxidized porous polycrystal silicon layer, and the rest of the region is composed of a semiconductor layer 6b of a polycrystal silicon layer.
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公开(公告)号：JP2001223279A
公开(公告)日：2001-08-17
申请号：JP2000031241
申请日：2000-02-08
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： KUNUGIBARA TSUTOMU , KOMODA TAKUYA , AIZAWA KOICHI , HONDA YOSHIAKI
IPC: G11C16/02 , G11C11/23 , H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
Abstract: PROBLEM TO BE SOLVED: To provide a device for writing a memory capable of implanting electrons in the memory having a charge storage part of a nanometer size in a highly positional accuracy. SOLUTION: An electron source 10 for writing information by implanting electrons is provided in the memory having the charge storage part of the nanometer size. The source 10 has a plurality of implanting electrodes 8a arranged in a stripe state, a plurality of surface electrodes 7 arranged in a stripe state in a direction perpendicular to the electrodes 8a, and a drift part provided between the electrodes 8a and the electrodes 7 and having a porous region. When a voltage is applied between the electrodes 8a and the electrodes 7 in the source 10, the electrons implanted from the electrodes 8a by an electric field operated at the drift part 6a are drifted and discharged through the electrodes 7. The electrons are selectively implanted in the storage part of a desired position of the memory by selecting a combination of the electrodes 8a and the electrodes 7.
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公开(公告)号：JP2001118500A
公开(公告)日：2001-04-27
申请号：JP29594999
申请日：1999-10-18
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： HATAI TAKASHI , KOMODA TAKUYA , AIZAWA KOICHI
Abstract: PROBLEM TO BE SOLVED: To provide a method for fabricating an electric field radiation electron source with improved withstand voltage and electron emission efficiency. SOLUTION: A strong electric field drift layer 6 made of an oxidized porous polycrystalline silicon layer is deposited on the main surface of a conductive n-type silicon substrate 1, having a surface electrode 7 formed thereon. An ohmic electrode 2 is formed in the inside of the n-type silicon substrate 1. The drift layer 6 is obtained by oxidizing the porous polycrystalline silicon layer 4 formed by oxidizing the polycrystalline silicon layer 3 with the anode. A lamp annealing apparatus is used for the oxidizing process, maintained under a vacuum during the period of temperature rise from room temperature to oxidation temperature, for example, 900 deg.C, at which temperature the furnace is charged with oxygen to initiate oxidation process.
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Patent Agency Ranking
公开(公告)号：JP2001118489A
公开(公告)日：2001-04-27
申请号：JP29595199
申请日：1999-10-18
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： HATAI TAKASHI , KOMODA TAKUYA , AIZAWA KOICHI
Abstract: PROBLEM TO BE SOLVED: To provide an electric field radiation electron source and method of fabricating it that enhances the electron emission effect with high withstand voltage. SOLUTION: An electric field drift layer 6 is formed on the main surface of an n-type silicon substrate 1, having a surface electrode 7. An ohmic electrode 2 is formed in the inside of the silicon substrate 1. The strong electric field drift layer 6 is obtained by annealing a porous polycrystalline silicon layer formed by anode oxidizing process in an atmosphere of N2O or NO gas at 900 deg.C for an hour. The polycrystalline layer thus obtained has high electron emission efficiency, low defect density, and high withstand voltage compared to the conventional silicon layer.
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公开(公告)号：JP2001093406A
公开(公告)日：2001-04-06
申请号：JP27152499
申请日：1999-09-27
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： HONDA YOSHIAKI , AIZAWA KOICHI , KOMODA TAKUYA , WATABE YOSHIFUMI , HATAI TAKASHI , KUNUGIBARA TSUTOMU , KONDO YUKIHIRO
Abstract: PROBLEM TO BE SOLVED: To provide a field emission type electron source whose surface is improved in flatness and to provide a manufacturing method of the electric field emission type electron source. SOLUTION: In a field emission type electron source 10, a strong electric field drift region 6 made of oxidized porous polycrystalline silicon and a conductive region 8 made of n-type polycrystalline silicon are spaced away from each other and placed in parallel with each other in a plane of an undoped polycrystalline silicon layer 3 as a semiconductor layer that is formed on one surface of an insulation board 11 of a glass board. Insulation layers 13 made of oxidized silicon films are formed in a stripe manner such that they cover surfaces of the polycrystalline silicon layer 3, an insulation separation region 9, and a conductive region 8 respectively. A conductive thin film 7 is formed over the strong electric field drift region 6 and the insulation layer 13. Pad electrodes 18 are placed on specified parts of the conductive region 8, and pad electrodes 17 are placed on specified parts of the conductive thin film 7.
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公开(公告)号：JP2001087554A
公开(公告)日：2001-04-03
申请号：JP27152899
申请日：1999-09-27
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： WATABE YOSHIFUMI , KONDO YUKIHIRO , AIZAWA KOICHI , KOMODA TAKUYA , HONDA YOSHIAKI , HATAI TAKASHI , KUNUGIBARA TSUTOMU
Abstract: PROBLEM TO BE SOLVED: To provide a television game machine capable of reducing the weight and saving the space. SOLUTION: This television game machine is provided with an image display unit 100 formed of a flat display panel assembled in a game machine main body 90, a game operating operation unit 103 provided on a table part 90a of the game machine main body 90, and a control unit 101 having a function as a driver for driving the image display unit 100 and for displaying the game image in the image display unit 100 on the basis of the operation information from the operation unit 103. The image display unit 100 is provided with a face plate 30 made of glass, a rear plate 20 arranged opposite to the face plate 30, and a field emission type electron source 10 arranged in the rear plate 20 at an opposite side to the face plate 30, and a frame-like support spacer 40 is arranged between both the plates 30, 20.
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公开(公告)号：JP2001061564A
公开(公告)日：2001-03-13
申请号：JP23906799
申请日：1999-08-26
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： ICHIHARA TSUTOMU , KOMODA TAKUYA , AIZAWA KOICHI , KONDO YUKIHIRO , HONDA YOSHIAKI , WATABE YOSHIFUMI , HATAI TAKASHI
Abstract: PROBLEM TO BE SOLVED: To provide a table with a display having a wide viewing angle and capable of being lightweight and consuming little electric power. SOLUTION: This table Ta with an FED(Field Emission Display) is equipped with a table body 40 and an FED 42 incorporated into the top board 41 of the table body 40. The FED 42 has a wider viewing angle than liquid-crystal display and can be made to consume less electric power and made more lightweight than plasma displays, thus a plurality of persons can share information by using the table Ta with the FED as a table in, e.g. a conference room.
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公开(公告)号：JP2001035355A
公开(公告)日：2001-02-09
申请号：JP21145399
申请日：1999-07-27
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： ICHIHARA TSUTOMU , KOMODA TAKUYA , AIZAWA KOICHI
Abstract: PROBLEM TO BE SOLVED: To provide a field emission type electron source capable of easily increasing the area thereof and lowering the cost thereof. SOLUTION: One surface side of a conductive substrate 1 is formed with a strong field drift part 6 made of the porous amorphous silicon, and a surface electrode 7 formed of a conductive thin film is formed on the strong field drift part 6. In this field emission type electron source 1, electrons arriving at a surface of the strong field drift part 6 while applied with the electric field to the strong field drift part 6 are considered as hot electrons, and are emitted from the surface of the surface electrode 7 by the tunnel effect. As a conductive substrate 1, a glass substrate 1a which is low-cost such as a non-alkali glass formed with a conductive film 2 on one surface thereof is used. The strong field drift part 6 is formed by forming a porous layer in the amorphous silicon layer, deposited on the conductive substrate 1 by the plasma CVD method, and by oxidizing the porous amorphous silicone layer with acid.
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