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1.发明申请METHOD AND APPARATUS FOR MODIFYING OBJECT WITH ELECTRONS GENERATED FROM COLD CATHODE ELECTRON EMITTER 审中-公开用于从冷阴极电子发射器产生的电子修改对象的方法和装置
公开(公告)号：WO2005052978A2
公开(公告)日：2005-06-09
申请号：PCT/JP2004017969
申请日：2004-11-25
Applicant: MATSUSHITA ELECTRIC WORKS LTD , AIZAWA KOICHI , ICHIHARA TSUTOMU , KOMODA TAKUYA , IKEDA JYUNJI , BABA TORU
Inventor： AIZAWA KOICHI , ICHIHARA TSUTOMU , KOMODA TAKUYA , IKEDA JYUNJI , BABA TORU
Abstract: Apparatus and method for modifying an object with electrons are provided, by which the object can be uniformly and efficiently modified with the electrons under a pressure substantially equal to atmospheric pressure even when having a relatively wide surface area to be treated. This method uses a cold-cathode electron emitter having the capability of emitting electrons from a planar electron emitting portion according to tunnel effect, and preferably comprising a pair of electrodes, and a strong field drift layer including nanocrystalline silicon disposed between the electrodes. The object is exposed to electrons emitted from the planar electron emitting portion by applying a voltage between the electrodes. It is preferred that an energy of the emitted electrons is selected from a range of 1 eV to 50 keV, and preferably 1 eV to 100 eV.
Abstract translation: 提供了用电子修饰物体的装置和方法，通过该装置和方法，即使具有相对较宽的待处理表面积，物体也可以在基本上等于大气压的压力下用电子均匀有效地修改。 该方法使用具有根据隧道效应从平面电子发射部发射电子的能力的冷阴极电子发射体，并且优选地包括一对电极，以及包括设置在电极之间的纳米晶硅的强场漂移层。 该物体通过在电极之间施加电压而暴露于从平面电子发射部分发射的电子。 发射电子的能量优选从1eV至50keV，优选1eV至100eV的范围内选择。
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公开(公告)号：WO2004061891A3
公开(公告)日：2005-01-20
申请号：PCT/JP0316860
申请日：2003-12-26
Applicant: MATSUSHITA ELECTRIC WORKS LTD , ICHIHARA TSUTOMU , KOMODA TAKUYA , AIZAWA KOICHI , HONDA YOSHIAKI , BABA TORU
Inventor： ICHIHARA TSUTOMU , KOMODA TAKUYA , AIZAWA KOICHI , HONDA YOSHIAKI , BABA TORU
CPC classification number: H01J1/3042 , H01J31/123
Abstract: A field emission-type electron source has a plurality of electron source elements (10a) formed on the side of one surface (front surface) of an insulative substrate (11) composed of a glass substrate. Each of electron source elements (10a) includes a lower electrode (12), a buffer layer (14) composed of an amorphous silicon layer formed on the lower electrode (12), a polycrystalline silicon layer (3) formed on the buffer layer (14), a strong-field drift layer (6) formed on the polycrystalline silicon layer (3), and a surface electrode (7) formed on the strong-field drift layer (6). The field emission-type electron source can achieved reduced in-plain variation in electron emission characteristics.
Abstract translation: 场致发射型电子源具有形成在由玻璃基板构成的绝缘基板（11）的一个表面（前表面）侧的多个电子源元件（10a）。 每个电子源元件（10a）包括下电极（12），由形成在下电极（12）上的非晶硅层构成的缓冲层（14），形成在缓冲层（12）上的多晶硅层（3） 14），形成在多晶硅层（3）上的强场漂移层（6）和形成在强场漂移层（6）上的表面电极（7）。 场致发射型电子源可以实现电子发射特性的平滑变化。
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公开(公告)号：DE60229105D1
公开(公告)日：2008-11-13
申请号：DE60229105
申请日：2002-12-11
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： KOMODA TAKUYA , TAKEGAWA YOSHIYUKI , AIZAWA KOICHI , HATAI TAKASHI , ICHIHARA TSUTOMU , HONDA YOSHLAKI , WATABE YOSHIFUMI , BABA TORU
IPC: H01J1/312
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公开(公告)号：AT352858T
公开(公告)日：2007-02-15
申请号：AT99122729
申请日：1999-11-16
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： HATAI TAKASHI , KOMODA TAKUYA , HONDA YOSHIAKI , AIZAWA KOICHI , WATABE YOSHIFUMI , ICHIHARA TSUTOMU , KONDO YUKIHIRO , KOSHIDA NOBUYOSHI
Abstract: A field emission type electron source 10 is provided with an n-type silicon substrate 1, a strong field drift layer 6 formed on the n-type silicon substrate 1 directly or inserting a polycrystalline silicon layer 3 therebetween, and an electrically conductive thin film 7, which is a thin gold film, formed on the strong field drift layer 6. Further, an ohmic electrode 2 is provided on the back surface of the n-type silicon substrate 1. Hereupon, electrons, which are injected from the n-type silicon substrate 1 into the strong field drift layer 6, drift in the strong field drift layer 6 toward the surface of the layer, and then pass through the electrically conductive thin film 7 to be emitted outward. The strong field drift layer 6 is formed by making the polycrystalline silicon 3 formed on the n-type silicon substrate 1 porous by means of an anodic oxidation, and further oxidizing it using dilute nitric acid or the like.
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公开(公告)号：AU595735B2
公开(公告)日：1990-04-05
申请号：AU2676488
申请日：1988-12-09
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： TOMII KAZUSHI , ABE TOSHIROH , KOMODA TAKUYA
Abstract: A semiconductor device is formed with a high specific resistance zone between the anode and cathode zones on each side of the device, with a lattice defect zone in the anode zone in the vicinity of the high specific resistance zone. As a result, the turn-off time for the device can be sufficiently shortened, not only at normal temperatures, but at relatively high temperatures as well.
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Patent Agency Ranking
公开(公告)号：DE69934958D1
公开(公告)日：2007-03-15
申请号：DE69934958
申请日：1999-11-16
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： HATAI TAKASHI , KOMODA TAKUYA , HONDA YOSHIAKI , AIZAWA KOICHI , WATABE YOSHIFUMI , ICHIHARA TSUTOMU , KONDO YUKIHIRO , KOSHIDA NOBUYOSHI
Abstract: A field emission type electron source 10 is provided with an n-type silicon substrate 1, a strong field drift layer 6 formed on the n-type silicon substrate 1 directly or inserting a polycrystalline silicon layer 3 therebetween, and an electrically conductive thin film 7, which is a thin gold film, formed on the strong field drift layer 6. Further, an ohmic electrode 2 is provided on the back surface of the n-type silicon substrate 1. Hereupon, electrons, which are injected from the n-type silicon substrate 1 into the strong field drift layer 6, drift in the strong field drift layer 6 toward the surface of the layer, and then pass through the electrically conductive thin film 7 to be emitted outward. The strong field drift layer 6 is formed by making the polycrystalline silicon 3 formed on the n-type silicon substrate 1 porous by means of an anodic oxidation, and further oxidizing it using dilute nitric acid or the like.
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公开(公告)号：AT409951T
公开(公告)日：2008-10-15
申请号：AT02027754
申请日：2002-12-11
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： KOMODA TAKUYA , TAKEGAWA YOSHIYUKI , AIZAWA KOICHI , HATAI TAKASHI , ICHIHARA TSUTOMU , HONDA YOSHLAKI , WATABE YOSHIFUMI , BABA TORU
IPC: H01J1/312
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公开(公告)号：DE69914556T2
公开(公告)日：2004-12-23
申请号：DE69914556
申请日：1999-09-25
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： KOMODA TAKUYA , ICHIHARA TSUTOMU , AIZAWA KOICHI , KOSHIDA NOBUYOSHI
Abstract: There is provided a field emission electron source at a low cost in which electrons can be emitted with a high stability and a high efficiency and a method of producing the same. In the field emission electron source, a strong electric field drift part 106 is formed on the n-type silicon substrate on the principal surface thereof and a surface electrode 107 made of a gold thin film is formed on the strong electric field drift part 106. And the ohmic electrode 2 is formed on the back surface of the n-type silicon substrate 101. In this field emission electron source 110, when the surface electrode 107 is disposed in the vacuum and a DC voltage is applied to the surface electrode 107 which is of a positive polarity with respect to the n-type silicon substrate 101 (ohmic electrode 2), electrons injected from the n-type silicon substrate 101 are drifted in the strong electric field drift part 106 and emitted through the surface electrode 107. The strong electric field drift part 106 comprises a drift region 161 which has a cross section in the structure of mesh at right angles to the direction of thickness of the n-type silicon substrate 1, which is an electrically conductive substrate, and a heat radiation region 162 which is filled in the voids of the mesh and has a heat conduction higher than that of the drift region 161.
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公开(公告)号：DK0989577T3
公开(公告)日：2004-03-08
申请号：DK99118925
申请日：1999-09-25
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： KOMODA TAKUYA , ICHIHARA TSUTOMU , AIZAWA KOICHI , KOSHIDA NOBUYOSHI
Abstract: There is provided a field emission electron source at a low cost in which electrons can be emitted with a high stability and a high efficiency and a method of producing the same. In the field emission electron source, a strong electric field drift part 106 is formed on the n-type silicon substrate on the principal surface thereof and a surface electrode 107 made of a gold thin film is formed on the strong electric field drift part 106. And the ohmic electrode 2 is formed on the back surface of the n-type silicon substrate 101. In this field emission electron source 110, when the surface electrode 107 is disposed in the vacuum and a DC voltage is applied to the surface electrode 107 which is of a positive polarity with respect to the n-type silicon substrate 101 (ohmic electrode 2), electrons injected from the n-type silicon substrate 101 are drifted in the strong electric field drift part 106 and emitted through the surface electrode 107. The strong electric field drift part 106 comprises a drift region 161 which has a cross section in the structure of mesh at right angles to the direction of thickness of the n-type silicon substrate 1, which is an electrically conductive substrate, and a heat radiation region 162 which is filled in the voids of the mesh and has a heat conduction higher than that of the drift region 161.
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公开(公告)号：GB2213988B
公开(公告)日：1992-02-05
申请号：GB8828659
申请日：1988-12-08
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： TOMII KAZUSHI , ABE TOSHIROH , KOMODA TAKUYA
Abstract: A semiconductor device is formed with a high specific resistance zone between the anode and cathode zones on each side of the device, with a lattice defect zone in the anode zone in the vicinity of the high specific resistance zone. As a result, the turn-off time for the device can be sufficiently shortened, not only at normal temperatures, but at relatively high temperatures as well.
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